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    GUNN EFFECT Search Results

    GUNN EFFECT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    GUNN EFFECT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN5205

    Abstract: Gunn Diode at power supply circuit gunn diode radar gunn diodes Gunn Diode gunn diode oscillator diode gunn gunn diode radar module radar gunn diode AN5205-2
    Text: AN5205 AC2001 - 77 GHz Gunn Oscillator Module Application Note AN5205-2.0 July 1999 Electric field breakdown of a Gunn diode is related to the 'nl' product of the device doping level multiplied by the active length . The Gunn diode used in the AC2001 is normally operated at about 5 to 7V, whereas voltage


    Original     		AN5205 AC2001 AN5205-2 AC2001 AN5205 Gunn Diode at power supply circuit gunn diode radar gunn diodes Gunn Diode gunn diode oscillator diode gunn gunn diode radar module radar gunn diode PDF

    gunn diode datasheet

    Abstract: gunn diodes gunn diode marconi Marconi gunn Gunn Diode marcon DC1251F DC1251G DC1251H DC1251J
    Text: High Power Gunn Diodes Gallium Arsenide bulk effect devices for CW power generation in the range 4 to 40 GHz * Low cost * High reliability * Custom devices available Minimum Typical Typical operating operating Frequency output band power voltage current Outline


    Original     		DC1253F DC1253G DC1253H DC1283F DC1283G DC1283H DC1251F DC1251G DC1251H DC1251J gunn diode datasheet gunn diodes gunn diode marconi Marconi gunn Gunn Diode marcon DC1251F DC1251G DC1251H DC1251J PDF

    gunn diode datasheet

    Abstract: MARCONI DC1201C Gunn Diode DC1201A marcon DC1203B DC1201E gunn diode marconi DC1203A DC1203C
    Text: Low Power Gunn Diodes Gallium Arsenide bulk effect devices for CW power generation in the range 4 to 26 GHz * Low cost * Low operating current * Custom devices available Minimum Typical Typical operating Frequency output operating band power voltage current


    Original     		DC1203A DC1203B DC1203C DC1203D DC1203E DC1233A DC1233B DC1233C DC1233D DC1233E gunn diode datasheet MARCONI DC1201C Gunn Diode DC1201A marcon DC1203B DC1201E gunn diode marconi DC1203A DC1203C PDF

    gunn diode x band amplifier

    Abstract: RS-8960 gunn diode x band radar X-band doppler radar module 308-017 rs gunn diode radar module RS8960 Gunn Diode at power supply circuit microwave intruder alarm diagram of gunn diode
    Text: E/F3598 Issued July 1985 Doppler module Stocknumber 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave


    Original     		E/F3598 R/3598 gunn diode x band amplifier RS-8960 gunn diode x band radar X-band doppler radar module 308-017 rs gunn diode radar module RS8960 Gunn Diode at power supply circuit microwave intruder alarm diagram of gunn diode PDF

    MA87937

    Abstract: 10 GHz gunn diode Gunn oscillator GaAs x band gunn diode
    Text: Varactor Controlled Oscillator 21.15 - 23.63 GHz MA87937 V3.00 Features ● ● ● ● ● ● 0.670 MOLEX 22-01-3027 0.335 Broadband Electronic Tuning Allows for Center Frequency Setting to Done Electronically, Alleviating the Need for “On Site” Mechanical Adjustments.


    Original     		MA87937 MA87937 10 GHz gunn diode Gunn oscillator GaAs x band gunn diode PDF

    X-band doppler radar module

    Abstract: RS-8960 308-017 rs metal detector using 555 timer diagram of gunn diode Gunn Diode at power supply circuit 747 opamp gunn diode radar gunn diode radar module gunn diode x band amplifier
    Text: Issued March 1997 232-2324 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.


    Original     		R/3598 X-band doppler radar module RS-8960 308-017 rs metal detector using 555 timer diagram of gunn diode Gunn Diode at power supply circuit 747 opamp gunn diode radar gunn diode radar module gunn diode x band amplifier PDF

    RS-8960

    Abstract: diagram of gunn diode RS Microwave Company 747 opamp X-band doppler radar module metal detector using 555 timer gunn diode radar module radar gunn diode 308-017 rs s band doppler mixer
    Text: Issued July 1985 003-598 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.


