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    HIGH AREA IR PHOTODIODE Search Results

    HIGH AREA IR PHOTODIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    HIGH AREA IR PHOTODIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    far uv photodiode

    Abstract: S1722-02 S1723-05 SE-171 radiation detector LARGE SURFACE AREA PHOTODIODE s1722
    Text: PHOTODIODE Si PIN photodiode S1722-02, S1723-05 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of φ4.1 mm S1722-02 or 10 x 10 mm (S1723-05). Using quartz


    Original     		PDF S1722-02, S1723-05 S1722-02 S1723-05 S1722-02) S1723-05) S1722-02: S1723-05: far uv photodiode SE-171 radiation detector LARGE SURFACE AREA PHOTODIODE s1722

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S1722-02, S1723-05 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 and S1723-05 are high-speed Si PIN photodiodes having a large active area of φ4.1 mm S1722-02 or 10 x 10 mm (S1723-05). Using quartz


    Original     		PDF S1722-02, S1723-05 S1722-02 S1723-05 S1722-02) S1723-05) S1722-02: S1723-05:

    Untitled

    Abstract: No abstract text available
    Text: Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power


    Original     		PDF S12271 KPIN1085E02

    S186P

    Abstract: 820nM
    Text: S186P Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm . The large active area combined with a flat case gives a


    Original     		PDF S186P S186P D-74025 15-Jul-96 820nM

    far uv photodiode

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters.


    Original     		PDF S1722-02 S1722-02 SE-171 KPIN1045E06 far uv photodiode

    far uv photodiode

    Abstract: Radiation Detector
    Text: PHOTODIODE Si PIN photodiode S1722-02 Large area, high-speed PIN photodiodes for UV to near IR photometry S1722-02 is a high-speed Si PIN photodiode having a large active area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the far UV region and is suitable for optical power meters.


    Original     		PDF S1722-02 S1722-02 SE-171 KPIN1045E04 far uv photodiode Radiation Detector

    Untitled

    Abstract: No abstract text available
    Text: TEMD5110 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5110 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area and an infrared bandpass filter matched to IR


    Original     		PDF TEMD5110 TEMD5110 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TEMD5120 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5120 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 4.4 mm2 sensitive area and an infrared bandpass filter matched to IR


    Original     		PDF TEMD5120 TEMD5120 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TEMD5120 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5120 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 4.4 mm2 sensitive area and an infrared bandpass filter matched to IR


    Original     		PDF TEMD5120 TEMD5120 J-STD-20) 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TEMD5110 Vishay Semiconductors Silicon PIN Photodiode Description TEMD5110 is a high speed and high sensitive PIN photodiode. It is a miniature Surface Mount Device SMD including the chip with a 7.5 mm2 sensitive area and an infrared bandpass filter matched to IR


    Original     		PDF TEMD5110 TEMD5110 2000/53/EC, 2002/95/EC 2002/96/EC 08-Apr-05

    GR-253-CORE

    Abstract: STM-16 T481 T483 T485 xlaa InGaas PIN photodiode, 1550 DFB 1300 rise time
    Text: a8e re AdLib OCR Evaluation systems Data Sheet, Rev. 1 October 2001 T48-Type 1300 and 1500 nm Uncooled 2 .5 Gbits/s Laser Transmitters Applications . Telecommunications : - SONET/SDH SR/IR/LR - Subscriber loop - Metropolitan area networks . High-speed data communication


    Original     		PDF T48-Type 24-pin OC-48 STM-16 DS00-088OPTO-1 DS00-088OPTO) GR-253-CORE STM-16 T481 T483 T485 xlaa InGaas PIN photodiode, 1550 DFB 1300 rise time

    Untitled

    Abstract: No abstract text available
    Text: Si photodiode S9702 RGB color sensor The S9702 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9702 has a 3-segment (RGB) photosensitive


    Original     		PDF S9702 S9702 S9032-02) B1201, KSPD1071E10

    Untitled

    Abstract: No abstract text available
    Text: Si photodiode S9032-02 RGB color sensor The S9032-02 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9032-02 has a 3-segment (RGB) circular photosensitive area of ϕ2 mm.


    Original     		PDF S9032-02 S9032-02 B1201, KSPD1067E09

    13t 6pin

    Abstract: No abstract text available
    Text: Si photodiode S9702 RGB color sensor The S9702 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9702 has a 3-segment (RGB) active area of †1 mm.


