HM5116400AS
Abstract: No abstract text available
Text: HB56A440BR Series 4,194,304-word x 40-bit High Density Dynamic RAM Module The HB56A440BR is a 4 M × 40 dynamic RAM module, mounted 10 pieces of 16-Mbit DRAM HM5116400AS sealed in SOJ package. An outline of the HB56A440BR is 72-pin single inline package. Therefore, the HB56A440BR makes
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HB56A440BR
304-word
40-bit
16-Mbit
HM5116400AS)
72-pin
HM5116400AS
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Untitled
Abstract: No abstract text available
Text: HM5116400AS7GS 1/2 IL08 * C-MOS 16M(4,194,304x4)-BIT DYNAMIC RAM - TOP VIEW - 1 V DD (+5V) GND 26 I/O1 I/O 2 25 I/O4 I/O I/O2 I/O 3 24 I/O3 I/O WE IN 4 23 CAS IN RAS IN 5 22 OE IN A11 IN 6 21 A9 IN 9 10 11 12 15 16 17 18 19 21 8 6 A0 A1 A2 A3 A4
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HM5116400AS7GS
304x4
A0-A11
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HM5116400AS
Abstract: D13IO
Text: HB56A840BR Series 8,388,608-word x 40-bit High Density Dynamic RAM Module The HB56A840BR is a 8 M × 40 dynamic RAM module, mounted 20 pieces of 16-Mbit DRAM HM5116400AS sealed in SOJ package. An outline of the HB56A840BR is 72-pin single inline package. Therefore, the HB56A840BR makes
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HB56A840BR
608-word
40-bit
16-Mbit
HM5116400AS)
72-pin
HM5116400AS
D13IO
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74ABT16244ADGG
Abstract: HB56A464EJ HM5116400AS
Text: ADE-203-219B Z HB56A464EJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module Rev. 2 Jul. 11, 1994 The HB56A464EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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ADE-203-219B
HB56A464EJ
304-word
64-bit
16-Mbit
HM5116400AS)
16-bit
74ABT16244ADGG)
74ABT16244ADGG
HM5116400AS
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74ABT16244ADGG
Abstract: HB56D473EJ HM5117400AS Hitachi DSA00514
Text: ADE-203-250 Z HB56D473EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module Preliminary Rev. 0 Apr. 20, 1994 The HB56D473EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution
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ADE-203-250
HB56D473EJ
304-word
72-bit
16-Mbit
HM5117400AS)
HM514100BS/CS)
16-bit
74ABT16244ADGG
HM5117400AS
Hitachi DSA00514
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HM5116400ATS
Abstract: 179d Hitachi DSA0066
Text: ADE-203-179D Z HM5116400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Rev. 4.0 Nov. 22, 1994 The Hitachi HM5116400A/AL is a CMOS dynamic RAM organized 4,194,304 words × 4 bits. It employs the most advanced CMOS technology for high performance and low power. The
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ADE-203-179D
HM5116400A/AL
304-word
mW/385
mW/358
HM5116400B/BL
HM5116400BS/BLS
CP-26/24DB)
HM5116400ATS
179d
Hitachi DSA0066
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74ABT16244ADGG
Abstract: HB56D472EJ HM5116400AS
Text: ADE-203-241 Z HB56D472EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module Rev. 0 Apr. 20, 1994 The HB56D472EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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ADE-203-241
HB56D472EJ
304-word
72-bit
16-Mbit
HM5116400AS)
HM514100BS/CS)
16-bit
74ABT16244ADGG
HM5116400AS
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74ABT16244
Abstract: HB56D472EJ HM5116400AS Hitachi DSA0088