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    Microwave oscillator

    Abstract: microwave
    Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description


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    FMCW

    Abstract: No abstract text available
    Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 60 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description


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    10GHz oscillator

    Abstract: CXY13D CXY13E gunn effect
    Text: GUNN EFFECT DEVICES CXYI3D CXYI3E TENTATIVE DATA Gallium arsenide bulk effect devices employing the Gunn effect to produce CW oscillations at microwave frequencies. Each device is encapsulated in a varactor type pill package suitable for mounting in various types of


    OCR Scan     		CXY13D CXY13E IB8665I 10GHz. CXY13D-Page 10GHz oscillator gunn effect PDF

    diode b34

    Abstract: Gunn Diode gunn diodes NJX4410 x-band motion detector 4420H gunn effect b34 diode diode a4t gunn diode oscillator
    Text: NEW JAPAN RA D I O CO LTD MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POW ER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw or pulsed mode osillators. These Gunn diodes utilizing the bulk negative resistance effect can be easily obtained microwave


    OCR Scan     		000117b NJX40Q0 NJX4000 NJX4402, diode b34 Gunn Diode gunn diodes NJX4410 x-band motion detector 4420H gunn effect b34 diode diode a4t gunn diode oscillator PDF

    Gunn Diode

    Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
    Text: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property


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    gunn diode generator

    Abstract: No abstract text available
    Text: GEC P L E S S E Y CT3513-1.2 GUNN DIODES - INTRODUCTION INTRODUCTION 1.1. Basic Gunn Diode Action There are two energy levels A and B— also known as Valleys—with the following properties: The variation of current with field for a perfect two terminal gallium arsenide device is shown in simplified form in Fig.1.


    OCR Scan     		CT3513-1 gunn diode generator PDF

    gunn diodes

    Abstract: gunn 4411 gunn diode 10.5 ghz
    Text: NE W J A P A N R A D I O CO L T D MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POWER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw


    OCR Scan     		NJX40Q0 NJX4000 NJX4402, CX4410, 4420U NJX4410, 4420U NJX4621 gunn diodes gunn 4411 gunn diode 10.5 ghz PDF

    gunn effect

    Abstract: Mullard
    Text: 803CXY/A 803CXY/B 803CXY/C G U N N EFFECT DEVICE Dev. Nos. DEVELOPMENT SAMPLE DATA Gallium arsenide bulk effect devices employing the Gunn effect to produce CW oscillations at microwave frequencies. Each device is encapsulated in a varactor type pill package suitable for mounting in various types of cavity.


    OCR Scan     		803CXY/A 803CXY/B 803CXY/C 803CXY/B 803CXY/C 803CXY/A-Page 14GHz) 803CXY/A gunn effect Mullard PDF

    ML4911

    Abstract: No abstract text available
    Text: M L 4000 SERIES MEDIUM AND HIGH POWER CW GUNN DIODES The ML 4900 Series o f G unn diodes is designed to operate using the bulk negative resistive effect and features low fm and am noise characteristics while accom plishing a one-step conversion from dc to microwave energy using a single


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    GUNN DIODE plessey

    Abstract: plessey 10 Gunn oscillator plessey 10 GHz Gunn oscillator DC1230 DC1252 DC1280 Gunn Diode DC1281F
    Text: 37bfl522 GDIÖS'm b3b « P L S B Si GEC PLESSEY S E M I C O N D U C T O R S DS3486-1.2 DC1250/70/80 Series HIGH POWER MICROWAVE GUNN DIODES The DC1250 Series are gallium arsenide bulk effect devices for the generation of CW microwave power in the range 4GHz to18GHz depending on the cavity and diodes


    OCR Scan     		37bfl522 DS3486-1 DC1250/70/80 DC1250 to18GHz DC1280. DC1275 26GHz. 500mW 12GHz GUNN DIODE plessey plessey 10 Gunn oscillator plessey 10 GHz Gunn oscillator DC1230 DC1252 DC1280 Gunn Diode DC1281F PDF

