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    KSB1151 Price and Stock

    onsemi KSB1151YSTU

    TRANS PNP 60V 5A TO126-3
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    DigiKey KSB1151YSTU Tube 848 1
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    Avnet Americas KSB1151YSTU Tube 1,920
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    Mouser Electronics KSB1151YSTU 576
    • 1 $0.65
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    Newark KSB1151YSTU Bulk 1,920
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    Rochester Electronics KSB1151YSTU 106 1
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    TME KSB1151YSTU 1
    • 1 $0.713
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    Chip One Stop KSB1151YSTU Tube 22
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    EBV Elektronik KSB1151YSTU 11 Weeks 1,920
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    onsemi KSB1151YS

    TRANS PNP 60V 5A TO126-3
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    DigiKey KSB1151YS Bulk 461 1
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    Avnet Americas KSB1151YS Bulk 0 Weeks, 2 Days 2,500
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    KSB1151YS Bulk 4,000
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    Mouser Electronics KSB1151YS 22,365
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    Newark KSB1151YS Bulk 2,000
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    Rochester Electronics KSB1151YS 1,370 1
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    TME KSB1151YS 1
    • 1 $0.711
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    ComSIT USA KSB1151YS 2,849
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    Avnet Silica KSB1151YS 11 Weeks 2,000
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    EBV Elektronik KSB1151YS 11 Weeks 2,000
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    Flip Electronics KSB1151YS 6,000
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    Rochester Electronics LLC KSB1151YS

    POWER BIPOLAR TRANSISTOR, 5A, 60
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    DigiKey KSB1151YS Bulk 839
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    Rochester Electronics LLC KSB1151YSTU

    TRANS PNP 60V 5A TO126-3
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    DigiKey KSB1151YSTU Bulk 767
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    Rochester Electronics LLC KSB1151YSTSTU

    TRANS PNP 60V 5A TO126-3
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    DigiKey KSB1151YSTSTU Bulk 1,025
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    KSB1151 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KSB1151 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB1151 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB1151 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan PDF
    KSB1151 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KSB1151 Samsung Electronics PNP (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT) Scan PDF
    KSB1151G Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB1151O Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB1151Y Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB1151YS Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB1151YSTSSTU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB1151YSTSSTU_NL Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB1151YSTSTU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB1151YSTSTU_NL Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB1151YSTU Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
    KSB1151YSTU_NL Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF

    KSB1151 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ksd 150 full safe

    Abstract: KSB1151 ksd 75
    Text: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    KSB1151 O-126 ksd 150 full safe KSB1151 ksd 75 PDF

    ksd 150 full safe

    Abstract: KSB1151
    Text: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    KSB1151 O-126 ksd 150 full safe KSB1151 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSB1151 Bipolar CD-ROM Edition 4.01 This Data Sheet is subject to change without notice. 1 / 3 Page (C) 1997 SAMSUNG Electronics Printed in Korea KSB1151 Bipolar CD-ROM (Edition 4.01) This Data Sheet is subject to change without notice. 2 / 3 Page (C) 1997 SAMSUNG Electronics


    Original
    KSB1151 PDF

    d1691

    Abstract: d1691-y D1691-G
    Text: KSD1691 KSD1691 Feature • Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W Ta=25°C • Complementary to KSB1151 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    KSD1691 KSB1151 O-126 PW10ms, Cycle50% KSD1691 KSD1691GS KSD1691OS KSD1691YS d1691 d1691-y D1691-G PDF

    Untitled

    Abstract: No abstract text available
    Text: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    KSB1151 O-126 PW10ms, Cycle50% PDF

    K*D1691

    Abstract: KSB1151 KSD1691
    Text: KSD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 • HIGH POWER DISSIPATION: PC = 1.3W TA=25°C • Complementary to KSB1151 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector- Base Voltage Collector-Emitter Voltage


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    KSD1691 O-126 KSB1151 PW10ms, Cycle50% K*D1691 KSB1151 KSD1691 PDF

