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    H3 DIODE Search Results

    H3 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    H3 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPJ-H3 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPJ-H3 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters


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    sanken power transistor

    Abstract: No abstract text available
    Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPJ-H3 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPJ-H3 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters


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    0E-01 0E-02 0E-03 sanken power transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. SJPX-H3 1. Scope The present specifications shall apply to an SJPX-H3. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 060509 1/5 61426-01 SANKEN ELECTRIC CO., LTD.


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    UL94V-0 10msec. 1msect10msec PDF

    DP5Z1MM8NKH3

    Abstract: 00FIH
    Text: 1Mx8, 120 - 200ns, STACK/PGA 30A189-01 A 8 Megabit FLASH EEPROM DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 PRELIMINARY DESCRIPTION: The DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’


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    200ns, 30A189-01 50-pin DP5Z1MM8NKH3 00FIH PDF

    DP5Z1MM16PH3

    Abstract: DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3
    Text: 1Mx16, 120 - 200ns, STACK/PGA 30A162-21 A 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 PRELIMINARY DESCRIPTION: The DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’


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    1Mx16, 200ns, 30A162-21 DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 50-pin 16-Megabits DP5Z1MM16PY DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 DP5Z1MM16PH3 DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3 PDF

    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


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    SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA PDF

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


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    SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    Untitled

    Abstract: No abstract text available
    Text: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 mm Round LED,T-1 3/4 333-2SURC/H3/OMA-E12 Features ․Popular T-1 3/4 diameter package. ․Choice of various viewing angles. ․Available on tape and reel. ․Reliable and robust.


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    333-2SURC/H3/OMA-E12 DLE-033-993 PDF

    ADA4960

    Abstract: ADA4960-1 MO-220-VEED-2
    Text: Preliminary Technical Data FEATURES Low Distortion Ultrahigh Speed Differential ADC Driver ADA4960-1 PIN CONFIGURATION Adjustable output common-mode voltage Externally adjustable gain −3 dB bandwidth of 3GHz, all gains Low harmonic distortion (H2/H3 SE->DIFF)


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    ADA4960-1 67dBc 16-Lead 24-Lead MO-220-VEED-2 CP-16-2) PR08458-0-12/09 72208-A ADA4960 ADA4960-1 MO-220-VEED-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: April 4, 2013 C8051F41x Revisions A-F Errata Hardware Errata Erratum # H1 H2 H3 Title XTLVLD is Incorrect Port Pin Overvoltage Clock Glitch During the Clock Multiplier Initialization Sequence Impact Minor Minor Minor Status Affected Revisions Fixed Revision


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    C8051F41x PDF

    flatiron

    Abstract: data base job led lifespan electric field
    Text: ARPL-P200K3C-H3 940nm, 700mA Features • Substrate: Aluminum Plate • High intensity, Long life-span Applications • • • • Free air transmission system Infrared remote control units with high power requirement Smoke detector Infrared applied system


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    ARPL-P200K3C-H3 940nm, 700mA) 700mA flatiron data base job led lifespan electric field PDF

    Vishay diodes code marking

    Abstract: marking code vishay label VISHAY MARKING CODE Vishay SOT23 MARKING F5 Vishay DaTE CODE marking code vishay MARKING CODE f5 SOD-523 DO-219AB marking CODE n5 marking l4 sot-23
    Text: VISHAY Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 18904 Figure 4. SOD-323 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year


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    OD-323 LLP75-3A, LLP75-3B OD-523 DO-219AB) OT-23 OD-123 06-May-04 DO-35 Vishay diodes code marking marking code vishay label VISHAY MARKING CODE Vishay SOT23 MARKING F5 Vishay DaTE CODE marking code vishay MARKING CODE f5 SOD-523 DO-219AB marking CODE n5 marking l4 sot-23 PDF

    diode DB3 C531

    Abstract: DB3 C531 diode db3 c432 MST9131 DB3 C502 mstar scaler DB3 C432 diode DB3 C535 rtl8201 schematic circuit RTL8201 Design
    Text: 5 X A X X_FM X X_FM 2 1 +3VS H25 C266 C552 C704 C_NC C_NC C_NC H8 HOLES_S276D118 H16 HOLES_S276D118 H2 HOLES_S276D118 HOLES_S276D118 C150 C563 C78 C163 C_NC C_NC C_NC C_NC +1.8VS H22 H15 HOLES_S276D118 HOLES_S276D118 H3 HOLES_S276D118 H24 H12 HOLES_S276D118


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    uPGA563 M741-1 M741-2 M741-3 M741-4 963L-1 963L-2 963L-3 diode DB3 C531 DB3 C531 diode db3 c432 MST9131 DB3 C502 mstar scaler DB3 C432 diode DB3 C535 rtl8201 schematic circuit RTL8201 Design PDF

    F5 marking code

    Abstract: MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123
    Text: Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 Figure 4. SOD-323 18904 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year 5 = Month


