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    Panduit Corp UTPCH16Y

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    Amphenol PCD ELDH16Y3A

    SEALING GASKET,CONDUCTIVE,65SH,
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    Amphenol PCD ELDH16Y2A

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    Panduit Corp UTPCH16YLY

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    Panduit Corp UTP28CH16YL

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    H16Y Datasheets Context Search

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    H12Y

    Abstract: H11X H11Y H14Y H10Y 20-channel
    Text: SSI 32R2112R 20-Channel Thin Film Read/Write Device October 1995 FEATURES The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high performance write driver, write current control, and


    Original
    PDF 32R2112R 20-Channel 32R2112R 32R2110R/2111R 32R2112 mak17 64-Lead, H12Y H11X H11Y H14Y H10Y

    philips ecg master replacement guide

    Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
    Text: STORAGE PRODUCTS REFERENCE GUIDE Market Number Channels Flip Flop Input Type Noise nV/Hz Write Current, mA Input Cap, pF Servo Enable Voltage Gain Damp Resistor Bandwidth MHz, Min. Package Min. Head Swing Vp-p R 5 & 12 Volt Thin Film Read/Write Preamps Rise time 7 ns, Head Swing 11 Vp-p, Power 235 mW


    Original
    PDF 32R2105RW 32R2110RW 32R2111RW 32R2112RU 32R2124RV philips ecg master replacement guide smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024

    H14Y

    Abstract: No abstract text available
    Text: VM5200M VTC Inc. Value the C ustom er 10 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY DESCRIPTION The VM5200M is a high-performance, integrated read/write preamplifier designed for use with two-terminal, thin-film record­


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    PDF VM5200M 20-CHANNEL, VM5200M 100mV, 10MHz H14Y

    Untitled

    Abstract: No abstract text available
    Text: w VM782020 U I£ J U S » 20-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • « r N « rr O O > -X > -) < > - X > -X 6463626160595857565554535251S049 N H14X Hu y H15X H15Y | i i i 3 H5Y 3 H5X 3 H4Y 3 H4X 3 H3Y 3 H3X 3 H2Y


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    PDF VM782020 20-CHANNEL, 55nV/VHz

    6914

    Abstract: H21Y
    Text: SS! 32R2110R/2111R mmsvskms 10-Channel Two Terminal Thin-Film Read/Write Device A TDK Group/Company Advance Information January 1994 DESCRIPTION FEATURES The SSI 32R2110R/2111R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. It is intended for use in hard disk drive


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    PDF 32R2110R 32R2111R 32R211 OR/2111R 253TL 6914 H21Y

    MAX232

    Abstract: H14Y
    Text: VM782020 V W Y J £ |2 £ - 20-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 FEATURES • High Performance - Read Gain = 200 V/V Typical - Input Noise = 0.55nV/VFiz Typical - Head Inductance Range = 0 . 2 - 5 |o.H 0.5 nH Typical - IW Rise/Fall Times = 9 ns (LH = 1 (j.H, lw = 20 mA b-p)


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    PDF VM782020 20-CHANNEL, 55nV/VFiz VM782020 MAX232 H14Y

    1m6y

    Abstract: No abstract text available
    Text: SS! 32R211 OR/2111R ¿ilimsitskns 10-Channel Two Terminal Thin-Film Read/Write Device A TDK Group/Company Advance Information January 1994 DESCRIPTION FEATURES The SSI 32R211 OR/2111R is a BiCMOS monolithic integrated circuit designed for use with two-terminal


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    PDF 32R2110R/32R2111R 32R2110R/2111R 1m6y

    H22Y

    Abstract: No abstract text available
    Text: SSI 32R2110R/2111 R c s ilm M k m 24-Channel Thin Film Read/Write Devices s A TDK Group/Company Target Specification January 1995 DESCRIPTION FEATURES The SSI 32R2110R/2111R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low noise read


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    PDF 32R2110R/2111 24-Channel 32R2110R/2111R 350i2 32R211 OR/2111 H22Y

    H14Y

    Abstract: No abstract text available
    Text: SSI 32R2112R m m M k m 20-Channel Thin Film Read/Write Device s ' A TDK Group/Company October 1995 DESCRIPTION FEATURES 5V ± 10%, 12V ± 10% supply The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high


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    PDF 32R2112R 20-Channel 32R2112R 32R2110R/2111R 32R2112 32R2112RU 64-Lead 32R2112RU-20CGT 32R2112RU-20 3B-46 H14Y

    H16Y

    Abstract: No abstract text available
    Text: m S S I3 2 R 2 1 1 2 R 20-Channel Thin Film Read/Write Device m s u s b n s * A TDK Group/Company October 1995 DESCRIPTION FEATURES The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high


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    PDF 20-Channel 32R2112R 32R2110R/2111R 250i2 32R2112 32R2112RU 64-Lead 32R2112RU-20CGT 32R2112RU-20 3B-46 H16Y

    H21Y

    Abstract: No abstract text available
    Text: mmMbtis SSI 32R2110R/2111 R 10-Channel Two Terminal Thin-Film Read/Write Device * A TDK Group/Company Advance Information January 1994 DESCRIPTION FEATURES The SSI 32R211 OR/2111R is a BiCMOS monolithic integrated circuit designed for use with two-terminal


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    PDF 32R2110R/2111 10-Channel 10Vpp 32R211 OR/2111R H21Y

    silicon systems

    Abstract: No abstract text available
    Text: SSI 32R211 OR/2111R ¿ ib m s v s k m A TDK Group/Company 24-Channel Thin Film Read/Write Devices s Target Specification January 1995 DESCRIPTION FEATURES The SSI 32R211 OR/2111 R are BiCMOS monolithic integrated circuits designed for use with two-terminal


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    PDF 32R211 OR/2111R 24-Channel OR/2111 32R2110R/2111R 350S2 32R2110R/2111 silicon systems

    a2531

    Abstract: 2112R
    Text: ¿ilicotisystems S S I3 2 R 2 1 1 2 R 20-Channel Thin Film Read/Write Device A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES The SSI 3 2 R 2 1 12R is a BiC M O S m onolithic integrated circuit designed for use w ith tw o-term inal recording


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    PDF 32R2112R 32R211 OR/2111R 6S531bS a2531 2112R

    H21Y

    Abstract: HD14X HD14Y
    Text: ê* é VM 313H24 VTC In c . W 24-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 FEATU R ES CONNECTION DIAGRAM • High Performance: - Read Mode Gain = 250V/V - Low Input Noise = 0.8nV/VHz Maximum - Input Capacitance = 25pF Maximum


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    PDF 313H24 24-CHANNEL, 50V/V 200nH VM313H24 10MHz 600nH, H21Y HD14X HD14Y