    KSD1691Y

    Abstract: KSD1691 KSD1691GS K*D1691
    Text: KSD1691 KSD1691 Feature • Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W Ta=25°C • Complementary to KSB1151 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    KSD1691 KSB1151 O-126 PW10ms, Cycle50% unleTO-126 KSD1691Y KSD1691 KSD1691GS K*D1691 PDF

    ksd 150 full safe

    Abstract: K*D1691 ksd 75
    Text: KSB1151 KSB1151 Feature • • • • Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W Ta=25°C Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    KSB1151 O-126 PW10ms, Cycle50% ksd 150 full safe K*D1691 ksd 75 PDF

    KSD1691

    Abstract: No abstract text available
    Text: KSD1691 KSD1691 Feature • Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W Ta=25°C • Complementary to KSB1151 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    KSD1691 KSB1151 O-126 KSD1691 PDF

    K*D1691

    Abstract: KSB1151 KSD1691
    Text: KSD1691 KSD1691 Feature • Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W Ta=25°C • Complementary to KSB1151 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSD1691 KSB1151 O-126 K*D1691 KSB1151 KSD1691 PDF

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


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    O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920 PDF

    BJT BD139

    Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
    Text: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1


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    O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD157 2JD210 BJT BD139 TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003 PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    PDF

    tip122 tip127 audio board

    Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
    Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents


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    Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    K*D1691

    Abstract: No abstract text available
    Text: KSD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 HIGH POWER DISSIPATION : PT = 1.3W T. =25°C Complementary to KSB1151 ABSOLUTE MAXIMUM RATINGS Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan
    KSD1691 KSB1151 O-126 K*D1691 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSB1151 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT T O -126 HIGH PO W ER DISSIPATIO N : Pc= 1 .3 W TA=25°C C om plem ent to KSD 1691 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic V cbO


    OCR Scan
    KSB1151 PDF

    KSA634

    Abstract: transistor FS 20 SM KSC1096 KSD18 KSD1891 D01002 KSB1151 SO-330 F33-C transistor bI 240
    Text: SAMSUNG SEMICONDUCTOR INC ^ KSB1151 14E D | T 'ìt M lM à QaO?S5fl PNP EPITAXIAL SILICON TRANSISTOR T LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT - Ì 3 - Ì ? TO-126 HIGH POWER DISSIPATION: PT=1.3W <T.=25°C Complementary to KSD1891 ABSOLUTE MAXIMUM RATINGS Ta=25°C)


    OCR Scan
    KSB1151 KSD1891 O-126 KSA634 transistor FS 20 SM KSC1096 KSD18 KSD1891 D01002 SO-330 F33-C transistor bI 240 PDF

    transistor 2A pnp

    Abstract: KSB1151
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSB1151 LOW COLLECTOR SATURATION VOLTAG E LARGE CURRENT T O - 126 H IG H P O W E R D IS S IP A T IO N : P c= 1 .3 W T A= 2 5 °C C o m p le m e n t to K S D 1691 A BSOLUTE M AXIMUM RATINGS R a tin g U n it C o l le c to r-B a s e V o lta g e


    OCR Scan
    KSB1151 O-126 Unit00 transistor 2A pnp KSB1151 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW C O L L E C T O R SATURATION VO LTAGE LAR G E CURREN T TO -1 26 HIGH POWER DISSIPATION: PT=1.3W T,=25°C Complement to KSD1691 A B S O L U T E M AXIM U M RATINGS Characteristic Symbol Collector-Base Voltage V cbo


    OCR Scan
    KSB1151 KSD1691 350ns. PDF

    Untitled

    Abstract: No abstract text available
    Text: KSB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 HIGH POWER DISSIPATION: PC=1.3W TA=25°C Complement to KSD 1691 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Symbol -6 0 V Collector-Emitter Voltage


    OCR Scan
    KSB1151 O-126 PDF

    d1691

    Abstract: d 1691
    Text: KSB1151 PHP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT HIGH P O W E R DISSIPATION : Pc=1.3W TA= 2 5 r Complement to K S D 1691 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage VcBO Sym b o l -6 0 V Collector-Emitter Voltage


    OCR Scan
    KSB1151 d1691 d 1691 PDF

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


    OCR Scan
    OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v PDF

    ksd 250v 10a

    Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
    Text: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715


    OCR Scan
    OT-23 KSC2223 KSC2715 KSC1674 KSC1674/ KSC167Î KSC838/KSC167 ksd 250v 10a ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072 PDF