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    Abstract: No abstract text available
    Text: PD - 95644 IRGB6B60KPbF IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.


    Original
    PDF O-220 IRGB6B60KPbF IRGS6B60K IRGSL6B60K O-220AB IRGS6B60K O-262 irgb60