HAT1127H Search Results

HAT1127H Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
HAT1127H01-EL-E		Renesas Electronics Corporation	Pch Single Power Mosfet -30V -40A 4.5Mohm Lfpak
HAT1127H-EL-E		Renesas Electronics Corporation	Pch Single Power Mosfet -30V -40A 4.5Mohm Lfpak

HAT1127H Price and Stock

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Renesas Electronics Corporation HAT1127HWS-E MOSFET P-CH 30V 40A 5LFPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HAT1127HWS-E	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

HAT1127H Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HAT1127H		Renesas Technology	MOSFET, Switching; VDSS (V): -30; ID (A): -40; Pch : -; RDS (ON) typ. (ohm) @10V: 0.0036; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0053]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5600; toff ( us) typ: 43; Package: LFPAK		Original	PDF

HAT1127H Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HAT1127H Abstract: hat1127h-el-e P Channel Power MOS FET Power Switching hat1127hele Text: HAT1127H Silicon P Channel Power MOS FET Power Switching REJ03G1330-0500 Rev.5.00 Jan 20, 2006 Features • • • • Capable of –4.5 V gate drive Low drive current High density mounting Ultra Low on-resistance RDS on = 3.6 mΩ typ. (at VGS = –10 V)	Original	PDF	HAT1127H REJ03G1330-0500 PTZZ0005DA-A HAT1127H hat1127h-el-e P Channel Power MOS FET Power Switching hat1127hele
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
RTL8211E Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055 Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?	Original	PDF	ISL10 ISL11 RTL8211E ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
RTL8211E Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701 Text: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM	Original	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	PDF	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
isl9519 Abstract: smd zener diode mark J2 ISL9519HRTZ transistor SMD p04 p06 smd transistor smd z70 transistor SMD p12 transistor SMD p13 CF13 transistor TRANSISTOR C307 Text: Application Note 1570 ISL9519EVAL2Z Evaluation Board Setup Procedure Introduction What’s Inside The ISL9519 is a highly integrated battery charger controller for Li-ion/Li-ion polymer batteries with SMBus interface controlling system voltage, charge current and	Original	PDF	ISL9519EVAL2Z ISL9519 ISL9519EVAL1Z ISL9519EVAL1Z) AN1570 smd zener diode mark J2 ISL9519HRTZ transistor SMD p04 p06 smd transistor smd z70 transistor SMD p12 transistor SMD p13 CF13 transistor TRANSISTOR C307
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	PDF	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
SMD 47UF/SN74AHC138 Abstract: No abstract text available Text: Application Note 1826 Author: Richard Kroeger ISL9520EVAL1Z Evaluation Board Setup Procedure The ISL9520 is a highly integrated Narrow VDC regulator/battery charger controller for Li-ion/Li-ion polymer batteries. It has an SMBus interface and provides gate drive to	Original	PDF	ISL9520EVAL1Z ISL9520 AN1826 SMD 47UF/SN74AHC138
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original	PDF
M37512 Abstract: R2S20020 R2S20020SP HAT1127H smart battery system SMBus 32KHZ R2s200 M37512fc M61048FP Text: 智能锂电池保护电路板方案此锂电池保护板电路方案用于智能锂电池系统（Smart Battery System SBS），该电路采用Renesas最新推荐的方案和器件。 1主要器件 M37512 MCU 专为智能锂电池系统优化设计的微控制器。	Original	PDF	M37512 R2S20020 HAT1127H 32KHz/4MHz M37512FC M61048FP R2S20020SP 2M37512 M61048 M37512 R2S20020 R2S20020SP HAT1127H smart battery system SMBus 32KHZ R2s200 M37512fc
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	PDF	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
SMD 47UF/SN74AHC138 Abstract: No abstract text available Text: Application Note 1570 ISL9519TQFNEVAL2Z Evaluation Board Setup Procedure Introduction What’s Inside The ISL9519 is a highly integrated battery charger controller for Li-ion/Li-ion polymer batteries with SMBus interface controlling system voltage, charge current and input current limiting. The	Original	PDF	ISL9519TQFNEVAL2Z ISL9519 ISL9519EVAL1Z AN1570 SMD 47UF/SN74AHC138
rjh60f5 Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.	Original	PDF	REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK

R2J24020F Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114 Text: 2009.07 ルネサス電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体の炭素使用量を減らし地球の温暖化を防ぐことができます。電気は主に発電所で作られ、高電圧のACで送電されること	Original	PDF	RJJ01F0008-0201 R2J24020F R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114
HAT1125H Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient	Original	PDF	uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
hat1127 Abstract: HAT1127H Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF