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    BUZ14

    Abstract: D1267 D0145 transistor buz L11F
    Text: BUZ14 PowerMOS transistor N A 1ER PHILIPS/DISCRETE ObE D btiSBTBl D0mS77 4 T-51 H3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ14 D0mS77 T-51-13 BJJZ14 bbS3T31 BUZ14 D1267 D0145 transistor buz L11F

    DDMS770

    Abstract: PC1210 SiEMENS EC 350 98 0
    Text: bGE ]> • Ô235b05 00457ti5 T3S M S I E C SIEMENS SIEMENS AKTI ENGESELLSCHAF ■7- 2 3 - Ö SI MOPAC Module VDS / d 7 BSM 294 F = 1000 V = 2 x 18 A R DS on = 0.63 £2 • • • • • • • Power module Half-bridge FREDFET N channel Enhancement mode


    OCR Scan     		PDF 023SbOS C67076-A1151-A2 fl23Sbà S1M00189 DDMS770 PC1210 SiEMENS EC 350 98 0