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    HIGH SPEED UV PHOTOTRANSISTOR Search Results

    HIGH SPEED UV PHOTOTRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP2304 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed / IPM driver, 1 Mbps, 3750 Vrms, 5pin SO6 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2766A Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed, 20 Mbps, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH SPEED UV PHOTOTRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L9657

    Abstract: S10604
    Text: 2007 Vol.2 E x h i b i t i o n s NEWS 2007 Vol.2 NEWS Belgium / Denmark / France / Germany / Italy / Netherlands / North Europe & CIS / November Vision 2007 Stuttgart / Germany UKAEA (Oxford / UK) Productronica 2007 (Munich / Germany) 35th Scottish Microscopy Symposium


    Original     		PDF SE-17141 52/1A RU-113054 L9657 S10604

    Light Detector laser

    Abstract: short distance measurement ir infrared diode
    Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that


    Original     		PDF KOTH0001E15 Light Detector laser short distance measurement ir infrared diode

    carli mpx

    Abstract: Adjustable Power Supply Schematic Diagram circuit diagram of alpha 400 power supply MP ee25 transformer SK Series yageo chopper transformer winding variable power supply circuit switching power supply transformer construction yw-360-02b EE25 transformer
    Text: Title Reference Design Report for a 36 W Continuous, 72 W Peak Power Supply Using PKS606YN Specification 90 – 265 VAC Input, 12 V, 36 W Continuous 72 W Peak Output Application Variable Speed Motor Drive Author Power Integrations Applications Department


    Original     		PDF PKS606YN RDR-128 CISPR-22 EN55022B carli mpx Adjustable Power Supply Schematic Diagram circuit diagram of alpha 400 power supply MP ee25 transformer SK Series yageo chopper transformer winding variable power supply circuit switching power supply transformer construction yw-360-02b EE25 transformer

    Transmissive Optical Sensor 3 pin

    Abstract: photoconductive light sensor yellow LED Reflective Optical Sensor APD-300L OPTICAL INTERRUPTER APD900 GaP photodiode APD apd500 uv phototransistor led 905 660
    Text: Optical Switch Series Transmissive and Reflective Photo-interrupters Photo-interrupters are used to detect object passage and proximity presence, and they are available in two forms: transmissive and reflective. In the transmissive group, the infared LED and phototransistor are


    Original     		PDF OS-P200 OSD100-0A OSD100-5TA Transmissive Optical Sensor 3 pin photoconductive light sensor yellow LED Reflective Optical Sensor APD-300L OPTICAL INTERRUPTER APD900 GaP photodiode APD apd500 uv phototransistor led 905 660

    photodiode ge

    Abstract: TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation
    Text: Physics and Technology Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors consist of two or more different elements of group three (e.g.,


    Original     		PDF 26-Aug-08 photodiode ge TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation

    uv phototransistor

    Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
    Text: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200


    Original     		PDF 14-Apr-04 uv phototransistor 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015

    BPW-20R

    Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
    Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200


    Original     		PDF

    Physics and Technology

    Abstract: physics pn junction diode structure
    Text: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors


    Original     		PDF 06-Oct-14 Physics and Technology physics pn junction diode structure

    TSAL6200

    Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
    Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si


    Original     		PDF

    PC925LE

    Abstract: GP2Y0A60 pc815xnns pc3sd13 GP2Y0A02YK PR36MF51NS PC357NJ0000F
    Text: OPTO • Photocoupler PHOTOCOUPLER LINEUP Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage Low input current AC input response Darlington phototransistor High sensitivity,


    Original     		PDF PC357NJ0000F PC451J00000F PC364NJ0000F PC355NJ0000F PC452J00000F PC367NJ0000F PC354NJ0000F PC365NJ0000F GP1UF31xXP0F: GP1UF31xYP0F: PC925LE GP2Y0A60 pc815xnns pc3sd13 GP2Y0A02YK PR36MF51NS

    in4148WS

    Abstract: CTX03-16222 BZX399-1V8 MOCD217 50-WATT GRM1885C1H151JA01B uv phototransistor EMK325BJ106MN GRM188R71H152KA01B IRF7832
    Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: forward converter, isolated supply, current mode, pwm controller May 16, 2003 APPLICATION NOTE 2040 50W Current-Mode Forward Converter Design with the MAX8540 Abstract: This application note details the design of a 50-watt, isolated, forward converter, using the MAX8540


