10Gbase-kr backplane connector
Abstract: 10GBASE-KR GR-1217-CORE 76020-ABCD sata male amphenol metal housing 2 row 120 pin
Text: Backplane Products Visit www.molex.com to access more part numbers and product information, download sales drawings, product specifications, 3D models, place sample requests, and more. Backplane Roadmap. H-2
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1100nC
Abstract: APT20M20LLL APT2X101S20J H100 2878 sgs
Text: 2 3 2 2 3 3 1 1 4 1 Anti-Parallel 4 4 27 2 T- SO APT2X101S20J Parallel APT2X101S20J 200V 120A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Rectifiers in Switchmode Power • • • • •
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APT2X101S20J
OT-227
1100nC
APT20M20LLL
APT2X101S20J
H100
2878 sgs
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2a 200v schottky diode
Abstract: APT20M20LLL APT2X100S20J APT2X101S20J H100
Text: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X100S20J APT2X101S20J 27 2 T- 4 APT2X101S20J APT2X100S20J 200V 120A 200V 120A DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Rectifiers in Switchmode Power
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APT2X101S20J
APT2X100S20J
OT-227
2a 200v schottky diode
APT20M20LLL
APT2X100S20J
APT2X101S20J
H100
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2a 200v schottky diode
Abstract: No abstract text available
Text: 2 2 3 3 1 1 27 2 T- 4 SO 4 Parallel APT2X101S20J "UL Recognized" APT2X101S20J 200V 120A file # E145592 ISOTOP fi DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Rectifiers in Switchmode Power
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APT2X101S20J
E145592
OT-227
2a 200v schottky diode
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rjp6065
Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance
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APT20M20LLL
Abstract: APT2X101S20J H100
Text: 2 2 3 3 1 1 27 2 T- 4 SO 4 Parallel APT2X101S20J "UL Recognized" APT2X101S20J 200V 120A file # E145592 ISOTOP fi DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Rectifiers in Switchmode Power
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APT2X101S20J
E145592
OT-227
APT20M20LLL
APT2X101S20J
H100
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Untitled
Abstract: No abstract text available
Text: 2 2 3 3 1 1 4 SO 4 27 -T 2 Parallel APT2X101S20J "UL Recognized" APT2X101S20J 200V 120A file # E145592 ISOTOP fi DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Rectifiers in Switchmode Power
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APT2X101S20J
E145592
OT-227
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Untitled
Abstract: No abstract text available
Text: AC-DC Converters www.powersolve.co.uk MP Series Modular Configurable Power Supplies 400-1200 Watts Single & Multi Outputs Features MP4 • Current share on all outputs with ratings of 10A or greater • Remote sense on all outputs with ratings greater than 2A
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EN61000-3-2
EN55022
10in-lbs
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Untitled
Abstract: No abstract text available
Text: Smart choice for power BAT T E RY C H A R G E R S Ultimate, High Performance, Worldwide Charging 20A TRUECharge™2 battery chargers lead the industry with a small footprint and ultra-compact design. In addition to meeting global safety and regulatory standards, TRUECharge2 battery chargers feature
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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buw13a philips semiconductor
Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF
Text: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A
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S3T31
BUT18
O-220AB
180ns
BUT18A
BUT18F
OT-186
BUT18AF
BUT12
buw13a philips semiconductor
mje13008
BUS12
BUS12A
BUT12A
BUS13
BUT18AF
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Untitled
Abstract: No abstract text available
Text: n - n x V'CX-Y- — K ïÎ'n .— i> Diode Module Super Fast Recovery Diode OUTLINE DIMENSIONS D120LC40B 400V 120A > trrl 00 n s > F A s D 7 t t 'iy h RATINGS Absolute Maximum Ratings a Item a Storage Temperature Operating Junction Temperature Maximum Reverse Voltage
