Untitled
Abstract: No abstract text available
Text: GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 Unit: mm STROBE FLASH APPLICATIONS 3rd Generation High Input Impedance Low Saturation Voltage : VCE sat = 8 V (Max.) (IC = 130 A) Enhancement−Mode 4.5 V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT5G103
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Untitled
Abstract: No abstract text available
Text: GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit: mm z 3rd Generation A z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A) z Enhancement−Mode z 4.5 V Gate Drive
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GT5G103
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GT5G103
Abstract: bipolar power transistor data toshiba
Text: GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT5G103 Unit: mm STROBE FLASH APPLICATIONS 3rd Generation High Input Impedance Low Saturation Voltage : VCE sat = 8 V (Max.) (IC = 130 A) Enhancement−Mode 4.5 V Gate Drive MAXIMUM RATINGS (Ta = 25°C)
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GT5G103
GT5G103
bipolar power transistor data toshiba
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Untitled
Abstract: No abstract text available
Text: GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 Unit: mm STROBE FLASH APPLICATIONS ! 3rd Generation ! High Input Impedance ! Low Saturation Voltage : VCE sat = 8 V (Max.) (IC = 130 A) ! Enhancement−Mode ! 4.5 V Gate Drive
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GT5G103
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GT5G103
Abstract: No abstract text available
Text: GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 STROBE FLASH APPLICATIONS Unit: mm z 3rd Generation A z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8 V (Max.) (IC = 130 A) z Enhancement−Mode z 4.5 V Gate Drive
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GT5G103
GT5G103
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GT5G103
Abstract: No abstract text available
Text: GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5G103 Unit: mm STROBE FLASH APPLICATIONS l 3rd Generation l High Input Impedance l Low Saturation Voltage : VCE sat = 8 V (Max.) (IC = 130 A) l Enhancement−Mode l 4.5 V Gate Drive
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GT5G103
GT5G103
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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diode es1j via
Abstract: No abstract text available
Text: AT1454/AT1454A/AT1454B Preliminary Product Information Photoflash Capacitor Charger for DSC Feature ‧ 2.5V to 5.5V Supply Voltage Operating ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ Range. Low Current Consumption:1mA in operation. Adjustable Output Voltage.
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AT1454/AT1454A/AT1454B
AT1454
AT1454A/B
10-lead
350mm
350mm3
diode es1j via
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GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010F
GT30F124
GT30J124
GT30F123
gt30g124
GT45F122
*45F122
GT30F124 Equivalent
*30g122
gt30g122
gt30f122
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GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
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s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
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E0010A
BCE0010A
3503C-0109
s5j53
S5783F
GT30J322
S5783
Electronic IH rice cooker
GT50j101
MG30T1AL1
igbt induction cooker
MG60M1AL1
mosfet 500V 50A
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555 igbt driver
Abstract: st-532948br 2x250V 1N4007 1206 hv transformer driver AO3400 AO3400 MARKING flash trigger transformer 1N4007 GT5G103
Text: AT1455 Preliminary Product Information Photoflash Capacitor Charger for DSC Feature • 2.5V to 5.5V Supply Voltage Operating • • • • • • • • • Range. Low Current Consumption:1mA in operation. Adjustable Output Voltage. Adjustable Switch On-Time.
