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    Rochester Electronics LLC HGTG32N60E2

    IGBT 600V 50A TO-247
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    DigiKey HGTG32N60E2 Bulk 2,969 38
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    Harris Semiconductor HGTG32N60E2

    50A, 600V N-Channel IGBT '
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    Rochester Electronics HGTG32N60E2 2,969 1
    • 1 $7.64
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    Philips Semiconductors G32N60E2

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    Chip 1 Exchange G32N60E2 14
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    G32N60E2 Datasheets Context Search

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    G32N60e2

    Abstract: HGTG32N60E2 AN7260 AN7254 hgtg32n60
    Text: G32N60E2 S E M I C O N D U C T O R 32A, 600V N-Channel IGBT April 1995 Features Package • 32A, 600V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 600ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		HGTG32N60E2 O-247 600ns 150oC. 1-800-4-HARRIS G32N60e2 HGTG32N60E2 AN7260 AN7254 hgtg32n60 PDF

    G32N60E2

    Abstract: AN7254 AN7260 HGTG32N60E2
    Text: G32N60E2 32A, 600V N-Channel IGBT April 1995 Features Package • 32A, 600V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 600ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance • Low Conduction Loss Description


    Original     		HGTG32N60E2 O-247 600ns 150oC. G32N60E2 AN7254 AN7260 HGTG32N60E2 PDF

    G32N60E2

    Abstract: No abstract text available
    Text: HG G32N60E2 Semiconductor 32A, 600V N-Channel IGBT A pril 1995 Package Features • 32A, 600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss Description The IGBT is a M OS gated high voltage switching device com bin­


    OCR Scan     		TG32N60E2 O-247 600ns G32N60E2 PDF