Untitled
Abstract: No abstract text available
Text: TB2143FLG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB2143FLG BTL Power Amplifier for Piezo Speaker Drive The TB2143FLG is a BTL power amplifier for Piezo speaker drive. It is built in DC/DC converter circuit and BTL power amplifier
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TB2143FLG
TB2143FLG
Sn-37Pb
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tda8357j
Abstract: tda8357 TDA8357j equivalent MGS803 principle of the scan circuit of tv pin voltages OF IC tda8357j GV 475 diode
Text: INTEGRATED CIRCUITS DATA SHEET TDA8357J Full bridge vertical deflection output circuit in LVDMOS Product specification Supersedes data of 1999 Nov 10 2002 May 06 Philips Semiconductors Product specification Full bridge vertical deflection output circuit in LVDMOS
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TDA8357J
TDA8357J
SCA74
753504/03/pp20
tda8357
TDA8357j equivalent
MGS803
principle of the scan circuit of tv
pin voltages OF IC tda8357j
GV 475 diode
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TDA8358J equivalent
Abstract: TDA8358J flyback transformer philips TV philips tv flyback transformer data pin flyback transformer used in color tv DBS13P MGL868 PV2002
Text: INTEGRATED CIRCUITS DATA SHEET TDA8358J Full bridge vertical deflection output circuit in LVDMOS with east-west amplifier Product specification Supersedes data of 1999 Dec 22 2002 Sep 25 Philips Semiconductors Product specification Full bridge vertical deflection output circuit
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TDA8358J
TDA8358J
SCA74
753504/02/pp20
TDA8358J equivalent
flyback transformer philips TV
philips tv flyback transformer data pin
flyback transformer used in color tv
DBS13P
MGL868
PV2002
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1SMB3EZ11
Abstract: 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200
Text: 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l Glass passivated junction
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1SMB3EZ11
1SMB3EZ200
DO-214AA
DO-214AA,
MIL-STD-750,
1SMB3EZ12
1SMB3EZ13
1SMB3EZ14
1SMB3EZ15
1SMB3EZ200
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ILA8357
Abstract: TDA8357J
Text: ILA8357 VERTICAL DEFLECTION AMPLIFIER CIRCUIT functional equivalent of TDA8357J Philips IC ILA8357 - powerful integrated circuit designed for use in 90o and 110 o deflection system of color TV sets. It includes frame deflecting bridge output, which operates as a high
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ILA8357
TDA8357J
ILA8357
ILA8357-Tse,
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amplifire
Abstract: current amplifire circuit diagram sound filter circuit diagram HPF3 m62456fp 8820K "highpass Filter" power amplifire amplifire circuit diagram diode 1,5k
Text: MITSUBISHI SOUND PROCESSORS ICs M62456FP DIGTAL SOUND CONTROLLER PIN CONFIGURATION TOP VIEW DESCRIPTION HPF1-1 HPF1-2 NF1 OUT1 VCC LRNF B1 B2 LEVEL1 LEVEL2 GND INVLPF The M62456FP Integrated Circuit is developed for audio-visual equipment. It being used for
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M62456FP
M62456FP
24pin
4700P
amplifire
current amplifire circuit diagram
sound filter circuit diagram
HPF3
8820K
"highpass Filter"
power amplifire
amplifire circuit diagram
diode 1,5k
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3FW transistor
Abstract: apc2040 MAX3669 MAX3669EHJ MAX3669ETG MAX3693 ww h 845 1 r 3FW 66
Text: 19-1575; Rev 1; 5/04 KIT ATION EVALU ABLE AVAIL +3.3V, 622Mbps SDH/SONET Laser Driver with Current Monitors and APC Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ +3.3V or +5.0V Single-Supply Operation 40mA Supply Current at +3.3V Programmable Bias Current from 1mA to 80mA
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MAX3669
622Mbps
3FW transistor
apc2040
MAX3669
MAX3669EHJ
MAX3669ETG
MAX3693
ww h 845 1 r
3FW 66
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N22 Schalenkern
