HM5116400AS
Abstract: No abstract text available
Text: HB56A440BR Series 4,194,304-word x 40-bit High Density Dynamic RAM Module The HB56A440BR is a 4 M × 40 dynamic RAM module, mounted 10 pieces of 16-Mbit DRAM HM5116400AS sealed in SOJ package. An outline of the HB56A440BR is 72-pin single inline package. Therefore, the HB56A440BR makes
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HB56A440BR
304-word
40-bit
16-Mbit
HM5116400AS)
72-pin
HM5116400AS
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Untitled
Abstract: No abstract text available
Text: HM5116400AS7GS 1/2 IL08 * C-MOS 16M(4,194,304x4)-BIT DYNAMIC RAM - TOP VIEW - 1 V DD (+5V) GND 26 I/O1 I/O 2 25 I/O4 I/O I/O2 I/O 3 24 I/O3 I/O WE IN 4 23 CAS IN RAS IN 5 22 OE IN A11 IN 6 21 A9 IN 9 10 11 12 15 16 17 18 19 21 8 6 A0 A1 A2 A3 A4
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HM5116400AS7GS
304x4
A0-A11
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HM5116400ATS
Abstract: 179d Hitachi DSA0066
Text: ADE-203-179D Z HM5116400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Rev. 4.0 Nov. 22, 1994 The Hitachi HM5116400A/AL is a CMOS dynamic RAM organized 4,194,304 words × 4 bits. It employs the most advanced CMOS technology for high performance and low power. The
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ADE-203-179D
HM5116400A/AL
304-word
mW/385
mW/358
HM5116400B/BL
HM5116400BS/BLS
CP-26/24DB)
HM5116400ATS
179d
Hitachi DSA0066
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HM5116400AS
Abstract: D13IO
Text: HB56A840BR Series 8,388,608-word x 40-bit High Density Dynamic RAM Module The HB56A840BR is a 8 M × 40 dynamic RAM module, mounted 20 pieces of 16-Mbit DRAM HM5116400AS sealed in SOJ package. An outline of the HB56A840BR is 72-pin single inline package. Therefore, the HB56A840BR makes
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HB56A840BR
608-word
40-bit
16-Mbit
HM5116400AS)
72-pin
HM5116400AS
D13IO
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HB56T432D
Abstract: HM5116400ATS
Text: HB56T432D Series 4,194,304-word ✕ 32-bit High Density Dynamic RAM Module The HB56T432D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16-Mbit DRAM (HM5116400ATS/ ALTS) sealed in TSOP package. An outline of the HB56T432D is 72-pin Zig Zag
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HB56T432D
304-word
32-bit
16-Mbit
HM5116400ATS/
72-pin
HM5116400ATS
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74ABT16244ADGG
Abstract: HB56A464EJ HM5116400AS
Text: ADE-203-219B Z HB56A464EJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module Rev. 2 Jul. 11, 1994 The HB56A464EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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ADE-203-219B
HB56A464EJ
304-word
64-bit
16-Mbit
HM5116400AS)
16-bit
74ABT16244ADGG)
74ABT16244ADGG
HM5116400AS
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HM6287HL-35
Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM
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74ABT16244ADGG
Abstract: HB56A472E HB56A472E-6A HM5116400ATS CE054
Text: HB56A472E Series 4,194,304-word ✕ 72-bit ECC High Density Dynamic RAM Module Description The HB56A472E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56A472E
304-word
72-bit
HM5116400ATS)
74ABT16244ADGG)
168-pin
74ABT16244ADGG
HB56A472E-6A
HM5116400ATS
CE054
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74ABT16244ADGG
Abstract: HB56D473EJ HM5117400AS Hitachi DSA00514
