Untitled
Abstract: No abstract text available
Text: SML-H12Y8T Data Sheet SML-H1series Actualsize 2012（0805） 2.0x1.25mm（t=0.8mm） Features ・ . Color Type V U D Y W M P Specifications AbsoluteMaximumRatings Ta＝25℃ ElectricalandOpticalCharacteristics(Ta＝25℃)
|
Original
|
PDF
|
SML-H12Y8T
SML-H12V8T
SML-H12U8T
SML-H12D8T
SML-H12M8T
SML-H12P8T
62ease
R1120A
|
H12Y
Abstract: H11X H11Y H14Y H10Y 20-channel
Text: SSI 32R2112R 20-Channel Thin Film Read/Write Device October 1995 FEATURES The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high performance write driver, write current control, and
|
Original
|
PDF
|
32R2112R
20-Channel
32R2112R
32R2110R/2111R
32R2112
mak17
64-Lead,
H12Y
H11X
H11Y
H14Y
H10Y
|
H0Y-H13Y
Abstract: H13V
Text: SSI 32R5281AR M m M lm 14-Channel Two-Terminal Read/Write Device A TDK Group/Company Advance Information July 1992 DESCRIPTION FEATURES The SSI 32R5281AR Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low
|
OCR Scan
|
PDF
|
32R5281AR
14-Channel
32R5281AR
14channels.
H0Y-H13Y
H13V
|
Untitled
Abstract: No abstract text available
Text: SSI 32R5281R M M M k m 14-Channel Two-Terminal Read/Write Device s A TDK G rou p /C om pany Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5281R Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low
|
OCR Scan
|
PDF
|
32R5281R
14-Channel
32R5281R
14channels.
|
H14Y
Abstract: VM31316
Text: m a VTC Inc. Value the Customer VM31316 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES July, 1993 CONNECTION DIAGRAM • High Performance: - Read mode gain = 150 V/V - Low input noise = 0.8nVA/Hz maximum - Input capacitance = 25 pF maximum
|
OCR Scan
|
PDF
|
VM31316
16-CHANNEL,
32R2010
10OmV,
10MHz
600nH,
H14Y
VM31316
|
Untitled
Abstract: No abstract text available
Text: vC^VTCInc YJEc— » VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER _ July, 1993 FE A T U R E S TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • High Performance:
|
OCR Scan
|
PDF
|
14-CHANNEL,
VM312H
32R5121
600nH,
|
Untitled
Abstract: No abstract text available
Text: SSI 32R5121/5121R Mmsifskms' 14-Channel Thin Film Read/Write Device A TDK G roup/C om pa ny Advance Information November 1991 FEATURES DESCRIPTION The SSI 32R5121/5121R Read/Write devices are bi polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro
|
OCR Scan
|
PDF
|
32R5121/5121R
14-Channel
32R5121/5121R
|
VM VTC
Abstract: No abstract text available
Text: VM31216 Value the Customerm 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • • • • • • • • • High Performance: - Read Mode Gain = 150 V/V - Low Input Noise = 0.85nV/VHz Maximum - Input C apacitance = 25 pF Maximum
|
OCR Scan
|
PDF
|
VM31216
16-CHANNEL,
V/12V
85nV/VHz
32R2015
600nH,
VM VTC
|
sol 44
Abstract: H11Y
Text: SI L I C O N SYSTEMS INC hlE D • 8 2 5 3 ^ 5 00Qb477 MSI I I S I L SSI 32R5121/5121R ¿ 14-Channel Thin Film Read/Write Device ilic m á y s b n s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi
|
OCR Scan
|
PDF
|
00Qb477
32R5121/5121R
14-Channel
32R5121/5121R
sol 44
H11Y
|
sol 44
Abstract: H13Y
Text: SSI 32R5121/5121R m m M k n 14-Channel Thin Film Read/Write Device t s Advance Information July, 1990 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They
|
OCR Scan
|
PDF
|
32R5121/5121R
14-Channel
32R5121/5121R
sol 44
H13Y
|
H13Y
Abstract: HD12X
Text: ^ VTC1nc y jr jE S ; . V M 313H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • High Performance: - Read mode gain = 250V/V - Low input noise = 0.8nV/VRz maxim um
|
OCR Scan
|
PDF
|
14-CHANNEL,
50V/V
200nH
100mV,
10MHz
600nH,
H13Y
HD12X
|
Untitled
Abstract: No abstract text available
Text: m # * t c , „ c ~ VM313H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 FEATURES DESCRIPTION The VM313H is a high-performance, low-power, high gain, bi polar monolithic read / write preamplifier designed for use with two-terminal thin-film recording heads. It provides write current
|
OCR Scan
|
PDF
|
VM313H
14-CHANNEL,
VM313H
180mW.
10OmV,
10MHz
100mV,
10MHz
600nH,
|
Untitled
Abstract: No abstract text available
Text: ♦T* VM 312H W 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER Ju ly , 1992 FEATURES DESCRIPTION The VM312H is a high-performance, low-power, high-gain, bipolar monolithic read / write preamplifier designed for use with two-terminal thin-film recording heads. It provides write
|
OCR Scan
|
PDF
|
14-CHANNEL,
VM312H
180mW.
