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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power


    OCR Scan     		PDF MGFC2407A MGFC2400

    MGFC2407

    Abstract: MGF2407A
    Text: A Die_ MGFC2407 Package MGF2407A m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION MGFC2407 FEATURES The MGFC2400 series GaAs FETs are N-channel Schottky gate devices designed for high frequency, medium and high power applications. • High output power


    OCR Scan     		PDF MGFC2400 250mW* MGF2400 12GHz MGFC2407 MGF2407A MGF2407A