Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 2SE D B PBYR1035 PBYR1040 PBYR1045 hbS3T31 0023137 4 B T-6Z-I7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum -barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended fo r use in
|
OCR Scan
|
PDF
|
PBYR1035
PBYR1040
PBYR1045
hbS3T31
tifcjS3T31
T-03-17
|
N 407 Diode
Abstract: Philips MBB BAV74
Text: • hbS3T31 N AMER 00243b3 407 ■ PHILIPS/DISCRETE APX b7E BAV74 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The device consists o f tw o diodes in a m icrom iniature plastic envelope. The cathodes are commoned and the device is intended fo r high-speed switching in thick and thin -film circuits.
|
OCR Scan
|
PDF
|
hbS3T31
Q0243b3
BAV74
OT-23.
N 407 Diode
Philips MBB
BAV74
|
DD 127 D
Abstract: dd 127 dd 127 d D 304 x LTD202R-12 LTD221R-11 LTD222R-11 LTD225R-11 DD 127
Text: N AMER P H I L I P S / D I S C R E T E hbS3T31 GQltiHS7 7 • 2SE D Optoelectronic Devices LIQUID CRYSTAL DISPLAYS, STANDARD In order of character size (cont.) DISPLAY FORMAT s iff TYPE LTD202R-12 GLASS SIZE (mm) 27.9 X 30.4 CHARACTER SIZE (mm) 12.7 Z VIEWING
|
OCR Scan
|
PDF
|
LTD202R-12
LTD225R-11
LTD222R-11
LTD226R-11
LTD229R-12
LTD262R-12
DD 127 D
dd 127 dd 127 d
D 304 x
LTD221R-11
DD 127
|
Philips transistor k1
Abstract: BUK445-600B
Text: N AMER PH IL IPS/DISCRETE bTE D • hbS3T31 003D575 2ST « A P X Philips Semiconductors Product Specification PowerMOS transistor PINNING -S O T 1 86 PIN QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
|
OCR Scan
|
PDF
|
003D575
BUK445-600B
PINNING-SOT186
/V-12
Philips transistor k1
|
1N3913
Abstract: 1N3909 1N3910 1N3911 1N3912
Text: AMER PH ILI PS/DISCRE TE TOD D • hbS3T31 001054G S 1N3909 to 1N3913 X FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended fo r use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifier applications.
|
OCR Scan
|
PDF
|
001054G
1N3909
1N3913
1N3910
1N3911
1N3912
1N3913.
DD1D54S
1N3913
|
BUK445-600B
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • hbS3T31 003D575 Philips Semiconductors PowerMOS transistor PINNING -S O T 1 86 PIN BUK445-600B QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
|
OCR Scan
|
PDF
|
hbS3T31
BUK445-600B
-SOT186
BUK445-600B
|
BUZ83A
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE OLE D • PowerMOS transistor hbS3T31 DOlMbfii 4 ■ BUZ83A T - n - i i July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in
|
OCR Scan
|
PDF
|
BUZ83A
7Z8388S
bbS3T31
T-S9-11
BUZ83A
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE E5E D • hbS3T31 QQlbEHE 5 ■ Surface Mount Devices HIGH VOLTAGE TRANSISTORS cont. ’ TYPE PACKAGE -•.- RATINGS hFE •c V<iE(sat) " m ax « atlc% / ’ mA/mA ' ’ .*r. typmh2 PINOUT SEE SECTION Vt VCEO V V cB C ¥ mA 20 50
|
OCR Scan
|
PDF
|
hbS3T31
PZTA93
BSP16
BST16
OT-23
OT-89
T-223
OT-223
PMBTA92
|
BFR96 philips
Abstract: No abstract text available
Text: ^ 5 3 ^ 3 1 Philips Semiconductors 0 0 3 1 flfl7 b fll M APX Product specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as
|
OCR Scan
|
PDF
|
BFR96
BFR96/02
ON4487)
hbS3T31
BFR96 philips
|
equivalent transistor c 5888
Abstract: No abstract text available
Text: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency
|
OCR Scan
|
PDF
|
bbS3R31
BFS520
OT323
OT323
OT323.
equivalent transistor c 5888
|
Untitled
Abstract: No abstract text available
Text: • Philips Semiconductors ^ 5 3 ^ 3 1 0024101 IAPX Product specification N AMER PHILIPS/DISCRETE b7E D N-channel field-effect transistor 2N4416; 2N4416A QUICK REFERENCE DATA FEATURES SYMBOL • Low noise • Interchangeability of drain and source connections
|
OCR Scan
|
PDF
|
2N4416;
2N4416A
shN4416A
KMC166
2N4416
|
Untitled
Abstract: No abstract text available
Text: I N AMER PHILIPS/DISCRETE ObE D bbS3TBl QQlSbl11] T • "BCV71 BCV72 JV ~X-'XC\~\£\ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic envelope, intended for low level general purpose appli cations in thick and thin-film circuits.
