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Hirose Electric Co Ltd GT25H2-8DP-2.2H CONN PIN HEADER PCB SMD R/A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT25H2-8DP-2.2H	Reel	800		200	1 - 10 - 100 - 1000 $0.86394 10000 $0.7875	Buy Now
	GT25H2-8DP-2.2H	Cut Tape	800		1	1 $1.6 10 $1.3 100 $1.6 1000 $1.6 10000 $1.6	Buy Now
Avnet Americas	GT25H2-8DP-2.2H	Reel		12 Weeks	200	1 - 10 - 100 - 1000 $1.19562 10000 $1.19562	Buy Now
Mouser Electronics	GT25H2-8DP-2.2H		534			1 $1.6 10 $1.3 100 $0.997 1000 $0.812 10000 $0.787	Buy Now
Newark	GT25H2-8DP-2.2H	Cut Tape	200		1	1 $1.73 10 $1.51 100 $1.21 1000 $0.93 10000 $0.864	Buy Now
TME	GT25H2-8DP-2.2H				200	1 - 10 - 100 - 1000 $0.85 10000 $0.82	Get Quote
Hirose Electric Co Ltd GT25H2-8DP-2.2H(10) CONN PIN HEADER PCB SMD R/A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT25H2-8DP-2.2H(10)	Cut Tape	208		1	1 $1.67 10 $1.357 100 $1.67 1000 $1.67 10000 $1.67	Buy Now
	GT25H2-8DP-2.2H(10)	Digi-Reel	208		1	1 $1.67 10 $1.357 100 $1.67 1000 $1.67 10000 $1.67	Buy Now
	GT25H2-8DP-2.2H(10)	Reel	200		200	1 - 10 - 100 - 1000 $0.90149 10000 $0.825	Buy Now
Newark	GT25H2-8DP-2.2H(10)	Cut Tape	200		1	1 $1.59 10 $1.39 100 $1.11 1000 $0.852 10000 $0.791	Buy Now
TME	GT25H2-8DP-2.2H(10)				200	1 - 10 - 100 - 1000 $0.81 10000 $0.81	Get Quote
Avnet Abacus	GT25H2-8DP-2.2H(10)			14 Weeks	200	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Hirose Electric Co Ltd GT25H2-32DP-2.2H CONN PIN HEADER PCB SMD R/A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT25H2-32DP-2.2H	Reel	200		200	1 - 10 - 100 - 1000 $1.62837 10000 $1.575	Buy Now
	GT25H2-32DP-2.2H	Cut Tape	200		1	1 $3.01 10 $2.45 100 $3.01 1000 $3.01 10000 $3.01	Buy Now
	GT25H2-32DP-2.2H	Digi-Reel	200		1	1 $3.11 10 $2.82 100 $3.11 1000 $3.11 10000 $3.11	Buy Now
Avnet Americas	GT25H2-32DP-2.2H	Reel		12 Weeks	200	1 - 10 - 100 - 1000 $2.23352 10000 $2.23352	Buy Now
Mouser Electronics	GT25H2-32DP-2.2H					1 $3.01 10 $2.45 100 $2 1000 $1.57 10000 $1.57	Get Quote
Avnet Abacus	GT25H2-32DP-2.2H			14 Weeks	200	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Hirose Electric Co Ltd GT25H2-24DP-2.2H(99) CONN PIN HEADER PCB SMD R/A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT25H2-24DP-2.2H(99)	Cut Tape	180		1	1 $2.52 10 $2.056 100 $2.52 1000 $2.52 10000 $2.52	Buy Now
	GT25H2-24DP-2.2H(99)	Digi-Reel	180		1	1 $2.52 10 $2.056 100 $2.52 1000 $2.52 10000 $2.52	Buy Now
Mouser Electronics	GT25H2-24DP-2.2H(99)		200			1 $2.52 10 $2.06 100 $1.68 1000 $1.3 10000 $1.29	Buy Now
Newark	GT25H2-24DP-2.2H(99)	Cut Tape	198		1	1 $2.84 10 $2.48 100 $1.99 1000 $1.53 10000 $1.42	Buy Now
Sager	GT25H2-24DP-2.2H(99)				200	1 - 10 - 100 - 1000 $1.69 10000 $1.48	Buy Now
Hirose Electric Co Ltd GT25H2-16DP-2.2H CONN PIN HEADER PCB SMD R/A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT25H2-16DP-2.2H	Digi-Reel	139		1	1 $2.24 10 $1.946 100 $2.24 1000 $2.24 10000 $2.24	Buy Now
	GT25H2-16DP-2.2H	Cut Tape	139		1	1 $2.03 10 $1.654 100 $2.03 1000 $2.03 10000 $2.03	Buy Now
Avnet Americas	GT25H2-16DP-2.2H	Reel		12 Weeks	200	1 - 10 - 100 - 1000 $1.4065 10000 $1.4065	Buy Now
Mouser Electronics	GT25H2-16DP-2.2H		447			1 $2.03 10 $1.66 100 $1.27 1000 $1.03 10000 $1.02	Buy Now

