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    C 3311 transistor

    Abstract: diode 226 T-33-11 la08a KSD5011 KSD5012 samsung tv l008A T3311
    Text: SAMSUNG SEMICONDUCTOR INC KSD5011 i me d I T 'ib M m a ooo?tta 4 | NPNTHIPUfc DIFFUSED PLANAR SILIC O N TRAN SISTO R T-33-11 CO LOR TV HORIZONTALNOUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage Vcso= 1500V v ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    PDF KSD5011 0D07kL2 T-33-11 Vcc-200V 0007bb7 C 3311 transistor diode 226 T-33-11 la08a KSD5011 KSD5012 samsung tv l008A T3311

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    Abstract: No abstract text available
    Text: # GM71V16403C GM71VS16403CL LG Semican Go Ltd LA3 o tS fT IIC U n W U .,L ,iU . CMOS DYNAMIC RAM Description Features The GM71V S 16403 C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)16403C/CL has realized higher density, higher performance and


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    PDF GM71V16403C GM71VS16403CL GM71V 16403C/CL 16403C/CL 402B7S7

    D F 331 TRANSISTOR

    Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27
    Text: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )


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    PDF KSD5012 T-33-11 GQG77fe D F 331 TRANSISTOR lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27

    TSO-C148

    Abstract: RCA 719 RMS 01 EBT GR-253-CORE PM5346 PM5348 11CT40 PM5348R philips ferrite core 4b1
    Text: PM S ta n d a r d P r o d u c t PM C-950919 PM C-Sierra, Inc. JSSUE6 PM5 3 4 8 S/UNI-DUAL SA TURN USER NETWORK INTERFACE FEATURES • Single chip dual ATM User-Network Interface operating at 155.52 and 51.84 Mbit/s. • Provides essential hardware and software compatibility with industry-standard


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    PDF PM5348S/UN/-DUAL pmc-950919 PM5346 CI0041CI1 TSO-C148 RCA 719 RMS 01 EBT GR-253-CORE PM5348 11CT40 PM5348R philips ferrite core 4b1