Untitled
Abstract: No abstract text available
Text: BPW82 Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .
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BPW82
BPW82
2002/95/EC
08-Apr-05
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bpw 82
Abstract: BPW82 M/BPW82
Text: BPW 82 TELEFUNKEN Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters lpy800nm .
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BPW82
lpy800nm)
870nm
D-74025
bpw 82
M/BPW82
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BPW82
Abstract: No abstract text available
Text: BPW82 Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters l p 800 nm . The large active area combined with a flat case gives a
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PDF
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BPW82
BPW82
870nm
25the
D-74025
15-Jul-96
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Untitled
Abstract: No abstract text available
Text: BPW82 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to
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BPW82
2002/95/EC
2002/96/EC
BPW82
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: BPW82 Vishay Telefunken Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters l p 800 nm .
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PDF
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BPW82
BPW82
870nm
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: BPW82 Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .
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PDF
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BPW82
BPW82
2002/95/Eany
18-Jul-08
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BPW82
Abstract: No abstract text available
Text: BPW82 Vishay Telefunken Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters l p 800 nm .
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Original
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PDF
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BPW82
BPW82
870nm
D-74025
20-May-99
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BPW82
Abstract: No abstract text available
Text: BPW82 Vishay Telefunken Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters l p 800 nm .
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Original
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PDF
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BPW82
BPW82
870nm
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: BPW82 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to
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BPW82
2002/95/EC
2002/96/EC
BPW82
11-Mar-11
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BPW82
Abstract: No abstract text available
Text: BPW82 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions L x W x H in mm : 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to
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PDF
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BPW82
2002/95/EC
2002/96/EC
BPW82
18-Jul-08
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bpw8
Abstract: No abstract text available
Text: BPW82 VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .
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Original
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PDF
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BPW82
BPW82
D-74025
29-Mar-04
bpw8
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BPW82
Abstract: No abstract text available
Text: BPW82 Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters l p 800 nm .
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Original
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PDF
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BPW82
BPW82
870nm
D-74025
20-May-99
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BPW82
Abstract: No abstract text available
Text: BPW82 Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .
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Original
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PDF
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BPW82
BPW82
08-Apr-05
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BPW82
Abstract: No abstract text available
Text: BPW82 Vishay Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters λ p ≥ 800 nm .
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BPW82
BPW82
D-74025
08-Mar-05
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near IR sensors with daylight filter
Abstract: light sensing circuit project BPW34 application note BPW20RF
Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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TEKT5400S
TSKS5400S
2002/95/EC
2002/96/EC
TEKT5400S
2002/95/EC.
2011/65/EU.
JS709A
near IR sensors with daylight filter
light sensing circuit project
BPW34 application note
BPW20RF
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BPW34 application note
Abstract: No abstract text available
Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°
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VSMS3700
VEMT3700
J-STD-020
VSMS3700
AEC-Q101
2002/95/EC
2002/95/EC.
2011/65/EU.
JS709A
BPW34 application note
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BPW20RF
Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPV11
2002/95/EC
2002/96/EC
BPV11
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
BPW20RF
BPW34 osram
phototransistor application lux meter
BPW41
BPW34 application note
BPW20RF application
BPW41N IR DATA
wi41g
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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VSMF4720
VSMF4720
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
BPW34 application note
APPLICATION NOTE BpW34
lux meter calibration
RB94
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BPW46
Abstract: BPW34 osram
Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power
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VSLB3940
2002/95/EC
2002/96/EC
VSLB3940
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
BPW46
BPW34 osram
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DC24V
Abstract: 5273-12A
Text: BPW-8210 80W 24V DC-DC Open Frame Power Supply Input Range: 18~36VDC Industrial Power Supply 14.14 E 0.55 TRANSFORMER 8.38 6.78 24V 0.8 0.8 6.78 0V 15.24 3.1 1.5 DC-DC 3.3 3.8 0.4 14.44 Use #6-32 screw Protrusion limits 2.5mm x4 Features *Input Voltage: 18~36VDC
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BPW-8210
36VDC
24VDC
-20oC
273-12A
EN60950
EN55022
IEC-802,
DC24V
5273-12A
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A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer
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90F8548
SDP8600-001
95F5325
SDP8371-001
28H5849
28H5850
OPB933W55Z
08F2750
OPB963T55
08F2755
A 69157 scr
65k5
HEDS 5300
HCPL-900J-000E
HCPL 0636
DT 8210 IC
hcpl788
hcpl 1360
HEDS 8210
83K3
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Untitled
Abstract: No abstract text available
Text: Temic BPW82 S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package it self is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters X p = 800 nm .
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OCR Scan
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PDF
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BPW82
BPW82
870nm
15-Jul-96
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c1g smd
Abstract: bpv10nf TEMD2100
Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -
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CQY36N
CQY37N
TSUS4300
TSUS4400
CQX48A
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
c1g smd
bpv10nf
TEMD2100
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BPW 64 photo
Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package
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BPW16N
BPW17N
BPW85C
BPW96C
BPV11
BPV23FL
TESS5400
900nm)
BPW 64 photo
BPW 64 photo diode
77NB
D5100
77nA
BPW 56 photo
bpx43-5 smd
BPW 64
BPW 61
bpw 77na
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