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    HAT2168N Search Results

    HAT2168N Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    HAT2168N-EL-E Renesas Electronics Corporation N Channel MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
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    HAT2168N Price and Stock

    Renesas Electronics Corporation HAT2168N-EL-E

    POWER FIELD-EFFECT TRANSISTOR, 30A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HAT2168N-EL-E 990
    • 1 $1.8
    • 10 $1.8
    • 100 $1.8
    • 1000 $0.828
    • 10000 $0.828
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    HAT2168N Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HAT2168N Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : -; RDS (ON) typ. (ohm) @10V: 0.0063; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0091]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1780; toff ( us) typ: -; Package: LFPAK-i Original PDF
    HAT2168N-EL-E Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A LFPAKI Original PDF

    HAT2168N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    str z2062

    Abstract: diode renesas dr 25 diode fet N-Channel list of n channel fet Gate Drive Characteristics ID 10 LFPAK package Low Input Capacitance MOS FET Repeater
    Text: HAT2168N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 Jul.15.2004 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 6.3 mΩ typ. (at VGS = 10 V)


    Original     		PDF HAT2168N str z2062 diode renesas dr 25 diode fet N-Channel list of n channel fet Gate Drive Characteristics ID 10 LFPAK package Low Input Capacitance MOS FET Repeater

    HAT2168N

    Abstract: HAT2168N-EL-E
    Text: HAT2168N Silicon N Channel Power MOS FET Power Switching REJ03G1682-0200 Rev.2.00 May 27, 2008 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 6.3 mΩ typ. (at VGS = 10 V)


    Original     		PDF HAT2168N REJ03G1682-0200 PTSP0008DC-A HAT2168N HAT2168N-EL-E

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HAT2166N

    Abstract: LFPAK footprint Renesas HAT2165H HAT2165N HAT2166H HAT2168H HAT2168N HAT216*N
    Text: Renesas Technology Releases LFPAK -i Top-Surface-Radiation Type Package for Power MOSFETs as New Package Offering 40% Reduction in Mounted Thermal Resistance  Offering higher thermal radiation characteristics and larger current enabling reduction in size of server DC-DC power supplies, plus compatibility with SOP -8 


    Original     		PDF HAT2165N HAT2166N HAT2168N HAT2166N LFPAK footprint Renesas HAT2165H HAT2165N HAT2166H HAT2168H HAT2168N HAT216*N

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HAT1125H

    Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
    Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient


    Original     		PDF uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L

    HAT2168N

    Abstract: HAT2168N-EL-E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF