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    HGTD3N60C3S9A Search Results

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    HGTD3N60C3S9A Price and Stock

    onsemi HGTD3N60C3S9A

    IGBT 600V 6A 33W TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTD3N60C3S9A Reel 2,500
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    • 10000 $0.725
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    Rochester Electronics LLC HGTD3N60C3S9A

    N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTD3N60C3S9A Bulk 701
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    • 1000 $0.43
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    Fairchild Semiconductor Corporation HGTD3N60C3S9A

    Insulated Gate Bipolar Transistor, 6A, 600V, N-Channel, TO-252AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTD3N60C3S9A 8,284 1
    • 1 $0.4117
    • 10 $0.4117
    • 100 $0.387
    • 1000 $0.3499
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    HGTD3N60C3S9A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTD3N60C3S9A Fairchild Semiconductor 6 A, 600 V, UFS N-Channel IGBT Original PDF
    HGTD3N60C3S9A Intersil 6A, 600V, UFS Series N-Channel IGBTs Scan PDF

    HGTD3N60C3S9A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HGTD3N60C3S9A

    Abstract: HGTD3N60C3 HGTD3N60C3S LD26 RHRD460
    Text: HGTD3N60C3, HGTD3N60C3S S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBTs June 1997 Features Description • 6A, 600V at TC = 25oC The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original
    HGTD3N60C3, HGTD3N60C3S HGTD3N60C3 HGTD3N60C3S 150oC. 130ns 150oC 1-800-4-HARRIS HGTD3N60C3S9A LD26 RHRD460 PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original
    UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    G3N60C

    Abstract: ns802 HGTD3N60C3S HGTD3N60C3S9A HGTP3N60C3 LD26 RHRD460 TB334 N-Channel IGBT
    Text: HGTD3N60C3S, HGTP3N60C3 Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original
    HGTD3N60C3S, HGTP3N60C3 HGTD3N60C3S HGTP3N60C3 150oC. G3N60C ns802 HGTD3N60C3S9A LD26 RHRD460 TB334 N-Channel IGBT PDF

    ns802

    Abstract: HGTD3N60C3S HGTD3N60C3S9A HGTP3N60C3 RHRD460 TB334 transistor TO-220AB
    Text: HGTD3N60C3S, HGTP3N60C3 Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original
    HGTD3N60C3S, HGTP3N60C3 HGTD3N60C3S HGTP3N60C3 150oC. ns802 HGTD3N60C3S9A RHRD460 TB334 transistor TO-220AB PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original
    1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original
    TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd PDF

    G3N60C

    Abstract: HGTD3N60C3S HGTD3N60C3S9A HGTP3N60C3 LD26 RHRD460 TB334 ns802
    Text: HGTD3N60C3S, HGTP3N60C3 Data Sheet January 2000 File Number 4139.5 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original
    HGTD3N60C3S, HGTP3N60C3 HGTD3N60C3S HGTP3N60C3 150oC. G3N60C HGTD3N60C3S9A LD26 RHRD460 TB334 ns802 PDF

    HGTD3N60C3

    Abstract: HGTD3N60C3S HGTD3N60C3S9A LD26 RHRD460 G3N60C
    Text: HGTD3N60C3, HGTD3N60C3S S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT June 1996 Features • • • • • Packaging 6A, 600V at TC = +25oC 600V Switching SOA Capability Typical Fall Time - 130ns at TJ = +150oC Short Circuit Rating Low Conduction Loss


    Original
    HGTD3N60C3, HGTD3N60C3S 130ns 150oC O-251AA HGTD3N60C3 HGTD3N60C3S 150oC. O-252AA 1-800-4-HARRIS HGTD3N60C3S9A LD26 RHRD460 G3N60C PDF

    EM- 546 motor

    Abstract: G3N60C
    Text: HGTD3N60C3, HGTD3N60C3S HARRIS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBTs June 1997 Features Description • 6A, 600V at Tc = 25°C The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of


    OCR Scan
    HGTD3N60C3, HGTD3N60C3S HGTD3N60C3 HGTD3N60C3S TA49113. 1-800-4-HARR EM- 546 motor G3N60C PDF