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    HGTG32N60 Price and Stock

    Renesas Electronics Corporation HGTG32N60E2

    - Bulk (Alt: HGTG32N60E2)
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    Avnet Americas HGTG32N60E2 Bulk 4 Weeks 46
    • 1 -
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    • 100 $7.81
    • 1000 $7.59
    • 10000 $7.37
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    Harris Semiconductor HGTG32N60E2

    50A, 600V N-Channel IGBT '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTG32N60E2 2,969 1
    • 1 $8.02
    • 10 $8.02
    • 100 $7.54
    • 1000 $6.82
    • 10000 $6.82
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    HGTG32N60 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTG32N60E2 Harris Semiconductor 32A, 600V N-Channel IGBT Original PDF
    HGTG32N60E2 Intersil 32A, 600V N-Channel IGBT Original PDF

    HGTG32N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G32N60e2

    Abstract: HGTG32N60E2 AN7260 AN7254 hgtg32n60
    Text: HGTG32N60E2 S E M I C O N D U C T O R 32A, 600V N-Channel IGBT April 1995 Features Package • 32A, 600V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 600ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		PDF HGTG32N60E2 O-247 600ns 150oC. 1-800-4-HARRIS G32N60e2 HGTG32N60E2 AN7260 AN7254 hgtg32n60

    G32N60E2

    Abstract: AN7254 AN7260 HGTG32N60E2
    Text: HGTG32N60E2 32A, 600V N-Channel IGBT April 1995 Features Package • 32A, 600V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 600ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance • Low Conduction Loss Description


    Original     		PDF HGTG32N60E2 O-247 600ns 150oC. G32N60E2 AN7254 AN7260 HGTG32N60E2

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT

    Untitled

    Abstract: No abstract text available
    Text: HG TG32N60E2 & 32A, 600V N-Channel IGBT D ecember 1993 Features Package • 32 Amp, 600 Volt JEDEC STYLE TO-247 TOP VIEW • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss COLLECTOR BOTTOM SIDE METAL '


    OCR Scan     		PDF TG32N60E2 O-247 600ns

    AL-370-134

    Abstract: No abstract text available
    Text: HARRIS SEHICOND SECTOR bûE D 4 3 0 2 27 1 0 0 5 0 0 5 7 Q3b HAS HGT1E50N60E2HB 600V/50A IGBT and Diode Half Bridge Module December 1993 Package Features • Latch Free Operation • Typical Fall Time - 400ns • High Input Impedance • Low Conduction Loss


    OCR Scan     		PDF HGT1E50N60E2HB 00V/50A 400ns HGT1E50N60E2HB HGTG32N60E2) AL-370-134) AL-370-134

    Untitled

    Abstract: No abstract text available
    Text: ! ä s H G T G 3 2 N 6 E 2 32A, 600V N-Channel IGBT April 1995 Package Features • 32A ,600V J E D E C S T Y L E T O -2 4 7 • Latch Free Operation • Typical Fall Time - 600ns • High Input Im pedance • Low C onduction Loss Description The IGBT is a M OS gated high voltage switching device com bin­


    OCR Scan     		PDF 600ns

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40

    G32N60E2

    Abstract: No abstract text available
    Text: HG TG32N60E2 Semiconductor 32A, 600V N-Channel IGBT A pril 1995 Package Features • 32A, 600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss Description The IGBT is a M OS gated high voltage switching device com bin­


    OCR Scan     		PDF TG32N60E2 O-247 600ns G32N60E2