H5N2509 Search Results

H5N2509 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
H5N2509P-E		Renesas Electronics Corporation	Nch Single Power Mosfet 250V 30A 69Mohm To-3P
H5N2509PF-E#T205		Renesas Electronics Corporation	Nch Single Power Mosfet 250V 30A 69Mohm To-3Pfm

H5N2509 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
H5N2509P	Hitachi Semiconductor	SILICON N CHANNEL MOSFET SWITCHING	Original	PDF
H5N2509P	On Semiconductor	Silicon N Channel MOSFET High Speed Power Switching	Original	PDF
H5N2509P	Renesas Technology	Silicon N Channel MOSFET High Speed Power Switching	Original	PDF
H5N2509P	Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching	Original	PDF

H5N2509 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Hitachi MOSFET Abstract: Hitachi DSA002730 Text: H5N2509P Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1378 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.053 Ω typ. (ID=15A, VGS=10V) Low drain cut-off current: IDSS = 1 µA max (at VDS = 250 V, VGS=0)	Original	H5N2509P ADE-208-1378 D-85622 Hitachi MOSFET Hitachi DSA002730	PDF
Hitachi DSA0076 Abstract: H5N2509P Text: H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 Z Target Specification 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) = 0.053 Ω typ.	Original	H5N2509P ADE-208-1378 Hitachi DSA0076 H5N2509P	PDF
H5N2509P Abstract: H5N2509P-E PRSS0004ZE-A SC-65 Text: H5N2509P Silicon N Channel MOS FET High Speed Power Switching REJ03G1109-0200 Previous: ADE-208-1378 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.053 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)	Original	H5N2509P REJ03G1109-0200 ADE-208-1378) PRSS0004ZE-A H5N2509P H5N2509P-E PRSS0004ZE-A SC-65	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
2SK3235 Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053 Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting	Original	HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053	PDF
7054F Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver	Original	2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557	PDF
H5N2509P Abstract: H5N2509P-E PRSS0004ZE-A SC-65 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
1002ds Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2	Original	2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj	PDF
H5N2509P Abstract: No abstract text available Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original		PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original		PDF
lvc16244 Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List	Original	HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP	PDF
2SC 8550 Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4	Original	3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545	PDF

rjp3053 Abstract: RJP3065 RJP3063 RJP3053DPP RJP2557 Rjp30 RJP3065DPP RJP3057 RJP3063DPP RJP4065 Text: April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE sat High-speed switching PDP System PDP trends Scan IC Y Panel Sustain circuit X Power device High breakdown	Original	H7N1005LS H7N1004LS H5N2301PF H5N2306PF H5N2305PF H5N2509P H5N2503P H5N3004P H5N3007LS H5N3003P rjp3053 RJP3065 RJP3063 RJP3053DPP RJP2557 Rjp30 RJP3065DPP RJP3057 RJP3063DPP RJP4065	PDF
H5N2509P Abstract: Hitachi DSA00303 Text: ߅ቴ᭽ฦ૏ ⾗ᢱਛߩ‫ޟ‬ᣣ┙⵾૞ᚲ‫ޔޠ‬ ‫ޟ‬ᣣ┙:‫╬ޠ‬ฬ⒓ߩᩣᑼળ␠࡞ࡀࠨࠬ࠹ࠢࡁࡠࠫ߳ߩᄌᦝߦߟ޿ߡ ‫ޓ‬ᐕ᦬ᣣࠍએߞߡਃ⪉㔚ᯏᩣᑼળ␠෸߮ᩣᑼળ␠ᣣ┙⵾૞ᚲߩࡑࠗࠦࡦ‫ޔࠢ࠶ࠫࡠޔ‬	Original	H5N2509P ADJ-208-1535B H5N2509P Hitachi DSA00303	PDF
1002ds Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5	Original	24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as	PDF
TO220CFM Abstract: TO220FM HAT1053M 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T Text: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476G Z 8th. Edition Jun. 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6 D D	Original	HAT1024R ADE-208-476G pdf\7420e HAT1044M HAT1053M HAT2053M HAT2054M TO220CFM TO220FM 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T	PDF
H7N1009MD Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility	Original	CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as	PDF
m61266 Abstract: M61262 m61260 r2j101 R2s15102np r2j10160 ha118225f M61266FP r2j10160-xxxfp R2S15102NP Text: 2005.10 Everywhere you imagine. _ ICs for video signals j i / Z t t Z r f s n y w w w .re n e sa s.co m • - « i U -'^ 3 ^ t? \|gr 0 W & à i T 3 Pursuing high quality with one-chip solutions R enesas ICs for video signals. c R T » è f« a o f '^ '/ U	OCR Scan	RJJ01 F0006-0400 m61266 M61262 m61260 r2j101 R2s*15102np r2j10160 ha118225f M61266FP r2j10160-xxxfp R2S15102NP	PDF

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H5N2509 Search Results

H5N2509 Result Highlights (2)

H5N2509 Datasheets (4)

H5N2509 Datasheets Context Search

Hitachi MOSFET

Hitachi DSA0076

H5N2509P

Untitled

2SK3235

7054F

H5N2509P

IRF1830G

1002ds

H5N2509P

rjh3047

rjp6065

lvc16244

2SC 8550

rjp3053

H5N2509P

1002ds

TO220CFM

H7N1009MD

m61266