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    HIGH-VOLTAGE TO SAMSUNG TV Search Results

    HIGH-VOLTAGE TO SAMSUNG TV Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    HIGH-VOLTAGE TO SAMSUNG TV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KSA910

    Abstract: KSC2310 3050 transistor
    Text: SAMSUNG SEMICONDUCTOR IN C -m e KSA910 D | ? cl b 4 m 2 QOOböOa 1 | 2-3 PNP EPITAXIAL SILICON TRANSISTOR DRIVER STAGE AUDIO AMPLIFIER HIGH VOLTAGE SWITCHING APPLICATIONS TO-92L •Complement to KSC2310 1Collector-Emitter Voltage Vceo=-150V 1Output Capacitance:


    OCR Scan     		PDF 1b4142 KSA910 KSC2310 -150V O-92L KSC2310 3050 transistor

    C 3311 transistor

    Abstract: T-33-11 T3311 transistor jt T-3311 007B KSD5016 KSD5015 transistor 800V 1A npn transistor vceo 800v
    Text: QG07fc,74 m O I KSD5015 SAMSUNG SEMICONDUCTOR NPN TRIPLE DIFFUSED PLANAR SILIC O N TRAN SISTO R INC COLOR TV HORIZONTAL' OUTPUT APPLICATIONS T-33-11 TO*3P(F High Collector-Base Voltage Vceo=1500V ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage


    OCR Scan     		PDF g07fc, KSD5015 1500Y T-33-11 KSD5016 00q7b C 3311 transistor T-33-11 T3311 transistor jt T-3311 007B KSD5016 KSD5015 transistor 800V 1A npn transistor vceo 800v

    transistor a 92 a 331

    Abstract: TRANSISTOR Q 667 transistor samsung tv transistor D 667 D F 331 TRANSISTOR C 3311 transistor
    Text: IME D I 7^4142 G00?b?4 I NPN TRIPLE DIFFUSED KSD5015 SAMSUNG SEMICONDUCTCR PLANAR SILICON TRANSISTOR INC COLOR TV HORIZONTAL OUTPUT APPLICATIONS T -33-11 TO-3P(F High Collector-Base Voltage Vceo-ISOOV ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic


    OCR Scan     		PDF KSD5015 CTO-92 0QG77fe transistor a 92 a 331 TRANSISTOR Q 667 transistor samsung tv transistor D 667 D F 331 TRANSISTOR C 3311 transistor

    LB 122 transistor To-92

    Abstract: LB 122 NPN TRANSISTOR LB 122 transistor KSC815 KSA539 L300 samsung l300 TRANSISTOR A52
    Text: SAMSUNG SEMICONDUCTOR INC KSC815 IME D | 7 cJ b 4 m 2 OODbASl 2 | NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR TO-92 • Complement to KSA539 • Collector-Base Voltage Vcao=60V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic


    OCR Scan     		PDF 71b4142 KSC815 KSA539 LB 122 transistor To-92 LB 122 NPN TRANSISTOR LB 122 transistor KSA539 L300 samsung l300 TRANSISTOR A52

    samsung tv

    Abstract: d 331 Transistor
    Text: SAMSUNG SEMICONDUCTOR KSC1520 INC 1ME D | V 'lb m ia 0007S40 1 | NPN EPITAXIAL SILICON TRANSISTOR T 33- 07 COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter Voltage Vceo=250V • Current Gain-Bandwidth Product fT=80MHz iyp ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 0007S40 KSC1520 80MHz O-202 GQG77fe samsung tv d 331 Transistor

    samsung tv

    Abstract: T337 KSC1520 KSC1983 TO-202 transistor NPN I44A
    Text: SAMSUNG SEMICONDUCTOR KSC1520 INC 1ME 0 | V 'lb m ia 0007S40 1 | NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - COLOR TV CHROMA OUTPUT 7 TO-202 • High Collector-Emitter Voltage Vceo=250V • Current Gain-Bandwidth Product fT=80MHz iyp ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 0007S40 KSC1520 80MHz O-202 100/iA, 3K5K10K samsung tv T337 KSC1983 TO-202 transistor NPN I44A

    KSA634

    Abstract: transistor FS 20 SM KSC1096 KSD18 KSD1891 D01002 KSB1151 SO-330 F33-C transistor bI 240
    Text: SAMSUNG SEMICONDUCTOR INC ^ KSB1151 14E D | T 'ìt M lM à QaO?S5fl PNP EPITAXIAL SILICON TRANSISTOR T LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT - Ì 3 - Ì ? TO-126 HIGH POWER DISSIPATION: PT=1.3W <T.=25°C Complementary to KSD1891 ABSOLUTE MAXIMUM RATINGS Ta=25°C)


    OCR Scan     		PDF KSB1151 KSD1891 O-126 KSA634 transistor FS 20 SM KSC1096 KSD18 KSD1891 D01002 SO-330 F33-C transistor bI 240

