Untitled
Abstract: No abstract text available
Text: VS-HFA08TB60PbF, VS-HFA08TB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47
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VS-HFA08TB60PbF,
VS-HFA08TB60-N3
2002/95/EC
JEDEC-JESD47
O-220AC
O-220AC
VS-HFA08TB60.
2011/65/EU
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB60PbF, VS-HFA08TB60-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47
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Original
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VS-HFA08TB60PbF,
VS-HFA08TB60-N3
2002/95/EC
JEDEC-JESD47
O-220AC
VS-HFA08TB60.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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HFA08TB60
Abstract: IRFP250
Text: Bulletin PD -2.341 rev. A 11/00 HFA08TB60 Ultrafast, Soft Recovery Diode HEXFRED TM • • • • • VR = 600V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.4V 4 IF(AV) = 8.0A
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HFA08TB60
HFA08TB60
IRFP250
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Untitled
Abstract: No abstract text available
Text: HFA08TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA08TB60
O-220AC
HFA08TB60
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -2.341 rev. A 11/00 HFA08TB60 Ultrafast, Soft Recovery Diode HEXFRED TM • • • • • VR = 600V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.4V 4 IF(AV) = 8.0A
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HFA08TB60
HFA08TB60
08-Mar-07
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HFA08TB60
Abstract: IRFP250
Text: HFA08TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level
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HFA08TB60
HFA08TB60
18-Jul-08
IRFP250
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HFA08TB60
Abstract: IRFP250
Text: PD -2.341 HFA08TB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA08TB60
HFA08TB60
IRFP250
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HFA08TB60
Abstract: ULTRAFAST RECTIFIER 16A 600V vf 1.7 IRFP250
Text: Bulletin PD -2.341 rev. A 11/00 HFA08TB60 Ultrafast, Soft Recovery Diode HEXFRED TM • • • • • VR = 600V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 1.4V 4 IF(AV) = 8.0A
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HFA08TB60
HFA08TB60
12-Mar-07
ULTRAFAST RECTIFIER 16A 600V vf 1.7
IRFP250
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Untitled
Abstract: No abstract text available
Text: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free
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HFA08TB60PbF
O-220AC
HFA08TB60
12-Mar-07
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transistor tip 1050
Abstract: smd transistor B1 TRANSISTOR SMD 2X y EIA-481A HFA08TB60 SMD-220 SMD TRANSISTOR MARKING l4 D9919
Text: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free
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HFA08TB60PbF
O-220AC
HFA08TB60
EIA-481A
D-257
D-991
transistor tip 1050
smd transistor B1
TRANSISTOR SMD 2X y
SMD-220
SMD TRANSISTOR MARKING l4
D9919
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HFA08TB60
Abstract: IRFP250
Text: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free
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Original
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HFA08TB60PbF
O-220AC
HFA08TB60
11-Mar-11
IRFP250
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HFA08TB60
Abstract: IRFP250
Text: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free
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HFA08TB60PbF
O-220AC
HFA08TB60
18-Jul-08
IRFP250
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Untitled
Abstract: No abstract text available
Text: HFA08TB60PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free
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HFA08TB60PbF
O-220AC
HFA08TB60
12-Mar-07
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a06t
Abstract: hfa08tb60pbf B120 HFA08TB60 IRFP250
Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation
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PD-95737
HFA08TB60PbF
HFA08TB60
HFA06T
a06t
hfa08tb60pbf
B120
IRFP250
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a06t
Abstract: hfa08tb60pbf
Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation
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PD-95737
HFA08TB60PbF
HFA08TB60
12-Mar-07
a06t
hfa08tb60pbf
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BUP314
Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for
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O-220
O-218
BUP314
BUP307
igbt types
siemens bup314
BUP401
BUZ334
BUZ MOSFET
MOSFET welding INVERTER
334 mosfet
flyback inverter welding
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IN1190A diode
Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Text: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1N1183
IN1190
1N1183A
IN1190A
1N1199A
1N1206A
1N2054
1N2068
1N3085
-1N3092
IN1190A diode
an 80771
hfa30pa60
SCR gate drive circuit
A6F diode
HFA120FA60
HF50A060
DT93-1
HFA16PB120
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Untitled
Abstract: No abstract text available
Text: VS-HFA08TB60PbF Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS •
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VS-HFA08TB60PbF
2002/95/EC
VS-HFA08TB60PbF
11-Mar-11
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HFA08TB60
Abstract: HFA08TB60 DIODE
Text: PD -2.341 International lO R Rectifier HFA08TB60 Ultrafast, Soft Recovery Diode HEXFRED Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions Benefits
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OCR Scan
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HFA08TB60
40A/ps
HFA08TB60
HFA08TB60 DIODE
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HFA06TB60
Abstract: HFA08TB60 diode hfa08tb60 revers characteristic transistor revers characteristic ir 908c SL-2341 32
Text: PD-2.341 International \1QRIRectifier HEXFRED Provisional Data Sheet HFA08TB60 ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics Features; Units Vr V r rm 600 V If a v 6 A trr (typ) 18 ns On- (typ) 65 Jrrm difrec)M/dt (tvoi
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OCR Scan
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HFA08TB60
HFA06TB60
00A/fiS
diode hfa08tb60
revers characteristic
transistor revers characteristic
ir 908c
SL-2341 32
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lrr3
Abstract: No abstract text available
Text: P D -2 .3 4 1 International US Rectifier HEXFRED Provisional Data Sheet HFA08TB60 600V, 8A ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Units Characteristics Vr VRRM 600 V IF AV 8 A trr (typ) 18 ns Qrr (typ) 65 nC IRRM 5 A di(rec)M/dt (typ)
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OCR Scan
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PDF
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HFA08TB60
472D403
1321V
D-S380
10C71
lrr3
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Untitled
Abstract: No abstract text available
Text: P D -2.341 International Rectifier I R HFA HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • 08 T B 60 VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low I r r m Very L ow Q rr Guaranteed Avalanche Specified at Operating Conditions
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OCR Scan
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20337
Abstract: SMD e9
Text: 111! n a n I n t e r n a t i o n a l R e c t if ie r UltraFast Recovery Diodes Put Number VRWM V 10BF10 10BF20 10BF40 10BF60 10BF80 100 200 400 600 800 1 1 1 1 1 30BF10 30BF20 30BF40 30BF60 30BF80 100 200 400 600 800 3 3 3 3 3 (6) IfSMOiOHi (A) VFM lF(AV)
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OCR Scan
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10BF10
10BF20
10BF40
10BF60
10BF80
30BF10
30BF20
30BF40
30BF60
30BF80
20337
SMD e9
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HFA16TA120C
Abstract: HF30A060ACD HFA16PB120 IR210 ir485 HF10A060ACD
Text: ¡Ill usas I n t e r n a t io n a l R e c t if ie r Die Tables and Outlines HEXFRED Die w > M i Part Number Die{2) Part Number Die Size N/A 6 HF06A060ACB Length/Side in.) mm "C x 0" (in.) mm Anode MetaKzation Quantity Tray (0.066x0.066)1.68x1.68 (0.037x0.037) 0.94x0.94
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HF06A060ACB
066x0
037x0
HFA04TB60
HFA08TA60C
HF10A060ACB
HF10A060ACD
090X0
062x0
HFA08PB60
HFA16TA120C
HF30A060ACD
HFA16PB120
IR210
ir485
HF10A060ACD
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