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GT25H Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
GT25H101		Toshiba	Discrete IGBTs		Original	PDF
GT25H101		Toshiba	TRANS IGBT CHIP N-CH 500V 25A 3(2-16C1C)		Scan	PDF

GT25H Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GT30J124 Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.	Original	BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123	PDF
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312	PDF
GT30F124 Abstract: GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122 Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 45F122 GT30F124 Equivalent 30g122 gt30g122 gt30f122	PDF
GT50J101 Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive	Original		PDF
s5j53 Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require	Original	E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A	PDF
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40	PDF
GT45F122 Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor	Original	BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124	PDF
mg75n2ys40 Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上げます。廃止品種 1 形名 02BZ2.2~4.7 代替品種	Original	02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A	PDF
mg75n2ys40 Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A	PDF
GT30F121 Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101 Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications	Original	BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101	PDF
GT30J124 Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125 Text: 製品カタログ 2010-3 東芝半導体製品カタログディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。	Original	BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125	PDF
GT25H101 Abstract: GT25H Opto Speed SA Text: TOSHIBA {DIS CR ETE/O PT O! 90D 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E_\| ciO,:17BSD D D l b l ñ ? TD SEMICONDUCTOR 16187 1 D T - 3 3 ' ^ 3 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT25H101 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.	OCR Scan	15BKAX GT25H101-3 GT25H101 GT25H Opto Speed SA	PDF
Untitled Abstract: No abstract text available Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25H101 HIGH PO W E R S W I T C H I N G A P P L I C A TI ON S. MO T O R C O N T ROL A P PL ICA TI ON S. Unit in ram I&9MAX 03.2ÌO.2 . High Input Impedance . High Speed : tf = 1, Ojus Max. . Low Saturation Voltage	OCR Scan	GT25H101	PDF
transistor B 1184 Abstract: GT25H101 Text: INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25H101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 15.9MAX 03.ZÌO.Z . High Input Impedance . High Speed : tf=l.Ofis Max. . Low Saturation Voltage : V q E ( s a t ) = 5 . 0V(Max.)	OCR Scan	GT25H101 2-16C1C transistor B 1184 GT25H101	PDF

MG100g2ys1 Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1 Text: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series	OCR Scan	EG50N2YS9* G15N2YSI MG25N2YS1 MG50N2YS1 G35Q2YSI MG25Q2YS1 MG50Q2YS1 MG25S2YS1 G25N1JS1 G50N1JS1 MG100g2ys1 mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1	PDF
GT25H101 Abstract: 1NSULAT 158KA OOLB Text: TOSHIBA {DISCRETE/OPTO} TO SH IBA D * T ' 3 3 ' I 3 . 90D 1 61 87 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T 2 5 H 1 0 1 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. HOTOR CONTROL APPLICATIONS.	OCR Scan	158KA] 2-16C1C GT25H101-3 GT25H101 1NSULAT 158KA OOLB	PDF

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GT25H Price and Stock

Hirose Electric Co Ltd GT25H2-8DP-2.2H

Hirose Electric Co Ltd GT25H2-8DP-2.2H(10)

Hirose Electric Co Ltd GT25H2-32DP-2.2H

Hirose Electric Co Ltd GT25H2-24DP-2.2H(99)

Hirose Electric Co Ltd GT25H2-16DP-2.2H

GT25H Datasheets (2)

GT25H Datasheets Context Search

GT30J124

STR-G6551

GT30F124

GT50J101

s5j53

TOSHIBA MG150N2YS40

GT45F122

mg75n2ys40

mg75n2ys40

GT30F121

GT30J124

GT25H101

Untitled

transistor B 1184

MG100g2ys1

GT25H101