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HGT1S20N60B3S Price and Stock

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Rochester Electronics LLC HGT1S20N60B3S 40A, 600V, UFS N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGT1S20N60B3S	Bulk			100	1 - 10 - 100 $3.02 1000 $3.02 10000 $3.02	Buy Now
Harris Semiconductor HGT1S20N60B3S 40A, 600V, UFS N-Channel IGBT '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGT1S20N60B3S		635		1	1 $2.9 10 $2.9 100 $2.73 1000 $2.47 10000 $2.47	Buy Now

HGT1S20N60B3S Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HGT1S20N60B3S		Fairchild Semiconductor	40A, 600V, UFS N-Channel IGBT		Original	PDF
HGT1S20N60B3S		Harris Semiconductor	600V / 1200V UFS Series IGBTs		Original	PDF
HGT1S20N60B3S		Intersil	40A, 600V, UFS Series N-Channel IGBTs		Original	PDF
HGT1S20N60B3S		Intersil	40A, 600V, UFS Series N-Channel lGBTs		Scan	PDF
HGT1S20N60B3S9A		Fairchild Semiconductor	40A, 600V, UFS N-Channel IGBT		Original	PDF
HGT1S20N60B3S9A		Intersil	40A, 600V, UFS Series N-Channel lGBTs		Scan	PDF

HGT1S20N60B3S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HG20N60B3 Abstract: G20N60B3 hG20N60 HGT1S20N60B3S9A hg20n60b3 equivalent g20n60 HGTG20N60B3 MOSFET 40A 600V HGT1S20N60B3S HGTP20N60B3 Text: HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs	Original	PDF	HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. HG20N60B3 G20N60B3 hG20N60 HGT1S20N60B3S9A hg20n60b3 equivalent g20n60 MOSFET 40A 600V HGT1S20N60B3S
HGTG20N60B3 Abstract: HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 G20N60B g20n60 hg*20n60 hg20n Text: HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs	Original	PDF	HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 G20N60B g20n60 hg*20n60 hg20n
HG20N60B3 Abstract: hG20N60 hg20n60b3 equivalent g20n60b3 HG20N hg*20n60 TA49050 g20n60 MOSFET 40A 600V HGTG20N60B3 Text: HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs	Original	PDF	HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent g20n60b3 HG20N hg*20n60 TA49050 g20n60 MOSFET 40A 600V
P channel 600v 20a IGBT Abstract: hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3 Text: HGTG20N60C3R HGTG20N60C3DR 2.3V TBD µJ HGTG30N60C3R HGTG30N60C3DR 2.3V TBD µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ	Original	PDF	HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG30N60C3R P channel 600v 20a IGBT hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3
HGTP7N60B3D Abstract: 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S Text: 2-3 HGTG20N60C3R HGTG20N60C3DR 2.3V 3000µJ HGTG27N60C3R HGTG27N60C3DR 2.3V 2000µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ	Original	PDF	HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG27N60C3R HGTP7N60B3D 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S
mosfet 1200V 40A Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S Text: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA	Original	PDF	LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
HG20N60B3 Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B Text: interrii HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs	OCR Scan	PDF	HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d G20N60B
TO-263 Abstract: TO263 POWER TRANSISTORS 600v HGT1S20N35G3VLS Text: INSULATED GATE BIPOLAR T R A N S I S T O R S The U FS SE R IE S of IGBTs Insulated specified in surface-mounted packages variety of applications requiring high Gate Bipolar Transistors is available in ranging from TO-252AA to TO-263AB. power control. 600V and 1200V ratings and may be	OCR Scan	PDF	O-252AA O-263AB. O-263 O-252 TO-263 TO263 POWER TRANSISTORS 600v HGT1S20N35G3VLS