    Original     		PDF S9702 S9702 S9032-02) SE-171 KSPD1071E04 13t 6pin

    S11059-01WT

    Abstract: No abstract text available
    Text: Si photodiode S9702 RGB color sensor The S9702 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9702 has a 3-segment (RGB) active area of †1 mm.


    Original     		PDF S9702 S9702 S9032-02) SE-171 KSPD1071E06 S11059-01WT

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


    Original     		PDF KSPD0001E09 near IR photodiodes S8745-01 S8558

    IR photodiode 865 nm

    Abstract: Si pin photodiode module
    Text: Si photodiode S9032-02 RGB color sensor The S9032-02 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9032-02 has a 3-segment (RGB) circular active area of φ2 mm.


    Original     		PDF S9032-02 S9032-02 SE-171 KSPD1067E03 IR photodiode 865 nm Si pin photodiode module

    Untitled

    Abstract: No abstract text available
    Text: Si photodiode S10942-01CT RGB color sensor integrated in small and thin package The S10942-01CT is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the Red (λ=590 nm Min.), Green (λ=480 to 600 nm) and Blue (λ=400 to 540 nm) regions of the spectrum. When compared to the


    Original     		PDF S10942-01CT S10942-01CT S9702) B1201, KSPD1079E05

    led cob RGB

    Abstract: S11059-01WT
    Text: Si photodiode S9032-02 RGB color sensor The S9032-02 is a color sensor molded into a plastic package having a 3-channel RGB photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm) and red (λp=620 nm) regions of the spectrum. The S9032-02 has a 3-segment (RGB) circular active area of φ2 mm.


    Original     		PDF S9032-02 S9032-02 SE-171 KSPD1067E06 led cob RGB S11059-01WT

    SI 13003

    Abstract: X 13003 PIN photodiode chip PIN photodiode chip 850nm 13003 applications fiber-optic photodiode for 850nm SD150-13-003 VCSEL die bonding 850nm photodiode
    Text: SD150-13-003 4 Mbps Si PIN Photodiode Chip The SD150-13-003 chip is a silicon pin photodiode that has been specifically developed for the price-sensitive OEM optical communication applications, including IrDA-compatible transceivers, fiber-optic LAN, VCSEL-based IR links, and instrumentation. Designed to be fully depleted at


    Original     		PDF SD150-13-003 SD150-13-003 SI 13003 X 13003 PIN photodiode chip PIN photodiode chip 850nm 13003 applications fiber-optic photodiode for 850nm VCSEL die bonding 850nm photodiode

    Thermistor IR Detector

    Abstract: B1920-01
    Text: HAMAMATSU CORP l^ E D • 4 5 S ci t , Q I:] □ □ □ S T lL i 7 ■ High-Speed Ge Photodiodes Characteristics Type No. Out­ line Package No. Window Material P.28 Effective Sensitive Area Size Effective Sensitive Area (mm) (mm2) IR Cutoff Wave­ length


    OCR Scan     		PDF B2297-02 B2297-03 B2297-04 2856K K1713-01 K1713-02 K1713-03 P1026 P2750 P2748 Thermistor IR Detector B1920-01

    Untitled

    Abstract: No abstract text available
    Text: Panasonic CCD Area Image Sensor MN3726MFE, MN3726MAE 6mm 1/3 inch 512H High-Resposivity CCD Area Image Sensors •O verview I Pin Assignments T y p e N o. M N 3726M FE M N 3726M A E S ize 6 m m (1/3 inch) S y stem Area | C o lo r o r B /W PAL C o lo r C C IR


    OCR Scan     		PDF MN3726MFE, MN3726MAE 3726M bT32652 QD13450 104ns

    Untitled

    Abstract: No abstract text available
    Text: Temic BPW82 S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package it­ self is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters X p = 800 nm .


    OCR Scan     		PDF BPW82 BPW82 870nm 15-Jul-96

    Untitled

    Abstract: No abstract text available
    Text: bGE D • ÛEBStiGS DD4h725 24b « S I E G 7 SIEMENS AKTIENGESELLSCHAF SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm Cathode 570(14 5) 492(12 5) 149 (3 8} 138 (3 5) _ u N»_ 0 100 (2541 1 157 (4 0j .149 (3 8) Max /¡fisi I 0 189(4


    OCR Scan     		PDF DD4h725 004b72b