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AT1455
10-lead
AT1455
350mm3
350mm
555 igbt driver
st-532948br
2x250V
1N4007 1206
hv transformer driver
AO3400
AO3400 MARKING
flash trigger transformer
1N4007
GT5G103
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ka7745
Abstract: EI-1614 xenon light source circuit diagram igbt xenon tube IC-276 3V to 300V dc dc converter xenon lamp design SGR20N40L SCR TRIGGER PULSE TRANSFORMER xenon strobe lamp
Text: AN9006 IGBT Application Note For Camera Strobe Camera Strobe System Summary The Camera Strobe System Portable & DSC is a lighting system for taking pictures in relatively dark areas, without the accompanying negative effect on picture quality. The strobe system is
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AN9006
ka7745
EI-1614
xenon light source circuit diagram
igbt xenon tube
IC-276
3V to 300V dc dc converter
xenon lamp design
SGR20N40L
SCR TRIGGER PULSE TRANSFORMER
xenon strobe lamp
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GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010D
S-167
BCE0010E
GT45F122
gt30g122
gt30f122
gt45f123
GT45f122 Series
gt35j321
GT45G122
gt60n323
*45F122
GT45F124
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ka7745
Abstract: 3V to 300V dc dc converter xenon light source circuit diagram EI-1614 igbt xenon tube control light intensity using SCR AN9006 EI 33 transformer SCR TRIGGER PULSE TRANSFORMER SGR20N40L
Text: July, 2000 AN9006 IGBT Application Note For Camera Strobe Camera Strobe System Summary The Camera Strobe System Portable & DSC is a lighting system for taking pictures in relatively dark areas, without the accompanying negative effect on picture quality. The strobe system is
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AN9006
ka7745
3V to 300V dc dc converter
xenon light source circuit diagram
EI-1614
igbt xenon tube
control light intensity using SCR
AN9006
EI 33 transformer
SCR TRIGGER PULSE TRANSFORMER
SGR20N40L
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S6A35
Abstract: SF3G42 SF10JZ47 S6785G SF3J42 1R5GU41 S6A37 SCR S6A37 GT8G132 SM3GZ47
Text: [ 9 ] 応用回路例 [ 9 ] 応用回路例 1. スイッチング電源 1 自励式シングルフライバック方式 (RCC) 応用回路例 交 交流入力 二次整流 ダイオード 流 フィルタ + 直流出力 − 差動増幅 回 路 駆動用
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AC100
1JU42
AC200
05NU42
CMS04,
CMS05
5FWJ2CZ47M
5FWJ2C48M
10FWJ2CZ47M
10FWJ2C48M
S6A35
SF3G42
SF10JZ47
S6785G
SF3J42
1R5GU41
S6A37
SCR S6A37
GT8G132
SM3GZ47
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5G103
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 5 G 103 U nit in mm STROBE FLASH APPLICATIONS • • • • • 3rd Generation H igh Input Impedance Low Saturation Voltage ; V cE sat =8 V (M ax-) dC = 130A)
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GT5G103
5G103
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT5G103 T O SH IB A INSULATED GATE BIPO LAR T RA NSISTO R SILICON N C H A N N E L M O S TYPE G T 5 G 1 03 STROBE FLASH APPLICATIO NS • • • 3rd Generation High Input Impedance Low Saturation Voltage : VCE sat = 8V(Max.) (IC = 130 A) Enhancement-Mode
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GT5G103
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GT5G103
Abstract: vqe 23 vqe 23 c vqe 23 f VQE 24 VQE 23 E
Text: TOSHIBA GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL M O S TYPE G T 5 G 1 03 Unit in mm STROBE FLASH APPLICATIONS • • • 3rd Generation High Input Impedance Low Saturation Voltage : VcE sat = 8V(Max.) (IC = 130 A) • • Enhancement-Mode
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GT5G103
GT5G103
vqe 23
vqe 23 c
vqe 23 f
VQE 24
VQE 23 E
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT5G103 T O S H IB A IN S U L A T E D GATE BIPO LAR TR A N SISTO R SILICO N N C H A N N E L M O S TYPE f i T R f i l fl 3 Unit in mm STROBE FLASH A P P L IC A T IO N S 6 .8 M A X A 0.6 Low Saturation Voltage TT- . û T7 / H f . \ • v <J±LÎ (sat) - ° V U V l t U L .,
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GT5G103
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL M O S TYPE GT5G103 Unit in mm STROBE FLASH APPLICATIONS • • • 3rd Generation High Input Impedance Low Saturation Voltage • • Enhancement-Mode 4.5V Gate Drive : VCE sat = 8V(Max.) (IC= 130A>
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GT5G103
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GT5G103
Abstract: vqe 24 e
Text: TOSHIBA GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL M O S TYPE G T 5 G 1 03 Unit in mm STROBE FLASH APPLICATIONS • • • 3rd Generation High Input Impedance Low Saturation Voltage : VcE sat = 8V(Max.) (IC = 130 A) • • Enhancement-Mode
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GT5G103
GT5G103
vqe 24 e
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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200-V
400J101H
MG75J1BS11
MG25J1B511
MG50J1BS11
MG100J1BS11
MG150J1BS11
MG25Q1BS11
MG50Q1BS11
MG75Q1BS11
S5J53
MIG30J103H
200J2
S5J25
mg7502ys
MG150J1JS50
MIG100Q201H
GT60M301
MIG30J103HB
MP6753
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G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101
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GT10G101
GT10J301
GT10J311
GT10Q301
GT10Q
GT15G101
GT15J101
GT15J102
GT15J103
GT15Q101
G50Q2YS40
MG8Q6ES42
GT8Q102
mg300q1us41
GT60M301
MIG50J904H
gt15j103
MIG30J103H
MG25Q6ES50A
mg150q1js
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