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    HIGH POWER GAAS FET Search Results

    HIGH POWER GAAS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER GAAS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C-Band Power GaAs FET

    Abstract: NEZ3642-4D NEZ3642-8D NEZ4450-4D NEZ4450-8D NEZ5964-4D NEZ5964-8D NEZ6472-4D NEZ7177-4D NEZ7785-4D
    Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm 0.5±0.1 The NEZ Series of microwave power GaAs FETs offer C1.5 4PLACES GATE 2.5MIN. high output power, high gain and high efficiency at C-band


    Original     		PDF

    NEC 2561

    Abstract: 2561 nec NEC semiconductor 2561 17-33 0952 2561 a nec NE6501077 nec 0882 p 2 nec 2561 4 pin
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S 17.5 ±0.5


    Original     		PDF NE6501077 NE6501077 NEC 2561 2561 nec NEC semiconductor 2561 17-33 0952 2561 a nec nec 0882 p 2 nec 2561 4 pin

    NEZ1011-4E

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NEZ1011-4E 4 W X-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1011-4E is power GaAs FET which provides high gain, high efficiency and high output power in X-band. 8.25 ± 0.15


    Original     		PDF NEZ1011-4E NEZ1011-4E

    NE6500496

    Abstract: 094-3 MAG
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1


    Original     		PDF NE6500496 NE6500496 094-3 MAG

    NES1417B-30

    Abstract: nec 1441
    Text: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1.7GHz 24±0.3


    Original     		PDF NES1417B-30 NES1417B-30 nec 1441

    NEZ1011-8E

    Abstract: No abstract text available
    Text: DATA PRODUCT SHEET PRELIMINARY INFORMATION GaAs MES FET NEZ1011-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1011-8E is power GaAs FET which provides high 0.5±0.05 1.5 CHAMFER 4 PLACES gain, high efficiency and high output power in Ku-band.


    Original     		PDF NEZ1011-8E NEZ1011-8E

    POUT36

    Abstract: NES1821B-30 p1209
    Text: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz 24±0.3


    Original     		PDF NES1821B-30 NES1821B-30 POUT36 p1209

    NES2527B-30

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES2527B-30 is power GaAs FET which 24±0.3 provides high output power and high gain in the 2.5 - 2.7 20.4 GHz band.


    Original     		PDF NES2527B-30 NES2527B-30

    M 1661 S

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power


    OCR Scan     		PDF MGFC2415A MGFC2400 150mA M 1661 S

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power


    OCR Scan     		PDF MGFC2407A MGFC2400

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band


    OCR Scan     		PDF NEZ3642-4D, NEZ4450-4D, NEZ5964ter

    NE6500278

    Abstract: 10NEC 2410 nec
    Text: PRELIMINARY DATA SHEET_ GaAs MES FET NE6500278 2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band.


    OCR Scan     		PDF NE6500278 NE6500278 NE6500278-E3 10NEC 2410 nec

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ GaAs MES FET NE6500278 2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band.


    OCR Scan     		PDF NE6500278 NE6500278 NE6500278-E3 10535E) IR30-00-3

    sn 0716

    Abstract: NEC D 587
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1


    OCR Scan     		PDF NE6500496 NE6500496 sn 0716 NEC D 587

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSIONS UNIT: mm DESCRIPTION The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7


    OCR Scan     		PDF NES2527B-30 NES2527B-30

    NEC 2561

    Abstract: sn 1699 NEC 2561 E 2561 a nec sn 0952 2561 nec nec d 1590 NEC semiconductor 2561 NEC 1357 NEC 2561 h
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.


    OCR Scan     		PDF NE6501077 NE6501077 NEC 2561 sn 1699 NEC 2561 E 2561 a nec sn 0952 2561 nec nec d 1590 NEC semiconductor 2561 NEC 1357 NEC 2561 h

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The PACKAGE DIMENSIONS UNIT: mm NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal


    OCR Scan     		PDF NES2527B-30

    NES1417B30

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1,7GHz band. Internal input


    OCR Scan     		PDF NES1417B-30 NES1417B-30 NES1417B30

    NEC D 809 F

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input


    OCR Scan     		PDF NES1821B-30 NES1821B-30 NEC D 809 F

    sp 0937

    Abstract: NEC D 809 F NEC K 2124 NEC D 809 L
    Text: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-2E 2 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-2E is pow er GaAs FET which provides 8.25 +0.15 high gain, high efficiency and high output power in KuGate


    OCR Scan     		PDF NEZ1414-2E NEZ1414-2E sp 0937 NEC D 809 F NEC K 2124 NEC D 809 L

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-4E 4 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-4E is power GaAs FET which provides high gain, high efficiency and high output power in Ku-band. The internal input and output matching enables guaran­


    OCR Scan     		PDF NEZ1414-4E NEZ1414-4E

    nec 2571

    Abstract: nec 2571 4 pin NEC 1357 ez 946 k 3918 fet IMS 3630
    Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION P A C K A G E D IM EN SIO N S unit: mm The N EZ Series of microwave power GaAs FE T s offer 0.5 +0.1 high output power, high gain and high efficiency at C-band


    OCR Scan     		PDF

    nec 2561

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS


    OCR Scan     		PDF NE6501077 NE6501077 nec 2561

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NEZ1011-2E 2 W X-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The N EZ10 1 1-2E is pow er GaAs FET which provides 8.25 +0.15 high gain, high efficiency and high output power in XGate


    OCR Scan     		PDF NEZ1011-2E