CFH120
Abstract: CFH120-06 CFH120-08 CFH120-10 ts 4302 HEMT marking P
Text: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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CFH120
CFH120-06
Q62705-K0671
CFH120-08
Q62705-K0603
CFH120-10
Q62705-K0604
CFH120
CFH120-06
CFH120-08
CFH120-10
ts 4302
HEMT marking P
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MAX 8985
Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
Text: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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CFH120
CFH120-08
Q62705-K0603
CFH120-10
Q62705-K0604
MAX 8985
pseudomorphic HEMT
ta 7176 datasheet
8772 P
CFH120
CFH120-08
CFH120-10
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GS 9521
Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
Text: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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CFH120
CFH120-08
CFH120-10
GS 9521
CFH120
CFH120-08
CFH120-10
1507 0745
HEMT marking K
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5703 infineon
Abstract: pseudomorphic HEMT CFH120-08 CFH120 CFH120-06 CFH120-10 4511 gm
Text: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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CFH120
CFH120-06
Q62705-K0671
CFH120-08
Q62705-K0603
CFH120-10
Q62705-K0604
5703 infineon
pseudomorphic HEMT
CFH120-08
CFH120
CFH120-06
CFH120-10
4511 gm
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pseudomorphic HEMT
Abstract: CFH120-08 HEMT marking P
Text: CFH120-08 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers
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CFH120-08
Q62705-K0603
pseudomorphic HEMT
CFH120-08
HEMT marking P
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low noise hemt
Abstract: 35 micro-X Package MARKING CODE Q igp 0830 CFY66 CFY66-08 CFY66-08P CFY66-10 CFY66-10P CFY67 HEMT marking P
Text: CFY66 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AlGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz
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CFY66
CFY67)
CFY66-08
CFY66-0assemblies.
QS9000
low noise hemt
35 micro-X Package MARKING CODE Q
igp 0830
CFY66
CFY66-08
CFY66-08P
CFY66-10
CFY66-10P
CFY67
HEMT marking P
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Untitled
Abstract: No abstract text available
Text: MECKULNA1 Ku-Band GaN HEMT Low Noise Amplifier VG1 VD1 VG2 VD2 Main Features VG3 VD3 RFin RFout Product Description MECKULNA1 is a 0.25µm GaN HEMT based Low Noise Amplifier designed by MEC for Ku-Band applications. 0.25µm GaN HEMT Technology 12– 16 GHz full performance Frequency
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Untitled
Abstract: No abstract text available
Text: CFY66 HiRel K-Band GaAs Super Low Noise HEMT • • HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz
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CFY66
CFY67)
CFY66-08
CFY66-08P
CFY66-10
CFY66-10P
CFY66-nnl:
QS9000
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EGN26C030MK
Abstract: No abstract text available
Text: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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60GHz
EGN26C030MK
-j100
EGN26C030MK
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Untitled
Abstract: No abstract text available
Text: EGN35C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 16.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C030MK
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Untitled
Abstract: No abstract text available
Text: EGN21C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 19dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C030MK
14GHz
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EGN35C030MK
Abstract: JESD22-A114 1581-4 2S110
Text: EGN35C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 16.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C030MK
EGN35C030MK
JESD22-A114
1581-4
2S110
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CFY66
Abstract: CFY66-08 CFY66-08P CFY66-10 CFY66-10P CFY67 HEMT marking P Siemens Microwave 35 micro-X Package MARKING CODE Q 35 micro-X Package MARKING CODE 0
Text: CFY66 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • 4 3 1 2 Conventional AlGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz
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CFY66
CFY67)
CFY66-08
CFY66ses
QS9000
CFY66
CFY66-08
CFY66-08P
CFY66-10
CFY66-10P
CFY67
HEMT marking P
Siemens Microwave
35 micro-X Package MARKING CODE Q
35 micro-X Package MARKING CODE 0
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Untitled
Abstract: No abstract text available
Text: EGN21C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C020MK
-j100
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Untitled
Abstract: No abstract text available
Text: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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60GHz
EGN26C020MK
-j100
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Untitled
Abstract: No abstract text available
Text: EGN35C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 16.5dB(typ.) @ f=3.50GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C030MK
50GHz
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Untitled
Abstract: No abstract text available
Text: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 43.5dBm typ. @ Psat Power Gain : 18dB(typ.) @ f=2.60GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C020MK
60GHz
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Untitled
Abstract: No abstract text available
Text: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications
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CGHV27030S
CGHV27030S
CGHV27
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EGN26C030MK
Abstract: 60Ghz JESD22-A114
Text: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C030MK
60GHz
EGN26C030MK
60Ghz
JESD22-A114
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egn21c020mk
Abstract: MTTF JESD22-A114 EGN21
Text: EGN21C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C020MK
14GHz
egn21c020mk
MTTF
JESD22-A114
EGN21
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GaN hemt
Abstract: No abstract text available
Text: Mitsubishi Semiconductors < GaN HEMT > MGF0840G 10 W GaN HEMT [ non-matched ] DESCRIPTION The MGF0840G, GaN HEMT with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. OUTLINE DRAWING Unit : m illim eters FEATURES • High voltage operation : VDS = 47 V
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MGF0840G
MGF0840G,
GaN hemt
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Untitled
Abstract: No abstract text available
Text: Mitsubishi Semiconductors < GaN HEMT > MGF0843G 20 W GaN HEMT [ non-matched ] DESCRIPTION The MGF0843G, GaN HEMT with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. OUTLINE DRAWING Unit : m illim eters FEATURES • High voltage operation : VDS = 47 V
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MGF0843G
MGF0843G,
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Untitled
Abstract: No abstract text available
Text: S IE M E N S CFY66 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers •
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OCR Scan
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PDF
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CFY66
CFY67)
CFY66-08
QS9000
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HEMT marking P
Abstract: No abstract text available
Text: S IE M E N S CFY66 H/Re/K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers •
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OCR Scan
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PDF
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CFY66
CFY67)
CFY66-08
CFY66-08P
CFY66-10
CFY66-10P
CFY66-nnl
QS9000
HEMT marking P
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