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    IRF248N

    Abstract: IRFIZ48N
    Text: International SRectifier PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V ^DS on = 0.016W lD = 36A Description


    OCR Scan     		IRFIZ48N O-220 0316Tel: IRF248N IRFIZ48N PDF