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D120LC40B
120LC40
J515-5
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Untitled
Abstract: No abstract text available
Text: — K ïÎ'n .— i> Diode Module n - n x V 'C X - Y - Super Fast Recovery Diode OUTLINE DIMENSIONS D120LC40 400V 120A > t r r l 00n s > F A s D 7 tt'iy h RATINGS Absolute Maximum Ratings a a Ite m Storage Temperature m &nm m Operating Junction Temperature
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D120LC40
J515-5
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T1P126
Abstract: transistor g35 B250H TIPI20 transistor darlington TIP-120 TIP120 TIP125 TB-127 tip120 pnp
Text: 1 4E D SAMSUNG SEMICONDUCTOR INC I 7^4145 0007734 J 3 NPN CKII AXIAL SILICO I DARLINGTON TRANSISTOR TIP120 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125 AB SO LU T E M A X IM U M RATINGS Ta=25°C Characteristic Collector-Base Voltage
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TIP120
TIP125
O-220
T1P126
transistor g35
B250H
TIPI20
transistor darlington TIP-120
TIP120
TIP125
TB-127
tip120 pnp
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110N20
Abstract: pf 480 d25
Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)
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200ns
200ns
O-264
110N20
120N20
Cto150
110N20
pf 480 d25
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Untitled
Abstract: No abstract text available
Text: SEMELAB LTD 37E Û1331Ô7 GDDG1SÔ SEMELAB K BUP49 /> o d NPN MULTI-EPITAXIAL TRANSISTOR M E C H A N IC A L D A T A Designed for high energy applications requiring robust fast switching devices D im ensions in mm FEATURES • LOW V CE|I11, 1-6 • FA ST SW ITCHING
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BUP49
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HPM7
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 7 12A 120A Hybrid Pow er M odule MHPM A Integrated Power Stage for 2.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A10S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7A10S120DC3)
HPM7
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Untitled
Abstract: No abstract text available
Text: 2N2102 • 2N4036 COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 THE 2N210? NPN AND 2N4056(PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS. C E B
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2N2102
2N4036
2N210?
2N4056
2N21Q2
150mA
150mA
8100B
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skt40
Abstract: SKT40-04C SKT40-08C skt semikron semikron skt 50
Text: ¿IE D • fil3bb?l DD03472 732 « S E K G S EM IK K O N SEMIKRON INC Vrsm Vrrm Vdrm \d-t /c r Itrms (maximum values for continuous operation) 63 A I 78 A lTAv(sin.180;l case ” . °C) 50 A (78 °C) 40A(80°C) V V V /|is 500 400 200 SKT40/04 C 700 600
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13bb71
DD03472
SKT40/04
SKT40/06
SKT40/08
5000A2s
4000A2s
B3-15
l3bb71
GQG3M75
skt40
SKT40-04C
SKT40-08C
skt semikron
semikron skt 50
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT60D20B 200V 60A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT60D20B
O-247
O-247AD
B1986
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free transistor book A.Z
Abstract: 552 transistor motorola BTS 716 G MHPM7A5S120DC3 MHPM7B8A120A Motorola T 552
Text: MOTOROLA Order this documenti by MHPM7B8A120A/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M HPM 7 B8 A 120A Integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A5S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7B8A120A/D
MHPM7A5S120DC3)
free transistor book A.Z
552 transistor motorola
BTS 716 G
MHPM7A5S120DC3
MHPM7B8A120A
Motorola T 552
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Untitled
Abstract: No abstract text available
Text: s e MIKRO n V r sm V r r m V d r m V dt f o r maximum values for continuous operation 63 A 78 A V /p s (sin. 180; Tease = . •■°C) 50 A (78 °C) 40 A (80 °C) It r m s IT A V V V 500 400 200 SKT 40/04 C 700 600 200 SKT 40/06 C SKT 40/08 C 900 800 200
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SKT40
SKT50
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o lo g y APT2X60D60J 600V 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT2X60D60J
OT-227
OT-227
UW-6006
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