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    HF03D060ACE Search Results

    HF03D060ACE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HF03D060ACE International Rectifier Hexfred Die in Wafer Form Original PDF

    HF03D060ACE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HF03D060ACE

    Abstract: IRGS5B60KD
    Text: PD - 94411 HF03D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance


    Original     		PDF HF03D060ACE 125mm IRGS5B60KD IRGS5B60K HF03D060ACE IRGS5B60KD

    hexfred gen3

    Abstract: HF03D060ACE
    Text: PD - 94411 HF03D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance


    Original     		PDF HF03D060ACE 125mm IRGS5B60KD 12-Mar-07 hexfred gen3 HF03D060ACE

    Untitled

    Abstract: No abstract text available
    Text: PD - 95645 IRGB8B60KPbF IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.


    Original     		PDF O-220 IRGB8B60KPbF IRGS8B60K IRGSL8B60K O-220AB IRGS8B60K O-262

    irg 250

    Abstract: C-150 IRF1010 IRF530S IRGB6B60K IRGS6B60K IRGSL6B60K IRL3103L transistor* igbt 70A 300 V
    Text: PD - 94575 IRGB6B60K IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. IC = 7.0A, TC=100°C


    Original     		PDF IRGB6B60K IRGS6B60K IRGSL6B60K O-220AB O-262 O-220AB AN-994. irg 250 C-150 IRF1010 IRF530S IRGB6B60K IRGS6B60K IRGSL6B60K IRL3103L transistor* igbt 70A 300 V

    Untitled

    Abstract: No abstract text available
    Text: PD - 94575A IRGB6B60K IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. IC = 7.0A, TC=100°C


    Original     		PDF 4575A IRGB6B60K IRGS6B60K IRGSL6B60K O-220AB O-262 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF O-220AB IRGB6B60K IRGS6B60K O-262 IRGSL6B60K AN-994.

    TRANSISTOR marking ar code

    Abstract: AN-994 C-150 HF03D060ACE IRGB6B60K IRGS6B60K IRGSL6B60K
    Text: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF O-220AB IRGB6B60K IRGS6B60K O-262 IRGSL6B60K O-220AB TRANSISTOR marking ar code AN-994 C-150 HF03D060ACE IRGB6B60K IRGS6B60K IRGSL6B60K

    TO-220AB transistor package

    Abstract: C-150 IRGB8B60K IRGS8B60K IRGSL8B60K
    Text: PD - 94545B IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 8.0A, TC=100°C


    Original     		PDF 94545B IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB TO-220AB transistor package C-150 IRGB8B60K IRGS8B60K IRGSL8B60K

    C-150

    Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


    Original     		PDF 94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994. C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K

    AN-994

    Abstract: C-150 HF03D060ACE
    Text: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • VCES = 600V C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB O-262 IRGB8B60KPbF IRGS8B60KPbF AN-994. AN-994 C-150 HF03D060ACE

    AN-994

    Abstract: C-150 IRGS8B60K IRGSL8B60K
    Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.


    Original     		PDF 5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K AN-994. AN-994 C-150 IRGS8B60K IRGSL8B60K

    irg 250

    Abstract: IRGSL6B60K C-150 IRF530S IRGB6B60K IRGS6B60K
    Text: PD - 94575A IRGB6B60K IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. IC = 7.0A, TC=100°C


    Original     		PDF 4575A IRGB6B60K IRGS6B60K IRGSL6B60K O-220AB O-262 Continuo-10 irg 250 IRGSL6B60K C-150 IRF530S IRGB6B60K IRGS6B60K

    Untitled

    Abstract: No abstract text available
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


    Original     		PDF 94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994.

    irgb60

    Abstract: No abstract text available
    Text: PD - 95644 IRGB6B60KPbF IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.


    Original     		PDF O-220 IRGB6B60KPbF IRGS6B60K IRGSL6B60K O-220AB IRGS6B60K O-262 irgb60

    Untitled

    Abstract: No abstract text available
    Text: PD - 94545 IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB AN-994.

    AN-994

    Abstract: C-150 HF03D060ACE IRGB6B60K IRGS6B60K IRGSL6B60K
    Text: PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.


    Original     		PDF 5644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF O-220AB IRGB6B60K IRGS6B60K O-262 IRGSL6B60K Collector-to-Em-10 AN-994 C-150 HF03D060ACE IRGB6B60K IRGS6B60K IRGSL6B60K

    AN-994

    Abstract: C-150 IRGS8B60K IRGSL8B60K Mbl transistor
    Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.


    Original     		PDF 5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K O-220AB AN-994 C-150 IRGS8B60K IRGSL8B60K Mbl transistor

    Untitled

    Abstract: No abstract text available
    Text: PD - 94545A IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4545A IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB

    C-150

    Abstract: IRF530S IRGB6B60K IRGS6B60K IRGSL6B60K
    Text: PD - 94575A IRGB6B60K IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. IC = 7.0A, TC=100°C


    Original     		PDF 4575A IRGB6B60K IRGS6B60K IRGSL6B60K O-220AB O-262 O-220AB C-150 IRF530S IRGB6B60K IRGS6B60K IRGSL6B60K

    Untitled

    Abstract: No abstract text available
    Text: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.


    Original     		PDF 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB O-262 IRGB8B60KPbF IRGS8B60KPbF AN-994.