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    OD-323 LLP75-3A, LLP75-3B OD-523 DO-219AB) OT-23 OD-123 06-May-04 F5 marking code MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123 PDF

    Untitled

    Abstract: No abstract text available
    Text: 40 Watt 2.0x2.0 Inch Package H3 2:1 Input Range o Efficiency up to 90% o 350 kHz Switching Frequency o 2:1 Input Range o Regulated Single Output o Continuous Short Circuit Protection o Six-Sided Metal Case MODEL NUMBER INPUT VOLTAGE 40H3RS24W3.3LC 40H3RS24W5LC


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    40H3RS24W5LC 40H3RS24W3 40H3RS24W12LC 40H3RS24W15LC 40H3RS48W3 40H3RS48W5LC 40H3RS48W12LC PDF

    30A18

    Abstract: No abstract text available
    Text: 8 Megabit FLASH EEPROM D EN SE-PA C DP5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 M I C K OS V S T \í M S PRELIM INARY D E SC R IP T IO N : The D P5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 "S L C C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'


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    50-pin 150ns 200ns 30A159-01 30A18 PDF

    30100

    Abstract: PBYR30100PT RYE121 PBYR301OOPT
    Text: 4 H3 3 1 WK DISCRETE SEMICONDUCTORS ¡friE E T PBYR301 OOPT series Schottky Barrier rectifier diodes Product specification File under Discrete Semiconductors, SC02 August 1992 Philips Semiconductors PHILIPS bbS3T31 00330GM 137 This Material Copyrighted By Its Respective Manufacturer


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    PBYR30100PT bbS3T31 00330GM 30100 RYE121 PBYR301OOPT PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diode BAL 74 • For high-speed switching Type Marking Ordering Code tape and reel BAL74 JCs Q62702-A718 Pin Configuration Package1) SOT-23 o- H3- o 3 2 EH M 0001 Maximum Ratings Parameter Symbol Values Unit V


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    BAL74 Q62702-A718 OT-23 M0001 fl235L05 fl5BSb05 PDF

    Untitled

    Abstract: No abstract text available
    Text: OXLEY H3 CAPTION INDICATOR LAMPS FEATURES • alphanumeric captions available character or background illumination • reduces need for expensive front panel engraving • improves operator information • IlluW custom engraving available - customer logos, corporate


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    MIL-Q-9858, MIL-l-45208 PDF

    LA3 DR2

    Abstract: vn 530 sp 31 x 132 THOMSON-CSF CCD 414 LEM DIODE tsc 429 7896A
    Text: TD2bô?2 00G223Ö h3^ • - TH 7896A- H _ High data rate version FULL FIELD CCD IMAGE SENSOR 1024x1024 PIXELS ■ Optimized for high data rate applications: minimum readout time = 28 ms (4 outputs).


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    00G223Ö 1024x1024 000E2Sb TH7896AVRH 7896AVR TH7896AGRCQ LA3 DR2 vn 530 sp 31 x 132 THOMSON-CSF CCD 414 LEM DIODE tsc 429 7896A PDF

    SMV1204-99A

    Abstract: smv1204 J016 SMV1204-99 SMV1204-99B varactor alpha
    Text: ALPHA HD/ SEMICONDUCTOR KJE » . 0 5 i s , H3 „ „ „ „ „ 3 ^ Hyperabrupt Varactor Diode Outline Drawing Features: • ■ ■ VHF to UHF & L Band Operation Low Series Resistance Surface Mountable SOT-23 Package Outline - Single diode SMV1204-99A


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    OT-23 SMV1204-99A) SMV1204-99B) SMV1204-99 j0179_ j0062 100mA 250mW SMV1204-99A smv1204 J016 SMV1204-99B varactor alpha PDF

    74fct245

    Abstract: No abstract text available
    Text: NATIONAL SEMICOND LOGIC blE ]> • bS01125 0D7S371 H3*) m CM EHNational t - s* - ? * * / ÆM Semiconductor 54FCT/74FCT245 Octal Bidirectional Transceiver with TRI-STATE Inputs/Outputs General Description Features The 'FCT245 contains eight non-inverting bidirectional buff­


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    bS01125 0D7S371 54FCT/74FCT245 FCT245 74FCT245 PDF

    A315A

    Abstract: A315B A315 A315F A315G
    Text: HARRIS SEMICON» SECTOR bflE D 33 HB H3Ü2271 A315 Series 3A, 50V - 200V Ultrafast Diodes December 1993 Features • 0050333 0=10 H H A S Package AL-4 Glass Passivated Junction TOP VIEW • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability


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    A315A, A315B, A315F, A315G 50/100NS/CM) 25VDC A315A A315B A315 A315F PDF

    BUZ14

    Abstract: D1267 D0145 transistor buz L11F
    Text: BUZ14 PowerMOS transistor N A 1ER PHILIPS/DISCRETE ObE D btiSBTBl D0mS77 4 T-51 H3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


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    BUZ14 D0mS77 T-51-13 BJJZ14 bbS3T31 BUZ14 D1267 D0145 transistor buz L11F PDF