Text: ADE-203-250 Z HB56D473EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module Preliminary Rev. 0 Apr. 20, 1994 The HB56D473EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution
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ADE-203-250
HB56D473EJ
304-word
72-bit
16-Mbit
HM5117400AS)
HM514100BS/CS)
16-bit
74ABT16244ADGG
HM5117400AS
Hitachi DSA00514
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74ABT16244ADGG
Abstract: HB56D472EJ HM5116400AS
Text: ADE-203-241 Z HB56D472EJ Series 4,194,304-word x 72-bit High Density Dynamic RAM Module Rev. 0 Apr. 20, 1994 The HB56D472EJ belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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ADE-203-241
HB56D472EJ
304-word
72-bit
16-Mbit
HM5116400AS)
HM514100BS/CS)
16-bit
74ABT16244ADGG
HM5116400AS
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HN58C256 Series
Abstract: HN58V1001 hm514270a hm62256a HM628512 HN58C1001 Series DP-32 HN27C4096A HN62442 HM658512
Text: Package Information Contents Dual-in-line-Plastic Applicable Ics CERDIP Applicable Ics Zigzag-in-line Plastic Applicable Ics Flat Package Applicable Ics Chip Carrier Applicable Ics Package Information Dual-in-line Plastic Unit: mm • DP-18C 22.26 22.86 Max
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DP-18C
DP-20N
DP-22N
16160A
HM5118160A
HM51W18160A
CP-44
HN27C1024H
HN27C4096
HN62444
HN58C256 Series
HN58V1001
hm514270a
hm62256a
HM628512
HN58C1001 Series
DP-32
HN27C4096A
HN62442
HM658512
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74ABT16244
Abstract: HB56D472EJ HM5116400AS Hitachi DSA0088
Text: HB56D472EJ -6AC/7AC/8AC Preliminary 4,194,304-Word x 72-Bit High Density Dynamic RAM Module Rev. 0.1 Jun. 19, 1995 The HB56D472EJ belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.
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HB56D472EJ
304-Word
72-Bit
16-Mbit
HM5116400AS)
HM514100CS)
16-bit
74ABT16244)
74ABT16244
HM5116400AS
Hitachi DSA0088
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4 bit dynamic ram
Abstract: 4170A 16 bit static RAM 16 BIT WORD STATIC RAM Dynamic RAM HB56B48 mask ram HM51 HM512200B HM514405C
Text: CONTENTS • Quick Reference Guide to Hitachi IC Memories . 7 • MOS RAM.
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D-85540
Abstract: HM5116400ATS
Text: HB56T432D Series 4,194,304-Word x 32-Bit High Density Dynamic RAM Module HITACHI The HB56T432D is a 4M x 32 dynamic R A M Small Outline D IM M S .O .D IM M , mounted 8 pieces of 16-Mbit D R A M (HM5116400ATS) sealed in TSOP package. An outline of the HB56T432D is 72-pin Zig Zag
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HB56T432D
304-Word
32-Bit
16-Mbit
HM5116400ATS)
72-pin
D-85540
HM5116400ATS
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HM5116400ATS
Abstract: No abstract text available
Text: ADE-203-179D Z HM5116400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi HM5 116400A /A L is a CM OS dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high perform ance and low power. The
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ADE-203-179D
304-word
HM5116400A/AL
16400A
5116400A7AL
HM5116400AS/ALS-6
HM5116400AS/ALS-7
HM5116400AS/ALS-8
HM5116400ATS/ALTS-6
HM5116400ATS/ALTS-7
HM5116400ATS
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HM62V8512LFP
Abstract: HM53861J M51419 16M dram dram zip 256kx16 m514280 hn27c1024hg 4M DRAM EDO M5241605 HM534253BT
Text: Memories Dynamic RAMs DRAM Access time ns 60 80 {HM5116100AS/ATS J F.P. 4k refresh -4Mx4 - {HM5116400AS/ATS ] F.P. 4k refresh 1HM51W16400AS/ATS ] F.P. 4k refresh 1HM5117400AS/ATS ] F.P. 2k refresh -3.3V operation- 16M- 70 -16Mx1 -3.3V operation— 2Mx8 -3.3V operation-
