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    HAT1093C Search Results

    HAT1093C Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    HAT1093C-EL-E Renesas Electronics Corporation Pch Single Power Mosfet -12V -3A 54Mohm Cmfpak6 Visit Renesas Electronics Corporation
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    HAT1093C Price and Stock

    Rochester Electronics LLC HAT1093C-EL-E

    HAT1093C - P-CHANNEL POWER MOSFE
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    DigiKey HAT1093C-EL-E Bulk 30,000 1,200
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    Renesas Electronics Corporation HAT1093C-EL-E

    HAT1093C - P-Channel Power MOSFET, 12V, 3A '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HAT1093C-EL-E 30,000 1
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    HAT1093C Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HAT1093C Renesas Technology MOSFET, Switching; VDSS (V): -12; ID (A): -3; Pch : -; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.041]; RDS (ON) typ. (ohm) @2.5V: 0.054; Ciss (pF) typ: 900; toff ( us) typ: -; Package: CMFPAK-6 Original PDF
    HAT1093C Renesas Technology Silicon P Channel MOS FET Power Switching Original PDF
    HAT1093C-EL-E Renesas Electronics America Integrated Circuits (ICs) - Embedded - Microcontrollers - MICROCONTROLLER Original PDF

    HAT1093C Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT1093C R07DS0605EJ0700 Rev.7.00 Mar 19, 2014 Silicon P Channel MOSFET Power Switching Features • Low on-resistance RDS on = 41 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V gate drive devices. • High density mounting


    Original     		PDF HAT1093C R07DS0605EJ0700 PWSF0006JA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT1093C R07DS0605EJ0600 Previous: REJ03G1230-0500 Rev.6.00 Jan 06, 2012 Silicon P Channel MOSFET Power Switching Features • Low on-resistance RDS(on) = 41 m typ. (at VGS = –4.5 V)  Low drive current.  1.8 V gate drive devices.


    Original     		PDF HAT1093C R07DS0605EJ0600 REJ03G1230-0500) PWSF0006JA-A

    HAT1093C-EL-E

    Abstract: HAT1093C
    Text: HAT1093C Silicon P Channel MOSFET Power Switching REJ03G1230-0500 Rev.5.00 Jan 26, 2006 Features • Low on-resistance RDS on = 41 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V gate drive devices. • High density mounting Outline RENESAS Package code: PWSF0006JA-A


    Original     		PDF HAT1093C REJ03G1230-0500 PWSF0006JA-A HAT1093C-EL-E HAT1093C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet HAT1093C R07DS0605EJ0600 Previous: REJ03G1230-0500 Rev.6.00 Jan 06, 2012 Silicon P Channel MOSFET Power Switching Features • Low on-resistance RDS(on) = 41 m typ. (at VGS = –4.5 V)  Low drive current.  1.8 V gate drive devices.


    Original     		PDF HAT1093C R07DS0605EJ0600 REJ03G1230-0500) PWSF0006JA-A

    HAT1093C

    Abstract: HAT1093C-EL-E
    Text: HAT1093C Silicon P Channel MOS FET Power Switching REJ03G1230-0400 Rev.4.00 Jun. 10, 2005 Features • Low on-resistance RDS on = 41 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V gate drive devices. • High density mounting Outline RENESAS Package code: PWSF0006JA-A


    Original     		PDF HAT1093C REJ03G1230-0400 PWSF0006JA-A tem-900 Unit2607 HAT1093C HAT1093C-EL-E

    HD64F7058F

    Abstract: hd64f7065f R5F72115 HD6417706BP 74LV1G HD64F7055S R5F72 SH7785 HD6417720BP 74LV1G08A
    Text: Application Examples of Reset IC For the Power Section of SH Microcomputers Analog & Discrete Business Unit Discrete & Standard IC Product Marketing Dept. June 2007 2007. Renesas Technology Corp., All rights reserved. Rev. 2.00 Notes regarding these materials


    Original     		PDF HAT1069C HAT1069C HD74LV2G14A RNA52A10MM HD64F7058F hd64f7065f R5F72115 HD6417706BP 74LV1G HD64F7055S R5F72 SH7785 HD6417720BP 74LV1G08A

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		PDF REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


    Original     		PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


    Original     		PDF CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as