Untitled
Abstract: No abstract text available
Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600
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60N60B2D1
IC110
O-264
PLUS247
2x61-06A
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60n6
Abstract: No abstract text available
Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600
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60N60B2D1
IC110
2x61-06A
60n6
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diode b34
Abstract: b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor 40N60BD1 C110
Text: Advanced Technical Information HiPerFAST TM IGBT with Diode IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient
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40N60BD1
PLUS247
diode b34
b34 diode
b34 datasheet
b34 844
PLUS247
B34 on
B34 transistor
C110
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60N60B2D1
Abstract: ixgk60n60b2d1 PLUS247 ixgx60n60b2d1
Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600
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60N60B2D1
IC110
2x61-06A
ixgk60n60b2d1
PLUS247
ixgx60n60b2d1
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siemens igbt 75a
Abstract: PLUS247
Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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60N60C2D1
IC110
2x61-06A
siemens igbt 75a
PLUS247
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IGBT 60N60C2D1
Abstract: siemens igbt 75a PLUS247 60N60C2D1
Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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60N60C2D1
IC110
2x61-06A
IGBT 60N60C2D1
siemens igbt 75a
PLUS247
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ems 505
Abstract: PLUS247 IXGX50N60C2D1 HIPERFAST IGBT WITH DIODE
Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60C2D1 VCES IXGX 50N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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50N60C2D1
IC110
2x61-06A
728B1
123B1
728B1
065B1
ems 505
PLUS247
IXGX50N60C2D1
HIPERFAST IGBT WITH DIODE
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50N60B2
Abstract: No abstract text available
Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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50N60B2D1
IC110
IF110
O-264
PLUS247
0-06A
065B1
728B1
50N60B2
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50N60B2D1
Abstract: 50n60 IXGX50N60B2D1 50N60B2 60-06A IF110 PLUS247 ixgk50n60b2d1
Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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50N60B2D1
IC110
IF110
0-06A
065B1
728B1
123B1
728B1
50n60
IXGX50N60B2D1
50N60B2
60-06A
IF110
PLUS247
ixgk50n60b2d1
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60N60C2D1
Abstract: IGBT 60N60C2D1 MD 202 60N60 siemens igbt 75a TO-264-aa 60-06A IF110 PLUS247 HIPERFAST IGBT WITH DIODE
Text: HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM
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60N60C2D1
IC110
IF110
O-264
0-06A
IGBT 60N60C2D1
MD 202
60N60
siemens igbt 75a
TO-264-aa
60-06A
IF110
PLUS247
HIPERFAST IGBT WITH DIODE
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Untitled
Abstract: No abstract text available
Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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50N60B2D1
IC110
O-264
IF110
PLUS247
0-06A
065B1
728B1
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Untitled
Abstract: No abstract text available
Text: IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) HiPerFAST TM IGBT with Diode = 600 V = 75 A = 2.1 V = 180 ns Preliminary Data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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40N60BD1
IC110
O-264
728B1
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Untitled
Abstract: No abstract text available
Text: m yY V C •■¡I O jl IXGN 50N60BD2 IXGN 50N60BD3 HiPerFAST IGBT with HiPerFRED V CES ^C25 V CE sat t Buck & boost configurations = 600 V = 75 A = 2.5 V = 150 ns IGBT .BD2 Symbol TestC onditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V CGR
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50N60BD2
50N60BD3
IXGN50N60BD2
120AlF=
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BC 247 B
Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
Text: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25
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IXGH32N60CD1
IXGH32N60CD1S
O-247
32N60CD1S)
BC 247 B
IXGH32N60
