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    HIGH VOLTAGE AND CURRENT SMD TRANSISTOR Search Results

    HIGH VOLTAGE AND CURRENT SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE AND CURRENT SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ad marking

    Abstract: transistor smd marking AD 2SA1418
    Text: Transistors SMD Type High-Voltage Switching Applications 2SA1418 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SA1418 -250mA -25mA -50mA ad marking transistor smd marking AD 2SA1418

    2SC3646

    Abstract: No abstract text available
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC3646 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SC3646 400mA 100mA 2SC3646

    SMD BR 08

    Abstract: 2SA1416
    Text: Transistors SMD Type High-Voltage Switching Applications 2SA1416 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SA1416 -400mA -40mA -100mA SMD BR 08 2SA1416

    smd diode ua

    Abstract: transistor smd marking 2SC3648
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC3648 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SC3648 250mA smd diode ua transistor smd marking 2SC3648

    SMD iC MARKING AE

    Abstract: 2SA1419 ae marking
    Text: Transistors SMD Type High-Voltage Switching Applications 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage


    Original     		PDF 2SA1419 -500mA -50mA SMD iC MARKING AE 2SA1419 ae marking

    2SA1417

    Abstract: No abstract text available
    Text: Transistors SMD Type High-Voltage Switching Applications 2SA1417 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage


    Original     		PDF 2SA1417 -100mA 2SA1417

    smd marking cc

    Abstract: 2SC3647
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC3647 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage


    Original     		PDF 2SC3647 Min400 100mA smd marking cc 2SC3647

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC3649 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage


    Original     		PDF 2SC3649 500mA

    SMD transistor code NC

    Abstract: DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code
    Text: SMD Signal DMOS Transistor N-Channel 2N7002 SMD Signal DMOS Transistor (N-Channel) Features • • • • • Voltage Controlled Small Signal Switch High Density Cell Design for Low RDS(ON) Rugged and Reliable High Saturation Current Capablity RoHS Compliance


    Original     		PDF 2N7002 OT-23, OT-23 MIL-STD-202G, SMD transistor code NC DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code

    BD transistor

    Abstract: smd marking BD 2SB1189 BD marking
    Text: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80


    Original     		PDF 2SB1189 -500mA -50mA 100MHz BD transistor smd marking BD 2SB1189 BD marking

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SA1586 Features High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1586 -100mA, -10mA

    ie-500

    Abstract: smd marking vl 2SD1950 marking VM
    Text: Transistors SMD Type NPN Silicon Epitaxia 2SD1950 Features High dc current gain and good hFE. Low collector saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage


    Original     		PDF 2SD1950 ie-500 smd marking vl 2SD1950 marking VM

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD1950 Features High dc current gain and good hFE. Low collector saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage


    Original     		PDF 2SD1950

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SB1125 Features High DC Current gain. Large Current Capaity and wie ASO Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -50 V Emitter-base voltage


    Original     		PDF 2SB1125 -500mA -100mA -50mA

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1125 Features High DC Current gain. Large Current Capaity and wie ASO Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage


    Original     		PDF 2SB1125 -50mA -500mA -100mA

    pnp hfe 120-240

    Abstract: smd marking SG MARKING SO smd marking sy 2SA1586
    Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1586 Features High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1586 -100mA, -10mA pnp hfe 120-240 smd marking SG MARKING SO smd marking sy 2SA1586

    Untitled

    Abstract: No abstract text available
    Text: Transistor IC Transistors DIP SMDType Type SMD Type Product specification 2N5551 Features Switching and amplification in high voltage Applications such as telephony Low current max. 600mA High voltage(max.180V) Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		PDF 2N5551 600mA) 100MHz

    smd bf

    Abstract: 2SB1123 BF Marking
    Text: Transistors SMD Type High-Current Switching Applications 2SB1123 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		PDF 2SB1123 250mm250 -50mA smd bf 2SB1123 BF Marking

    SMD TRANSISTOR MARKING 2.x

    Abstract: 2STM2360 210EH
    Text: 2STM2360 Low voltage fast-switching PNP power transistor Target specification Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Leadless, small and thin SMD plastic package with excellent thermal behaviour


    Original     		PDF 2STM2360 M2360 SMD TRANSISTOR MARKING 2.x 2STM2360 210EH

    2SC4135

    Abstract: No abstract text available
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC4135 TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 High breakdown voltage and large current capacity. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0


    Original     		PDF 2SC4135 O-252 100mA 2SC4135

    Untitled

    Abstract: No abstract text available
    Text: Transistor IC Transistors DIP SMDType Type Type SMD DIP Type Product specification 2N5401 TO-92 • Features ● Switching and amplification in high voltage ● Applications such as telephony ● Low current max. 600mA ● High voltage(max.150V) 1 2 3 1. Emitter


    Original     		PDF 2N5401 600mA) -10mA 30MHz

    2SC4134

    Abstract: No abstract text available
    Text: Transistors SMD Type High-Voltage Switching Applications 2SC4134 TO-252 Features 6.50 +0.2 5.30-0.2 High breakdown voltage and large current capacity. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0


    Original     		PDF 2SC4134 O-252 100mA 400mA 2SC4134

    TRANSISTOR SMD MARKING CODE 1a

    Abstract: STA3250F STA3250 SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89
    Text: STA3250F PNP Silicon Transistor PIN Connection Applications • Power amplifier application • High current switching application Features • Low saturation voltage: VCE sat =-0.15V Typ. @ IC=-1A, IB=-50mA • Large collector current capacity: IC=-2A • Small and compact SMD type package


    Original     		PDF STA3250F -50mA STC4250F OT-89 STA3250F KSD-T5B005-002 TRANSISTOR SMD MARKING CODE 1a STA3250 SMD CODE PACKAGE SOT89 TRANSISTOR SMD CODE PACKAGE SOT89

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT89 TRANSISTOR SMD MARKING CODE 210 TRANSISTOR SMD MARKING CODE 2V TRANSISTOR SMD CODE PACKAGE SOT89 4 MARKING SMD IC CODE STC4350F transistor smd 08t STA3350F
    Text: STC4350F NPN Silicon Transistor PIN Connection Applications • Power amplifier application • High current switching application Features • Low saturation voltage: VCE sat =0.15V Typ. @ IC=1A, IB=50mA • Large collector current capacity: IC=3A • Small and compact SMD type package


    Original     		PDF STC4350F STA3350F OT-89 KSD-T5B008-003 TRANSISTOR SMD MARKING CODE 2A MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT89 TRANSISTOR SMD MARKING CODE 210 TRANSISTOR SMD MARKING CODE 2V TRANSISTOR SMD CODE PACKAGE SOT89 4 MARKING SMD IC CODE STC4350F transistor smd 08t STA3350F