far uv photodiode
Abstract: S1722-02 S1723-05 SE-171 radiation detector LARGE SURFACE AREA PHOTODIODE s1722
Text: PHOTODIODE Si PIN photodiode S1722-02, S1723-05 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of φ4.1 mm S1722-02 or 10 x 10 mm (S1723-05). Using quartz
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S1722-02,
S1723-05
S1722-02
S1723-05
S1722-02)
S1723-05)
S1722-02:
S1723-05:
far uv photodiode
SE-171
radiation detector
LARGE SURFACE AREA PHOTODIODE
s1722
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S1722-02, S1723-05 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of φ4.1 mm S1722-02 or 10 x 10 mm (S1723-05). Using quartz
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S1722-02,
S1723-05
S1722-02
S1723-05
S1722-02)
S1723-05)
S1722-02:
S1723-05:
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Untitled
Abstract: No abstract text available
Text: Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power
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S12271
KPIN1085E02
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S186P
Abstract: 820nM
Text: S186P Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm . The large active area combined with a flat case gives a
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S186P
S186P
D-74025
15-Jul-96
820nM
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far uv photodiode
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters.
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S1722-02
S1722-02
SE-171
KPIN1045E06
far uv photodiode
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far uv photodiode
Abstract: Radiation Detector
Text: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters.
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S1722-02
S1722-02
SE-171
KPIN1045E04
far uv photodiode
Radiation Detector
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Untitled
Abstract: No abstract text available
Text: TEMD5110 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5110 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area and an infrared bandpass filter matched to IR
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TEMD5110
TEMD5110
2000/53/EC,
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TEMD5120 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5120 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 4.4 mm2 sensitive area and an infrared bandpass filter matched to IR
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TEMD5120
TEMD5120
J-STD-20)
2000/53/EC,
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TEMD5120 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5120 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 4.4 mm2 sensitive area and an infrared bandpass filter matched to IR
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TEMD5120
TEMD5120
J-STD-20)
2000/53/EC,
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TEMD5110 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5110 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area and an infrared bandpass filter matched to IR
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TEMD5110
TEMD5110
2000/53/EC,
2002/95/EC
2002/96/EC
08-Apr-05
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GR-253-CORE
Abstract: STM-16 T481 T483 T485 xlaa InGaas PIN photodiode, 1550 DFB 1300 rise time
Text: a8e re AdLib OCR Evaluation systems Data Sheet, Rev. 1 October 2001 T48-Type 1300 and 1500 nm Uncooled 2 .5 Gbits/s Laser Transmitters Applications . Telecommunications : - SONET/SDH SR/IR/LR - Subscriber loop - Metropolitan area networks . High-speed data communication
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T48-Type
24-pin
OC-48
STM-16
DS00-088OPTO-1
DS00-088OPTO)
GR-253-CORE
STM-16
T481
T483
T485
xlaa
InGaas PIN photodiode, 1550
DFB 1300 rise time
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Untitled
Abstract: No abstract text available
Text: Si photodiode S9702 RGB color sensor The S9702 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9702 has a 3-segment (RGB) photosensitive
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S9702
S9702
S9032-02)
B1201,
KSPD1071E10
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Abstract: No abstract text available
Text: Si photodiode S9032-02 RGB color sensor The S9032-02 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9032-02 has a 3-segment (RGB) circular photosensitive area of ϕ2 mm.
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S9032-02
S9032-02
B1201,
KSPD1067E09
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13t 6pin
Abstract: No abstract text available
Text: Si photodiode S9702 RGB color sensor The S9702 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9702 has a 3-segment (RGB) active area of 1 mm.
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S9702
S9702
S9032-02)
SE-171
KSPD1071E04
13t 6pin
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S11059-01WT
Abstract: No abstract text available
Text: Si photodiode S9702 RGB color sensor The S9702 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9702 has a 3-segment (RGB) active area of 1 mm.
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S9702
S9702
S9032-02)
SE-171
KSPD1071E06
S11059-01WT
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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IR photodiode 865 nm
Abstract: Si pin photodiode module
Text: Si photodiode S9032-02 RGB color sensor The S9032-02 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9032-02 has a 3-segment (RGB) circular active area of φ2 mm.
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S9032-02
S9032-02
SE-171
KSPD1067E03
IR photodiode 865 nm
Si pin photodiode module
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Abstract: No abstract text available
Text: Si photodiode S10942-01CT RGB color sensor integrated in small and thin package The S10942-01CT is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the Red (λ=590 nm Min.), Green (λ=480 to 600 nm) and Blue (λ=400 to 540 nm) regions of the spectrum. When compared to the
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S10942-01CT
S10942-01CT
S9702)
B1201,
KSPD1079E05
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led cob RGB
Abstract: S11059-01WT
Text: Si photodiode S9032-02 RGB color sensor The S9032-02 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9032-02 has a 3-segment (RGB) circular active area of φ2 mm.
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S9032-02
S9032-02
SE-171
KSPD1067E06
led cob RGB
S11059-01WT
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SI 13003
Abstract: X 13003 PIN photodiode chip PIN photodiode chip 850nm 13003 applications fiber-optic photodiode for 850nm SD150-13-003 VCSEL die bonding 850nm photodiode
Text: SD150-13-003 4 Mbps Si PIN Photodiode Chip The SD150-13-003 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation. Designed to be fully depleted at
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SD150-13-003
SD150-13-003
SI 13003
X 13003
PIN photodiode chip
PIN photodiode chip 850nm
13003 applications
fiber-optic photodiode for 850nm
VCSEL die bonding
850nm photodiode
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Thermistor IR Detector
Abstract: B1920-01
Text: HAMAMATSU CORP l^ E D • 4 5 S ci t , Q I:] □ □ □ S T lL i 7 ■ High-Speed Ge Photodiodes Characteristics Type No. Out line Package No. Window Material P.28 Effective Sensitive Area Size Effective Sensitive Area (mm) (mm2) IR Cutoff Wave length
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B2297-02
B2297-03
B2297-04
2856K
K1713-01
K1713-02
K1713-03
P1026
P2750
P2748
Thermistor IR Detector
B1920-01
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Untitled
Abstract: No abstract text available
Text: Panasonic CCD Area Image Sensor MN3726MFE, MN3726MAE 6mm 1/3 inch 512H High-Resposivity CCD Area Image Sensors •O verview I Pin Assignments T y p e N o. M N 3726M FE M N 3726M A E S ize 6 m m (1/3 inch) S y stem Area | C o lo r o r B /W PAL C o lo r C C IR
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MN3726MFE,
MN3726MAE
3726M
bT32652
QD13450
104ns
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Untitled
Abstract: No abstract text available
Text: Temic BPW82 S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package it self is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters X p = 800 nm .
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BPW82
BPW82
870nm
15-Jul-96
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Untitled
Abstract: No abstract text available
Text: bGE D • ÛEBStiGS DD4h725 24b « S I E G 7 SIEMENS AKTIENGESELLSCHAF SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm Cathode 570(14 5) 492(12 5) 149 (3 8} 138 (3 5) _ u N»_ 0 100 (2541 1 157 (4 0j .149 (3 8) Max /¡fisi I 0 189(4
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DD4h725
004b72b
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