    GUNN DIODE

    Abstract: 10 GHz gunn diode gunn diodes Diode jx4 NJX4404 X-Band Motion Detector Gunn Diode e band gunn diode oscillator gunn effect diode case
    Text: ne:id JAPAN RADI O M5E D CO LTD WM b5bclfla3 0001180 ObS « N J R C MEDIUM POW ER GUNN DIODES p R C l — I ii " " P O I-M N J X400 2 4403 4404 • Description NJX4402, 4403, 4404 are medium power G unn diodes designed for in X -band cw oscillators. These G unn diodes util­


    OCR Scan     		NJX4002/4403/4404 NJX4402, 100-C NJX4402 GUNN DIODE 10 GHz gunn diode gunn diodes Diode jx4 NJX4404 X-Band Motion Detector Gunn Diode e band gunn diode oscillator gunn effect diode case PDF

    Untitled

    Abstract: No abstract text available
    Text: P ^p i GEC P L E S S E Y DS3486-1.2 DC1250/70/80 Series HIGH POWER MICROWAVE GUNN DIODES The D C 1250 S eries are gallium arsenide bulk effect d e vice s fo r the g e nera tion of C W m icrow ave po w e r in the range 4 G H z to 1 8 G H z d e pend ing on the cavity and diodes


    OCR Scan     		DS3486-1 DC1250/70/80 DC1280. 500mW 12GHz PDF

    JX400

    Abstract: l90c
    Text: 4 SE d NElil JAPAN RA DI O CO LTD • bSb'iftfia o o o i i a o Qb5 « n j r c MEDIUM POW ER GUNN DIODES p R C l — I , — i ii " P O I - M N J X400 2 4403 4404 ■ Description NJX4402, 4403, 4404 are medium power G unn diodes designed for in X -band cw oscillators. These G unn diodes util­


    OCR Scan     		NJX4402, JX4002/4 JX400 l90c PDF

    Untitled

    Abstract: No abstract text available
    Text: LORAL m C R O ü J A VE-FS I SIE D • S S aD 13 a O D D D 4 t ä 44b "T - 0-7 -1 1 HIGH POWER POSITIVE BIAS PLATED HEATSINK GUNN DIODES DESCRIPTION APPLICATIONS T he FSI S e m ico n d u cto r Plated H eatsin k d io d e chip consists o f a silver h eat sink chem ically b o n d e d t o th e b u lk se m ico n d u ctor


    OCR Scan     		55fl013D 006NO« PDF

    gunn diodes

    Abstract: VSA-9210 gunn diode varian x-band gunn diode n34 zener diagram of gunn diode Gunn diode x band gunn diode gunn diode x band radar yig oscillator 002
    Text: FEATURES • LOW FM AND AM NOISE • LOW VOLTAGE OPERATION • OPERATION TO 60 GHz • HIGH RELIA BILITY DESCRIPTION V a ria n G unn-effect diodes a re g a lliu m -arsen id e d ev ices fo r con verting low -voltage d -c pow er d ire c tly to m icrow ave frequency pow er. They


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    diode cross reference

    Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
    Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE


    OCR Scan     		MA40401 MA40402 MA40404 MA40405 MA40406 MA40408 diode cross reference schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606 PDF

    10 GHz gunn diode

    Abstract: backward diode "backward diode" CXY19 impatt diode x band gunn diode gunn effect Gunn Diode AEY17 Gunn Diode diode gunn SA
    Text: Microwave solid state backward diodes book 1 part 8 a> c Type No. Description _« 1 £ 3 O o*1 s Frequency Range GHz Typical Tangential Sensitivity Idbm) Min. Figure of Merit Typical Video Impedance (O) A E Y 17 Germanium bonded backward diode for use at X band


    OCR Scan     		AEY17 OD-42 AEY29 AEY29R" DO-37 AEY31 AEY31A AEY32 OD-50 CXY19 10 GHz gunn diode backward diode "backward diode" impatt diode x band gunn diode gunn effect Gunn Diode AEY17 Gunn Diode diode gunn SA PDF