Text: HB56D472EJ -6AC/7AC/8AC Preliminary 4,194,304-Word x 72-Bit High Density Dynamic RAM Module Rev. 0.1 Jun. 19, 1995 The HB56D472EJ belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56D472EJ
304-Word
72-Bit
16-Mbit
HM5116400AS)
HM514100CS)
16-bit
74ABT16244)
74ABT16244
HM5116400AS
Hitachi DSA0088
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HM62V8512LFP
Abstract: HM53861J M51419 16M dram dram zip 256kx16 m514280 hn27c1024hg 4M DRAM EDO M5241605 HM534253BT
Text: Memories Dynamic RAMs DRAM Access time ns 60 80 {HM5116100AS/ATS J F.P. 4k refresh -4Mx4 - {HM5116400AS/ATS ] F.P. 4k refresh 1HM51W16400AS/ATS ] F.P. 4k refresh 1HM5117400AS/ATS ] F.P. 2k refresh -3.3V operation- 16M- 70 -16Mx1 -3.3V operation— 2Mx8 -3.3V operation-
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-16Mx1
operation60
HM5116100AS/ATS
HM5116400AS/ATS
1HM51W16400AS/ATS
1HM5117400AS/ATS
HM51W17400ATS
HM5117800BJ/BTT
HM5117805BJ/BTT
HM51W17800BJ/BTT
HM62V8512LFP
HM53861J
M51419
16M dram
dram zip 256kx16
m514280
hn27c1024hg
4M DRAM EDO
M5241605
HM534253BT
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Untitled
Abstract: No abstract text available
Text: HB56A840BR Series 8 ,3 8 8 ,6 0 8 -w o rd x 4 0 -b it H ig h D e n s ity D y n a m ic R A M M o d u le The HB56A840BR is a 8 M x 40 dynamic RAM module, mounted 20 pieces of 16-Mbit DRAM H M 5116400AS sealed in SOJ package. An outline of the HB56A840BR is 72-pin single in
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HB56A840BR
16-Mbit
5116400AS)
72-pin
HB56A840BR-6A
HB56A840BR-7A
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HB56D836SBT-AC
Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Text: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms
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72-pin
A132BV/BU-B/BL
HB56A132SBV-B/BL
HB56A132BV/BU-C/CL
HB56A132SBV-C/CL
HB56A132BW-B/BL
HB56A132SBW-B/BL
HB56A132BW-C/CL
HB56A132SBW-C/CL
HB56A232BT-B/BL
HB56D836SBT-AC
power bank 5v
4Mx1
514400C
m514400c
473e
HM514400BS BLS
B56A
HM5116400ATS
5117800B
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m51164
Abstract: ALRS8 a1a511 A255K HM5116400ATS A8819
Text: HM5116400A/AL Series 4,194,304-w ord x 4-bit Dynam ic Random Access Memory The H itachi H M 5 116400A /A L is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high perform ance and low power. The
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HM5116400A/AL
304-word
ns/70
ns/80
mW/385
mW/358
16-bit
m51164
ALRS8
a1a511
A255K
HM5116400ATS
A8819
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Untitled
Abstract: No abstract text available
Text: HB56A440BR Series 4,1 9 4 ,3 0 4 -w o rd x 4 0 -b it H igh D e n s ity D y n a m ic R A M M o du le The HB56A440BR is a 4 M x 40 dynamic RAM m odule, m ounted 10 pieces o f 16-M bit DRAM H M 5 1 1 6 4 0 0 A S sealed in SO J p ack ag e. An outline o f the HB56A 440BR is 72-pin single in
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HB56A440BR
HB56A
440BR
72-pin
HB56A440BR-6A
HB56A440BR-7A
HB56A440BR-8A
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HM5116400ATS
Abstract: No abstract text available
Text: ADE-203-179D Z HM5116400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi HM5 116400A /A L is a CM OS dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high perform ance and low power. The
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ADE-203-179D
304-word
HM5116400A/AL
16400A
5116400A7AL
HM5116400AS/ALS-6
HM5116400AS/ALS-7
HM5116400AS/ALS-8
HM5116400ATS/ALTS-6
HM5116400ATS/ALTS-7
HM5116400ATS
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