DATA SHEET OF IC 317
Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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HM511000P
Abstract: HM511000P12S HM511000 HM511000ZP-10S HM511000-12
Text: -Preliminary HM511000S Serles 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi HM511000S series is a CMOS dynamic RAM or ganized 1048576-word x 1-bit. HM511000S has realized higher density, higher performance and various functions by employing
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HM511000S
1048576-word
18-pin
20-pin
HM511000P
HM511000P12S
HM511000
HM511000ZP-10S
HM511000-12
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HN613256P
Abstract: HN27C301 1S00G CRACK DETECTION PATTERNS HN27256
Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. ST RU CTU RE 1C memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memo ries is high speed but small capacity, instead, MOS
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511000A
Abstract: m511000aljp-10 M511000A HM511000P-12 511000 21010-10 HM511001-12 18PIN AAA1M100-12 AAA1M200-07
Text: 201 IM m CMOS X * ít £ c o Á ^ TRAC nax ns TRCY min (ns) TCAD min (ns) TAH min (ns) D y n a m i c R A M (1 0 4 8 5 7 6 x 1 ) m 's 7 ' TP min (ns) TWCY min (ns) TDH min (ns) TRWC V D D or V C C (ns) (V) 1 8 P I N m I DD max (itiA) Â I DD STANDBY ( 1 SB/ I SB2)
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18PIN
HM511001AP/JP/ZP-7
HM511001G-10
HM511001G-12
HM511001G-15
HM511001P-10
HM511001P-12
511000A
m511000aljp-10
M511000A
HM511000P-12
511000
21010-10
HM511001-12
AAA1M100-12
AAA1M200-07
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free transistor equivalent book 2sc
Abstract: HA13108 HL7801G HL7801E free thyristor equivalent book 2sc 2SC1707 HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint HD44237 semi catalog pic micro weighing scale code example
Text: RELIABILITY 1. 1.1 R E L IA B IL IT Y R E L IA B IL IT Y C H A R A C T E R IS T IC S F O R S E M IC O N D U C T O R D E V IC E S Hitachi semiconductor devices are designed, manufactured and inspected so as to achieve a high level of reliability. Accordingly, system reliability can be improved by com
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62256 hitachi
Abstract: 28 pin plastic dip hitachi dimension hitachi PLC
Text: Reliability of Hitachi 1C Memories 1. Structure The dies of IC memories are encapsulated in various packages. The most common packages are plastic and cerdip. Plastic packages are widely used in many different types of equipment. Cerdip packaging is especially suitable in equipment
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HM6116L
Abstract: HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP
Text: • PACKAGE INFORMATION • Dual-in-line Plastic Unit: mm {inch Scale 1/1 • D P -1 6 B • D P -1 8 19 2 Í0 756) 20 32m a , J L 2 54 - 0 .2 5 C 48 - O f <■ 0 !00 ' 0 0 10> ( o 0 19 ' 0 0 0 4 ) ■J-L 0 l5 ii '"To.OlO-.«» 2 54 * 0 25 □ Í8 • 0
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CG-20
CG-22A
CG-24
CG-28
HM6267CG
HM6287CG
HM6787CG
HM100490CG
HM100422CG,
HM100415CG
HM6116L
HM51256P
HN62404P
HM65256AP
HN27C301G
HN613128P
hn623257
HM6147
HN27256P
HN613128FP
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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HM511000AJP8
Abstract: HM511000-12 HM511000P10S HM511000A HM511000AJP-10 HM511000 HM511000P-12 HM511000P HM511000S 11000AP
Text: H M S 1 1000S Series H M S 1 1000A Series 1048576-word x 1-bit C M O S Dynamic R A M The Hitachi HM511000S/A series is a CMOS dynamic RAM organized 1048576-word x 1-bit. HM511000S/A has realized higher density, higher performance and various functions by employing 1.3 ^tm CMOS process technology and some new
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1000S
1048576-word
HM511000S/A
18-pin
20-pin
HM511000AJP8
HM511000-12
HM511000P10S
HM511000A
HM511000AJP-10
HM511000
HM511000P-12
HM511000P
HM511000S
11000AP
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HM511000
Abstract: dynamic ram 8 bit hm511000 HM511000P M511000 HM511000-12 HM511000-10 HM511000JP-12 DG 402 rp HM511000ZP-12 ir 2210 ic
Text: HM511000 Series 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi HM511000 Series is a CMOS dynamic RAM organized 1,048,576-word x 1-bit. HM511000 has realized higher density, higher performance and various functions by employing 1.3/im CMOS process technology and some new CMOS circuit
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HM511000
1048576-word
576-word
HM511000,
18-pin
20-pin
dynamic ram 8 bit hm511000
HM511000P
M511000
HM511000-12
HM511000-10
HM511000JP-12
DG 402 rp
HM511000ZP-12
ir 2210 ic
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27c301
Abstract: HM6788P-25 HM6788
Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. S TR U C TU R E IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memories is high speed but small capacity, instead, MOS memories have large capacity.
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