DIODE SMD GEM
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smd diode UJ 64 A
Abstract: cz 017 v3
Text: □IX Y S Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode tfi Test Conditions VCES Tj = 25 °C to 150°C 600 V V CGR Tj = 25 °C to 150°C; RGE = 1 M ii 600 V v GES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25 °C ^C90
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OCR Scan
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IXGH32N60BU1
IXGH32N60BU1S
O-247
4bflb22b
smd diode UJ 64 A
cz 017 v3
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6G E 2080 diode
Abstract: IXGH24N50BU1 IXGH24N60BU1 24n60
Text: v CES HiPerFAST IGBT with Diode Symbol IXGH24N50BU1/S IXGH24N60BU1/S Maximum Ratings Test Conditions 24N50 Tj = 25“C to 150°C 500 600 V vCGfl vGES vGEM Tj = 25°C to 150°C; RaE = 1 MQ 500 600 V Continuous ±20 V Transient ±30 V ^C25 *C90 ^CM T c = 25°C
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IXGH24N50BU1/S
IXGH24N60BU1/S
24N50
24N60
O-247
24NS0BU1
IXGH24W6SU1
24N50BU1
24N60BU1
6G E 2080 diode
IXGH24N50BU1
IXGH24N60BU1
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diode lt 247
Abstract: IXGH32N60
Text: ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode v 600 V 60 A 2.1V 55 ns CES ^C25 v CE sat typ ^fl(typ) Light Speed Series Symbol Test Conditions V CES ^ Vco* Tj = 25°C to 150°C; V « Maximum Ratings = 25°C to 150°C
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IXGH32N60CD1
IXGH32N60CD1S
O-247
32N60CD1S)
diode lt 247
IXGH32N60
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IXGR32N60CD1
Abstract: No abstract text available
Text: □ TXYS HHifl JLæ* 3k. X HiPerFAST IGBT with Diode ISOPLUS247™ IXGR 32N60CD1 = 600 V = 45 A = 2.1 V = 55 ns V,CES IC25 V CE SAT typ ^fi(typ) (Electrically Isolated Backside) Preliminary data sheet Symbol TestC onditions V C ES Tj = 25°C to 150°C 600
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ISOPLUS247â
32N60CD1
IXGR32N60CD1
IXGR32N60CD1
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ph-15 diode
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFAST IGBT with Diode IXGH IXGT 20N60BD1 20N60BD1 V CES ^C25 VCE sat typ t’fi(typ) Combi Pack Symbol Test Conditions Maximum Ratings T j = 25° C to 150" C 600 V Tj = 25' C to 150 C; RGf = 1 M li 600 V Continuous ±20
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20N60BD1
20N60BD1
O-268
O-247AD
ph-15 diode
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Untitled
Abstract: No abstract text available
Text: • lililí! Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode v0E, u, CE sat typ Combi Pack ^fi(typ) 500 V 44 A 2.1 V 55 ns TO-247SMD* Symbol Test Conditions VCES VCOR Jj 25°C to 150°C T,J = 25°C to 150°C; Rb t VGES VQEM Continuous
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IXGH22N50BU1
IXGH22N50BU1S
O-247SMD*
O-247
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ic tea 1090
Abstract: smd tea 521 27AD
Text: Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S v CES ^C25 v* CE sat % Combi Pack = = = = 600 V 75 A 2.7 V 275 ns T0-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MO
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IXGX50N60AU1
IXGX50N60AU1S
T0-247
50N60AU1S)
O-247
s1997
ic tea 1090
smd tea 521
27AD
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IXSH24N60A
Abstract: No abstract text available
Text: □ IXYS HiPerFAST IGBT with Diode / IXSH24N60U1S IXSH24N60U1 IXSH24N60AU1 / IXSH24N60AU1S V CES ^C25 V C E sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V v CGR T d = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i
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IXSH24N60U1S
IXSH24N60U1
IXSH24N60AU1
IXSH24N60AU1S
24N60U1
24N60AU1
24N60U1S
24N60AU1S
IXSH24N60A
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931 diode smd
Abstract: g20n60
Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient
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OCR Scan
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PDF
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1
IXGH24N60AU1S
4bflb22t.
931 diode smd
g20n60
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smd diode 819
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C
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PDF
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IXGH32N60AU1
IXGH32N60AU1S
O-247
32N60AU1S)
IXGH32N60AU1
IXQH32N60AU1S
XGH32N60AU1
smd diode 819
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