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-16Mx1
operation60
HM5116100AS/ATS
HM5116400AS/ATS
1HM51W16400AS/ATS
1HM5117400AS/ATS
HM51W17400ATS
HM5117800BJ/BTT
HM5117805BJ/BTT
HM51W17800BJ/BTT
HM62V8512LFP
HM53861J
M51419
16M dram
dram zip 256kx16
m514280
hn27c1024hg
4M DRAM EDO
M5241605
HM534253BT
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m51164
Abstract: UD 1208 HM5116400ATS M5116400
Text: M H ~ r HM5116400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI T h e H ita c h i H M 5 1 1 6 4 0 0 A /A L is a CM O S dynamic RAM organized 4,194,304 words x 4 bits. It em ploys the m ost advanced CMOS technology fo r h ig h p e r f o rm a n c e a n d low p o w er. T h e
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HM5116400A/AL
304-word
116400A/AL
300-mil
24/26-pin
CP-24DB)
2-i/25-pin
TTP-24DA)
24-26-pin
77P-24DA)
m51164
UD 1208
HM5116400ATS
M5116400
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Untitled
Abstract: No abstract text available
Text: HB56A840BR Series 8 ,3 8 8 ,6 0 8 -w o rd x 4 0 -b it H ig h D e n s ity D y n a m ic R A M M o d u le The HB56A840BR is a 8 M x 40 dynamic RAM module, mounted 20 pieces of 16-Mbit DRAM H M 5116400AS sealed in SOJ package. An outline of the HB56A840BR is 72-pin single in
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HB56A840BR
16-Mbit
5116400AS)
72-pin
HB56A840BR-6A
HB56A840BR-7A
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HB56D836SBT-AC
Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Text: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms
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72-pin
A132BV/BU-B/BL
HB56A132SBV-B/BL
HB56A132BV/BU-C/CL
HB56A132SBV-C/CL
HB56A132BW-B/BL
HB56A132SBW-B/BL
HB56A132BW-C/CL
HB56A132SBW-C/CL
HB56A232BT-B/BL
HB56D836SBT-AC
power bank 5v
4Mx1
514400C
m514400c
473e
HM514400BS BLS
B56A
HM5116400ATS
5117800B
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HM5116400ATS
Abstract: No abstract text available
Text: HB56A472E Series 4 ,1 9 4 ,3 0 4 -w o rd X 7 2 -b it EC C High D e n s ity D y n a m ic R A M M o du le Description The HB56A472E belongs to 8 Byte DIMM (Dual In-line M em ory M odule) fam ily, and has been developed as an optimized main memory solution
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HB56A472E
116400A
16244ADGG)
B56A472E
168-pin
B56Acle.
HM5116400ATS
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Untitled
Abstract: No abstract text available
Text: HB56A440BR Series 4,1 9 4 ,3 0 4 -w o rd x 4 0 -b it H igh D e n s ity D y n a m ic R A M M o du le The HB56A440BR is a 4 M x 40 dynamic RAM m odule, m ounted 10 pieces o f 16-M bit DRAM H M 5 1 1 6 4 0 0 A S sealed in SO J p ack ag e. An outline o f the HB56A 440BR is 72-pin single in
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HB56A440BR
HB56A
440BR
72-pin
HB56A440BR-6A
HB56A440BR-7A
HB56A440BR-8A
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HM5116400ATS
Abstract: HT206
Text: HB56T432D Series 4,194,304-word X 32-bit High Density Dynamic RAM Module The H B 56T 432D is a 4 M x 32 dynam ic RAM Sm all O utline DIM M S .0 . DIM M , mounted 8 p ie c e s o f 16-M bit D R A M (H M 51 16400A T S / ALTS) sealed in TSOP package. An outline o f the H B56T432D is 72-pin Zig Zag
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HB56T432D
304-word
32-bit
6400A
B56T432D
72-pin
72-pin)
HM5116400ATS
HT206
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