Abstract: Siemens Ferrite N47 Siemens Ferrite B65541 EFD20 trafo ETD54 n62 R6KE Siemens Ferrite B64290 Siemens Ferrite n67 EC70 N27 siferrit n27
Text: Inhaltsverzeichnis Bauformen-Übersicht Bauformnummern-Verzeichnis SIFERRIT-Werkstoffe Seite 5 11 25 31 Allgemeines - Begriffsbestimmungen Anwendungs-, Verarbeitungshinweise Verpackung 103 121 163 Angaben zur Qualität Normen und Vorschriften 177 181 RM-Kerne
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UC3818
Abstract: BSS133 uc3818 Application Note kw EI-1916 pfcm 120- 5 diode zener fz 5.6v NTC 6D-22 DIODE US1J OF IC 7812 cv REGULATOR IC 7812 SMD
Text: PFCM Design Guide PFCM Design Guide with Analog PFC IC HP SPM & System Engineering Group FAIRCHILD SEMICONDUCTOR 82-3, Dodang-Dong, Wonmi-ku, Puchon, Kyonggi-Do, KOREA Tel 82-32-680-1834, Fax) 82-32-680-1823 Feb. 2006 FAIRCHILD SEMICONDUCTOR – System Engineering Group
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KRC102
EI-1916
SMBJ170
SVC471D
KA431A
1N4734A,
DF08S
15ARMS)
UC3818
BSS133
uc3818 Application Note kw
EI-1916
pfcm 120- 5
diode zener fz 5.6v
NTC 6D-22
DIODE US1J
OF IC 7812 cv
REGULATOR IC 7812 SMD
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LTC5582
Abstract: G37 IC DB 16-16 LTC5567 LTC5567IUF#PBF LTC5583 LT5557 LTC5569 LTC5567IUF 112pF ic
Text: LTC5567 300MHz to 4GHz Active Downconverting Mixer with Wideband IF Features Description n n n n n n n n n The LTC 5567 is optimized for RF downconverting mixer applications that require wide IF bandwidth. The part is also a pin-compatible upgrade to the LT5557 active mixer,
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LTC5567
300MHz
LT5557
LTC6416
16-Bit
LTC6412
LT5554
LT5578
400MHz
LT5579
LTC5582
G37 IC
DB 16-16
LTC5567IUF#PBF
LTC5583
LTC5569
LTC5567IUF
112pF ic
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LTC5569
Abstract: LT5557 LT5554 LTC5585 LTC5567 LT5578 LTC5583
Text: LTC5567 300MHz to 4GHz Active Downconverting Mixer with Wideband IF FEATURES n n n n n n n n n n n DESCRIPTION The LTC 5567 is optimized for RF downconverting mixer applications that require wide IF bandwidth. The part is also a pin-compatible upgrade to the LT5557 active mixer,
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LTC5567
300MHz
LT5557
1950MHz
294mW
14GHz,
530MHz
80dBm,
72dBm
LTC5569
LT5554
LTC5585
LTC5567
LT5578
LTC5583
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LTC5569
Abstract: LTC5583
Text: LTC5569 300MHz to 4GHz 3.3V Dual Active Downconverting Mixer FEATURES n n n n n n n n n n n n DESCRIPTION High IIP3: 26.8dBm at 1950MHz 2dB Conversion Gain Low Noise Figure: 11.7dB at 1950MHz 17dB NF Under 5dBm Blocking 44dB Channel Isolation Low Power: 3.3V/600mW Total
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LTC5569
300MHz
1950MHz
V/600mW
16-Lead
31dBm
14GHz,
72dBm
78dBFS
LTC5569
LTC5583
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LTC5569
Abstract: transformer center tap 0402HP LTC5569IUF N4000-13 TC8-1-10LN 4.5GHz Bandpass filter LT5554 LT5579 LT5578
Text: LTC5569 300MHz to 4GHz 3.3V Dual Active Downconverting Mixer FEATURES DESCRIPTION n n n n n n n n n n The LTC 5569 dual active downconverting mixer is optimized for diversity and MIMO receiver applications that require low power and small size. Each mixer includes an
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LTC5569
300MHz
1950MHz
V/600mW
31dBm
14GHz,
72dBm
78dBFS
250MHz
LTC5569
transformer center tap
0402HP
LTC5569IUF
N4000-13
TC8-1-10LN
4.5GHz Bandpass filter
LT5554
LT5579
LT5578
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LTC5569
Abstract: G1038 schematic diagram vga 15-pin 0402HP LTC5569IUF N4000-13 LTC5569IUF#TRPBF tc8-1-10ln LT5554 LT5579
Text: LTC5569 300MHz to 4GHz 3.3V Dual Active Downconverting Mixer Features Description n n n n n n n n n n The LTC 5569 dual active downconverting mixer is optimized for diversity and MIMO receiver applications that require low power and small size. Each mixer includes an
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LTC5569
300MHz
