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    ST2009

    Abstract: ST2006 H24B1 H24B2 ST2012 ST4004 H24BJ st2014
    Text: EXl aPTQELECiaONiCS H24B1 H24B2 DESCRIPTION PACKAGE DIMENSIONS .50 REF D + The H24B series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing compatible with a dual in-line package.


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    H24B1 H24B2 E51868 ST2006 ST4004 Cto85Â ST2012 300/ii ST2013 ST2014 ST2009 ST2006 ST2012 H24BJ PDF