|
OCR Scan
|
PDF
|
BCV71
BCV72
hbS3T31
|
Untitled
Abstract: No abstract text available
Text: BD840 BD842 BD844 _ J \ _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic TO-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839, BD841 and BD843.
|
OCR Scan
|
PDF
|
BD840
BD842
BD844
O-202
BD839,
BD841
BD843.
|
transistor IC BT 134
Abstract: No abstract text available
Text: 2SE D N AMER PHILIPS / D I S CR E T E bt.53131 005D3bS fl P o w e rM O S tra n s is to r B U K 444-450B T N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
|
OCR Scan
|
PDF
|
005D3bS
444-450B
hbS3T31
transistor IC BT 134
|
|
|
BYV26
Abstract: BYV26A BYV26B BYV26C BYV26D BYV26E BYV26F BYV26G diode BYV26E
Text: N AUER P H I L I P S / D I S C R E T E bbsa^ai b' i E D027D2b Philips Semiconductors • N o n -sn a p -o ff soft- recovery sw itch in g ch a racteristics • C a p a bility of absorb in g reverse tra n sie n t energy. BYV26 series Q U IC K R E FE R E N C E DATA
|
OCR Scan
|
PDF
|
D027DEb
BYV26
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
diode BYV26E
|
BSS38
Abstract: No abstract text available
Text: N AUER P H I L I P S / D I S C R E T E b'ìE D □□27Û53 fl44 BSS38 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope. It is prim arily intended fo r general purpose switching and as driver fo r numerical indicator tubes.
|
OCR Scan
|
PDF
|
BSS38
bb53ci31
BSS38
|
BLV37
Abstract: ferroxcube wideband hf choke 4312 020 36642 B34 transistor
Text: I I N AUER PHILIPS/DISCRETE b^E T> m btS3T31 □□STD2S 7TÛ BLV37 IAPX A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar e p ita xia l tran sisto r p rim a rily intended fo r use in V H F broadcast tran sm itte rs. Features • • • In te rn a lly m atched in p u t fo r w ideband ope ra tio n and high p ow er gain
|
OCR Scan
|
PDF
|
BLV37
OT179
BLV37
ferroxcube wideband hf choke
4312 020 36642
B34 transistor
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D • bb53T31 □01SE7ci 1 ■ RZB12050Y -r -5 3 -1 3 J PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor intended for use in a common-base, class-C narrowband amplifier operating under pulsed conditions.
|
OCR Scan
|
PDF
|
bb53T31
01SE7c
RZB12050Y
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 1^53^31 0020540 Q 2SE D B U K 456-1000A B U K 456-1000B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
|
OCR Scan
|
PDF
|
56-1000A
456-1000B
BUK456
-1000A
-1000B
bt53131
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE TOD D bbS3T31 0010540 5 1N3909 to 1N3913 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.
|
OCR Scan
|
PDF
|
bbS3T31
1N3909
1N3913
1N3910
1N3911
1N3912
1N3913.
1N3909
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb53T31 APX 0 0 3 2 4 CH bb? Product specification Hybrid integrated VHF/UHF w ideband amplifier OM2064 N AMER PHILIPS/DISCRETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for
|
OCR Scan
|
PDF
|
bb53T31
OM2064
MEA191
DD32SD4
DD32SDS
|
Untitled
Abstract: No abstract text available
Text: I I N A flE R P H IL IP S /D IS C R E T E 5SE D ^ 5 3 ^ 3 1 M A IN T E N A N C E T Y P E Q D 2577S 4 • BYW92 SERIES A 7 = 0 3 -1 *7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low
|
OCR Scan
|
PDF
|
2577S
BYW92
bhS3T31
T-03-19
|
Untitled
Abstract: No abstract text available
Text: 11 1^53=131 001=5713 0 • 25E D N AMER PHILIPS/DISCRETE BDT41;A BDT41B;C J T -3 3 -II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. The TIP41 series is an equivalent type. P-N-P complements are BDT42 series.
|
OCR Scan
|
PDF
|
BDT41
BDT41B
TIP41
BDT42
BDT41
BDT41A
hbS3T31
|
BUX46
Abstract: BUX46A N13e
Text: N AMER PHILIPS/DISCRETE 2SE » bbS3' i o a n o M s 7 i BUX46BUX46A T-33-J3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO -3 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.
|
OCR Scan
|
PDF
|
BUX46-BUX46A
T-33-J3
BUX46
BUX46A
BUX46A
N13e
|