1950MHz
V/600mW
31dBm
14GHz,
72dBm
78dBFS
250MHz
LTC5569
G1038
schematic diagram vga 15-pin
0402HP
LTC5569IUF
N4000-13
LTC5569IUF#TRPBF
tc8-1-10ln
LT5554
LT5579
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GV 475 diode
Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode
Text: TRANSYS ELECTRONICS LIMITED 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 W atts FEATURES For surface mounted app cations in order to DO-214AA optimize board space MODIFIED J-BEND Low prof e package Built-in strain re ef
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1SMB3EZ11
1SMB3EZ200
0J/10
DO-214AA,
MIL-STD-750,
GV 475 diode
1SMB3EZ12
1SMB3EZ13
1SMB3EZ14
1SMB3EZ200
zener Diode 19B
H 48 zener diode
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HI-8383
Abstract: CA927
Text: mi llll t* HI-8383 ARINC 429 DIFFERENTIAL LINE DRIVER « • ■ h i Function General Description The HI-8383 bus interface device is a lihcon gate CMOS device «fanpMMl u a fine driver in ararrrianwt with die ARINC 429 bn* specification». Inputs are provided for clocking and syndntnzalkm. These sig
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HI-8383
HI-8383
HI-8382U
HI-8383U
CA927
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irf3710
Abstract: mosfet irf3710 ırf3710
Text: P D 9 .1 3 0 9 B International IO R Rectifier IRF3710 PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Vdss = 100V f^DS on Description
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IRF3710
irf3710
mosfet irf3710
ırf3710
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier Provisional Data Sheet No. PD-9.1444A IRHF7310SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 400 Volt, 4.5Q, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology
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IRHF7310SE
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897m
Abstract: marking 2U 95 diode marking DIODE 2U 04
Text: PD 9.1265F International IG R Rectifier IRF7501 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching
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1265F
IRF7501
897m
marking 2U 95 diode
marking DIODE 2U 04
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IRF248N
Abstract: IRFIZ48N
Text: International SRectifier PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V ^DS on = 0.016W lD = 36A Description
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IRFIZ48N
O-220
0316Tel:
IRF248N
IRFIZ48N
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Untitled
Abstract: No abstract text available
Text: P D -9 1 4 7 9 B International Iör Rectifier IRF6215 HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description V dss = •"! 50V RüS on = 0.29Î2
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IRF6215
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Untitled
Abstract: No abstract text available
Text: PD - 91643 International IGR Rectifier IRF6215S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface Mount IRF6215S Low-profile through-hole (IRF6215L) 1 7 5 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated
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IRF6215S/L
IRF6215S)
IRF6215L)
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Preliminary specification Speech and Handsfree 1C with auxiliary inputs/outputs and analog multiplexer TEA1099H FEATURES Auxiliary interfaces Line interface • General auxiliary output for transmit and receive purposes • Low DC line voltage
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TEA1099H
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Untitled
Abstract: No abstract text available
Text: PD - 91742 International IGR Rectifier IRF9Z24NS/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface M ount IRF9Z24NS Low-profile through-hole (IRF9Z24NL) 1 7 5 °C O perating Tem perature P-Channel Fast Switching Fully Avalanche Rated
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IRF9Z24NS/L
IRF9Z24NS)
IRF9Z24NL)
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