    D F 331 TRANSISTOR

    Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27
    Text: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )


    OCR Scan     		PDF KSD5012 T-33-11 GQG77fe D F 331 TRANSISTOR lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27

    C 3311 transistor

    Abstract: diode 226 T-33-11 la08a KSD5011 KSD5012 samsung tv l008A T3311
    Text: SAMSUNG SEMICONDUCTOR INC KSD5011 i me d I T 'ib M m a ooo?tta 4 | NPNTHIPUfc DIFFUSED PLANAR SILIC O N TRAN SISTO R T-33-11 CO LOR TV HORIZONTALNOUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage Vcso= 1500V v ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSD5011 0D07kL2 T-33-11 Vcc-200V 0007bb7 C 3311 transistor diode 226 T-33-11 la08a KSD5011 KSD5012 samsung tv l008A T3311

    transistor bc 209 npn

    Abstract: transistor bc 207 npn transistor BC 209 TRANSISTOR BC 208 bc 301 transistor transistor darlington 800v transistor bc 207 TRANSISTOR BC 206 IC-5V-54B2 KSD1693
    Text: ¡ SAMSUNG S EMIC ONDUCT OR INC KSD1692 14E | 7^4142 00071,31 4 | NPN SILICON DARLINGTON TRANSISTOR T HIGH DC CURRENT GÀIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C - 3 3 I , ? TO-126 HIGH POWER DISSIPATION : PT = 1.3W T.=25°C ABSOLUTE MAXIMUM RATINGS <Ta=25°C )


    OCR Scan     		PDF KSD1692 O-126 PWC10 KSD5000 IC-5V--54B2 L-50OiM 0007b3? transistor bc 209 npn transistor bc 207 npn transistor BC 209 TRANSISTOR BC 208 bc 301 transistor transistor darlington 800v transistor bc 207 TRANSISTOR BC 206 IC-5V-54B2 KSD1693

    KSC2310

    Abstract: J-Z9-23
    Text: SAMSUNG S EM I C O N D U C T O R INC 14 E 0 KSC2310 17^4142 OOOb'ilt 4 | NPN EPITAXIAL SILICON TRANSISTOR T -Z 9 -2 3 HIGH VOLTAGE POWER AMPLIFIER • Collactor— B«m Voltage Vc*o»200V TO-92L • Currant Gain-Bandwidth Product fT-100MHz OVp ABSOLUTE MAXIMUM RATINGS Ta=25°C)


    OCR Scan     		PDF KSC2310 100MHz J-Z9-23 O-92L lc-100/iA, J-Z9-23

    KSA545

    Abstract: KSC853 LTAGE WALTA
    Text: SAMSUNG SEMI C O NDU CT OR INC KSC853 11E | V lfcq ita O O Ob S S ? 3 | 'T - - 1 - f t NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER • Complement to KSA545 • High Collector-Bas* Voltage Vcso =70V • Collector Dissipation Pc =400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF 7U414E KSC853 KSA545 400mW KSA545 LTAGE WALTA

    KSA709

    Abstract: KSC1009
    Text: SAMSUNG SEMICONDUCTOR INC T v M - v 2 3 l 4 E KSA709 O | OOGbflOE O PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE AMPLIFIER • C o lle cto r-B a s e Voltage Vcso = -160V • C o lle cto r D issip a tio n P c =800mW • C o m p le m en t to KSC1009 TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF KSA709 -160V 800mW KSC1009 -100/iA, KSC1009

    diode lt 238

    Abstract: samsung tv lt 332 diode samsung SSE
    Text: SAMSUNG SEMICONDUCTOR INC KSD5011 im e d I ao a?tta 4 N P N T R IF L t DIFFUSED P L A N A R SIL IC O N T R A N SIS T O R T-33-11 C O L O R TV HORIZONTALNOUTPUT APPLICA TIO N S DAM PER DIO DE BUILT IN TO-3P(F) High Collector-Base Voltage V cbo =1500V A BSO LU T E M A X IM U M RATINGS (Ta=25°C)


    OCR Scan     		PDF KSD5011 T-33-11 GQG77fe diode lt 238 samsung tv lt 332 diode samsung SSE

    200V transistor npn 2a

    Abstract: samsung tv Samsung Semiconductor Q007t d 331 TRANSISTOR equivalent
    Text: SAMSUNG SEMICONDUCTOR IME INC O 0007bM7 fl I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5004 T-33 -13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS HIGH Collector* ««* Voltage V eto « 1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C ) Characteristic CoHector-Base Voltage