    Original     		PDF MAX8540 50-watt, 36-75VDC. 200uH 12pin CTX03-16222 31264R com/an2040 MAX8540: in4148WS CTX03-16222 BZX399-1V8 MOCD217 50-WATT GRM1885C1H151JA01B uv phototransistor EMK325BJ106MN GRM188R71H152KA01B IRF7832

    CTX03-16222

    Abstract: IN4148WS BZX399-1V8 zener diode 50w 24V GRM188R71H472KA01B CTX03 APP203 MOCD217 C4532X7R2A474M IRF7832
    Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: off line, foward converter, isolated supply, voltage mode, pwm controller, forward converter, offline, power supplies May 16, 2003 APPLICATION NOTE 2039 50W Voltage-Mode Forward Converter Design with the MAX8541


    Original     		PDF MAX8541 12pin CTX03-16222 31264R com/an2039 MAX8541: AN2039, APP2039, Appnote2039, CTX03-16222 IN4148WS BZX399-1V8 zener diode 50w 24V GRM188R71H472KA01B CTX03 APP203 MOCD217 C4532X7R2A474M IRF7832

    sensor BPW34 application note

    Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,


    Original     		PDF VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note

    phototransistor application lux meter

    Abstract: BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor
    Text: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF VEMT4700 VSML3710 VEMT4700 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 phototransistor application lux meter BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor

    BPW21R

    Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
    Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al


    Original     		PDF

    sensor BPW34 application note

    Abstract: CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01
    Text: V ishay I ntertechnolog y, I nc . Optoelectronics – Products for Industrial Applications AND TEC I INNOVAT O L OGY Guide to Industrial Applications N HN OPTOELECTRONICS O 19 62-2012 TABLE OF CONTENTS


    Original     		PDF VMN-MS6520-1201 sensor BPW34 application note CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01

    TSSP4038

    Abstract: No abstract text available
    Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original     		PDF VMN-MS6520-1311 TSSP4038

    EVLB001 Dimmable Fluorescent Ballast

    Abstract: ix859 ACROS pressure switch MBRS140CT dali power supply circuit diagram Application AT90PWM2 ballast fluorescent lamp dimmable Fluorescent BALLAST 40w fluorescent lamp circuit diagram tube ballast for 40W tube pulse transformer 415v
    Text: ATAVRFBKIT / EVLB001 Dimmable Fluorescent Ballast . User Guide Section 1 Introduction . 1-1


    Original     		PDF EVLB001 7597B EVLB001 Dimmable Fluorescent Ballast ix859 ACROS pressure switch MBRS140CT dali power supply circuit diagram Application AT90PWM2 ballast fluorescent lamp dimmable Fluorescent BALLAST 40w fluorescent lamp circuit diagram tube ballast for 40W tube pulse transformer 415v

    Vishay TYPE 40D

    Abstract: Vishay 40d AC 1506 panasonic inverter dv 707
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original     		PDF VMN-MS6520-1506 Vishay TYPE 40D Vishay 40d AC 1506 panasonic inverter dv 707

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    PS2701 optocoupler

    Abstract: PS2701-4 PS2701-1
    Text: HIGH ISOLATION VOLTAGE SOP MULTI OPTOCOUPLER ps2701-4 FEATURES_ DESCRIPTION_ • PS2701 -1, -2, and -4 are optically coupled isolators contain­ ing a GaAs light emitting diode and a NPN silicon phototransistor. Each is mounted in a plastic SOP Small


    OCR Scan     		PDF ps2701-4 PS2701 PS2701-1 PS2701-2 PS2701-4 PS2701 optocoupler

    S288P

    Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
    Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of


    OCR Scan     		PDF

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    BD9886FV

    Abstract: BD9886 INVERTER bd9886fv bd9884fv b0350 TEPSL PMP25 bd-9b MCR03 ER b0352
    Text: 2008 SPRING Energy saving ! ECO Devices E x c e lle n c e in E le c tro n ic s ROHM ECO Devices Using ROHM ECO Devices saves energy and reduces CO2 generation. At ROHM we are committed to saving energy by reducing the power consumption of equipment. This starts at the component level - the basic building blocks of all circuits. ROHM, the leading


    OCR Scan     		PDF 50N5880E BD9886FV BD9886 INVERTER bd9886fv bd9884fv b0350 TEPSL PMP25 bd-9b MCR03 ER b0352