100mV,
10MHz
10OmV,
10MHz
600nH,
|
Untitled
Abstract: No abstract text available
Text: y y V T C In c. Value the Custom er VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY F E A TU R ES CONNECTION DIAGRAMS • High Performance: - Read mode gain = 250V/V CZ] CZ m| CZ H 13X H 13Y HOX HOY H1X nz H1Y n
|
OCR Scan
|
PDF
|
VM312H
14-CHANNEL,
50V/V
100mV,
10MHz
600nH,
|
|
|
Untitled
Abstract: No abstract text available
Text: SSI 32R2015R ¿immsiiskms 16-Channel Thin Film Read/Write Device A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2015R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains sixteen channels of read
|
OCR Scan
|
PDF
|
32R2015R
330i2
52-pin
32R2015R
16-Channel
|
H13Y
Abstract: No abstract text available
Text: SSI 32R5281R c w m M fc m A TDK Group/Company 14-Channel Two-Terminal Read/Write Device s Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5281R Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low
|
OCR Scan
|
PDF
|
32R5281R
14-Channel
32R5281R
700ii
H13Y
|
H13Y
Abstract: No abstract text available
Text: V M 5200 10,14 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • High Performance - Rise/Fall Times = 6.5 ns Typical into 1 |iH Head - Input Capacitance = 15 pF Typical - Input Noise = 0.52 nV/VHi Typical - Head Inductance Range = 0 .2 -1 .5 |iH
|
OCR Scan
|
PDF
|
20-CHANNEL,
5W12V
20-Channels,
VM5200
V/12V
5S425,
V/12V
H13Y
|
Untitled
Abstract: No abstract text available
Text: November 1990 PRELIMINARY rtfe, ML4415, ML4415R ML4416, ML4416R . Micro Linear 15 Channel Read/Write Circuit GENERAL DESCRIPTION FEATURES The ML4415, ML4416 devices are bipolar monolithic read/write circuits designed for use with fixed disk ferrite center-tapped recording heads. They provide a
|
OCR Scan
|
PDF
|
ML4415,
ML4415R
ML4416,
ML4416R
ML4416
ML4415
ML4416
40/lw)
3659065/4A6.
|
32R2015R
Abstract: No abstract text available
Text: SSI 32R2015R ¿ ik m s if s k m 16-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2015R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains sixteen channels ot read
|
OCR Scan
|
PDF
|
32R2015R
16-Channel
32R2015R
52-pin
|
H13Y
Abstract: 5121R H13V
Text: SSI 32R5121/5121R M e m s y s te m 14-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information November 1991 DESCRIPTION FEATURES The SSI 32R5121/5121R Read/Write devices are bi polar monolithic integrated circuits designed for use with two terminal thin film recording heads. They pro
|
OCR Scan
|
PDF
|
32R5121/5121R
14-Channel
32R5121/5121R
H13Y
5121R
H13V
|
Untitled
Abstract: No abstract text available
Text: S S I 32R5281AR mmsysbns 14-Channel Two-Terminal Read/Write Device A TDK Group/Company Advance Information July 1992 DESCRIPTION FEATURES The S S I 32R5281AR Read/Write device is a bipolar monolithic integrated circuit designed for use with twoterminal thin-film recording heads. It provides a low
|
OCR Scan
|
PDF
|
32R5281AR
14-Channel
32R5281AR
|
Untitled
Abstract: No abstract text available
Text: W ^ VValue T the C Customer -In c v VM31316 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER ADVANCE INFORMATION FEATURES July, 1992 C O N NECTIO N D IA G R A M TWO-TERMINAL READ/WRITE PREAMPS • High Performance: - Read mode gain = 150V/V_
|
OCR Scan
|
PDF
|
VM31316
16-CHANNEL,
50V/V_
85nV/VHz
200nH
10MHz
100mV,
10MHz
600nH,
|
Untitled
Abstract: No abstract text available
Text: r a * 8 VM5200 í % A-A# V T C In c . l/a/ue ífte Cusióme/- 10,14 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August,1997 FEATU R ES • High Performance - Rise/Fall Times = 6.5 ns Typical into 1 nH Head - Input Capacitance = 15 pF Typical
|
OCR Scan
|
PDF
|
VM5200
20-CHANNEL,
VM5200
646362S1605958575655545352515049
5S57565554535.
5r5049'
14-Channel
64-lead
17181920212223242526272829X3132/
|
Untitled
Abstract: No abstract text available
Text: V M W X IS J S S j- 3 1 2 H 14-CHANNEL, h ig h - p e r f o r m a n c e , THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 CO N N EC TIO N DIAGRAM S TWO-TERMINAL PREAMPLIFIERS FE A T U R E S • High Performance: - Read Mode Gain = 250 V/V - Low Input Noise = 0.8nV/VHz Maximum
|
OCR Scan
|
PDF
|
14-CHANNEL,
32R5121
VM312H
600nH,
|