    OCR Scan     		PDF 0007bM7 KSD5004 SaturatO-92 GQG77fe 200V transistor npn 2a samsung tv Samsung Semiconductor Q007t d 331 TRANSISTOR equivalent

    samsung tv

    Abstract: T-33-H KSD5007 KSD5010 200V transistor npn 2a
    Text: SAMSUNG INC SEMICONDUCTOR 14E D | 7^4142 OOOTbSb T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5007 T-2>3-i5 COLOR TV HORIZONTAL'OUTPUT APPLICATIONS High Collector-Base Voltage V c s o = 1500V ABSOLUTE. MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage


    OCR Scan     		PDF KSD5007 KSD5010 0007bbl T-33-11 samsung tv T-33-H KSD5007 KSD5010 200V transistor npn 2a

    KSC2333

    Abstract: NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2073 KSC2233 KSC2335 samsung tv YS 150 003 b
    Text: SAMSUNG SEM ICONDUCTOR INC KSC2Ö73 l^ E D | GOOTSMb 2 NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - o q TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSA940 • Collector-Base Voltage Vcso=150V ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic ; I


    OCR Scan     		PDF KSC2073 KSA940 r-33-ctf O-220 KSC2333 NPN Transistor TO220 vcc 150V transistor 400v 3a 40w 180MH KSA940 KSC2233 KSC2335 samsung tv YS 150 003 b

    samsung 217

    Abstract: samsung tv NPN Transistor 1A 800V to - 92 ksd5002
    Text: SAMSUNG SEMICONDUCTOR 14E INC D 7^4142 0QQ7t41 7 KSD5002 "T-33-13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS (DAMPER DIODE BUILT IN HIGH Collector-Base Voltage V c so = 1500V ABSOLUTE MAXIMUM RATINGS (TB= 2 5 0C) Characteristic I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR


    OCR Scan     		PDF 0QQ7t41 KSD5002 GQG77fe samsung 217 samsung tv NPN Transistor 1A 800V to - 92 ksd5002

    BF 234 transistor

    Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv
    Text: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q | ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz


    OCR Scan     		PDF KSC2786 600MHz -22dB 100MHz O-92S KSC2786 100MHz T-31-17 BF 234 transistor transistor RF POWER TRANSISTOR 100MHz samsung tv

    equivalent transistor c 243

    Abstract: samsung tv
    Text: SAMSU NG SEMICONDUCTOR INC D | 7^4142 GOO?b b f l 5 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5013 T -3 3 -1 1 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN High Collector-Base Voltage VCbo=1500V ABSOLUTE M AXIM UM RATINGS (Ta = 25°C )


    OCR Scan     		PDF KSD5013 0QG77fe equivalent transistor c 243 samsung tv

    TNY 260

    Abstract: samsung flyback pin diagram TNY IC POWER SUPPLY flyback samsung diagram KA2136 flyback samsung Samsung TV circuit diagram samsung tab samsung tv tny 12v
    Text: SAMSUNG SEM ICON DU CTOR INC Ifl Î>Ë| 7 ^ 4 1 4 2 0004130 S : KA2136 ' f - “i i ^ o n "A I' LINEAR INTEGRATED CIRCUIT LOW NOISE TV VERTICAL DEFLECTION SYSTEM The KA2136 is a monolithic integrated circuit in a 12-lead Quad in­ line plastic package. It’s intended for use In black & white and color


    OCR Scan     		PDF KA2136 KA2136 12-lead TNY 260 samsung flyback pin diagram TNY IC POWER SUPPLY flyback samsung diagram flyback samsung Samsung TV circuit diagram samsung tab samsung tv tny 12v

    samsung tv

    Abstract: 4142
    Text: SAMSUNG INC S EM I C ON D U C T O R KSC1520A IME 0007542 NPN EPITAXIAL SILICON TRANSISTOR " r-3 2 > - c n ~ COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter \foltaga Veto =300V • Current Gain-Bandwldth Product fT=80MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSC1520A O-202 80MHz GQG77fe samsung tv 4142

    samsung tv

    Abstract: samsung SSE
    Text: SAMSUNG SEMICONDUCTOR 14E D |? 1 f c ,4 I 4 Z a a Q 7 t, S i 3 I INC N PN T R IP L E D IF FU SED P L A N A R SIL IC O N T R A N SIST O R KSD5006 — COLOR TV HORIZONTAL OUTPUT APPLICATIONS HIGH Collector-Base Voltage T-S3-13 V Cb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS Ta= 2 5pC


    OCR Scan     		PDF KSD5006 Ves--800V, GQG77fe samsung tv samsung SSE

    transistor 711

    Abstract: DO 127 samsung tv
    Text: IME D I 7 ^ 4 1 4 2 Q007b?7 b | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5016 SAM SUN G SEM ICOND UC TO R INC T-33-11 V COLOR TV HORIZONTAL OUTPUT APPLICATIONS TO-3P F High Collector-Bass Vottags Vcso=1500V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic


    OCR Scan     		PDF Q007b KSD5016 T-33-11 GQG77fe transistor 711 DO 127 samsung tv