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Abstract: No abstract text available
Text: TOSHIBA TENTATIVE HN3C15FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC
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HN3C15FU
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Untitled
Abstract: No abstract text available
Text: HN3C15FU TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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HN3C15FU
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HN3C15FU
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE HN3C15FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C15FU
HN3C15FU
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HN3C15FU
Abstract: No abstract text available
Text: T O S H IB A TENTATIVE HN3C15FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C15FU Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)
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HN3C15FU
HN3C15FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C15FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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HN3C15FU
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HN3C15FU
Abstract: No abstract text available
Text: TO SH IBA HN3C15FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C15FU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 i 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)
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HN3C15FU
N3C15
HN3C15FU
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