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    HGTD7N60C3S9A Search Results

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    HGTD7N60C3S9A Price and Stock

    onsemi HGTD7N60C3S9A

    IGBT 600V 14A TO252AA
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    DigiKey HGTD7N60C3S9A Cut Tape 1,951 1
    • 1 $2.66
    • 10 $1.719
    • 100 $1.1796
    • 1000 $0.87403
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    HGTD7N60C3S9A Reel
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    HGTD7N60C3S9A Digi-Reel 1
    • 1 $2.66
    • 10 $1.719
    • 100 $1.1796
    • 1000 $0.87403
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    Avnet Americas HGTD7N60C3S9A Reel 4 Weeks 297
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    Rochester Electronics HGTD7N60C3S9A 5,000 1
    • 1 $1.23
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    • 100 $1.16
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    Rochester Electronics LLC HGTD7N60C3S9A

    INSULATED GATE BIPOLAR TRANSISTO
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    DigiKey HGTD7N60C3S9A Bulk 249 249
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    Fairchild Semiconductor Corporation HGTD7N60C3S9A

    Insulated Gate Bipolar Transistor, 14A, 600V, N-Channel, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTD7N60C3S9A 249 1
    • 1 $1.23
    • 10 $1.23
    • 100 $1.16
    • 1000 $1.05
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    HGTD7N60C3S9A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HGTD7N60C3S9A Fairchild Semiconductor 14 A, 600 V, UFS N-Channel IGBT Original PDF
    HGTD7N60C3S9A Intersil 14A, 600V, UFS Series N-Channel IGBTs Scan PDF

    HGTD7N60C3S9A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G7N60C3

    Abstract: g7n60c HGTD7N60C3S9A HGTD7N60C3S HGTP7N60C3 LD26 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original
    PDF HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3 g7n60c HGTD7N60C3S9A LD26 RHRD660

    G7N60C3

    Abstract: G7N60 g7n60c HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original
    PDF HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3 G7N60 g7n60c HGTD7N60C3S9A RHRD660

    G7N60C3

    Abstract: No abstract text available
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original
    PDF HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60C3

    g7n60c

    Abstract: G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
    Text: HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging • 14A, 600V at TC = +25oC • • • • JEDEC TO-220AB EMITTER 600V Switching SOA Capability Typical Fall Time - 140ns at TJ = +150oC


    Original
    PDF HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 O-220AB 140ns 150oC O-251AA HGTD7N60C3S HGTP7N60C3 g7n60c G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S9A RHRD660

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original
    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    G7N60

    Abstract: G7N60C3 G7N60C HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original
    PDF HGTD7N60C3S, HGTP7N60C3 HGTD7N60C3S HGTP7N60C3 150oC. G7N60 G7N60C3 G7N60C HGTD7N60C3S9A LD26 RHRD660

    g7n60c

    Abstract: G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
    Text: HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs January 1997 Features Packaging • 14A, 600V at TC = 25oC • • • • JEDEC TO-220AB EMITTER 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC


    Original
    PDF HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 O-220AB 140ns 150oC O-251AA HGTD7N60C3S HGTP7N60C3 g7n60c G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S9A RHRD660

    Untitled

    Abstract: No abstract text available
    Text: HAFRFRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs January 1997 Packaging Features j e d e c t o - 22oab • 14A, 600V at Tc = 25°C • 600V Switching SOA Capability • Typical Fall T i m e . 140ns at T j = 150°C


    OCR Scan
    PDF HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 22oab 140ns HGTD7N60C3S HGTP7N60C3

    G7N60C3

    Abstract: g7n60c G7N60 TA49115 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660
    Text: HGTD7N60C3S, HGTP7N60C3 in t e r r ii J a n u a ry . m i D ata S h eet 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan
    PDF HGTD7N60C3S HGTP7N60C3 TA49115. HGTD7N60C3S, HGTP7N60C3 G7N60C3 g7n60c G7N60 TA49115 HGTD7N60C3S9A LD26 RHRD660