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    GT100DA Search Results

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    GT100DA Price and Stock

    Vishay Semiconductors VS-GT100DA120UF

    IGBT MOD 1200V 187A 890W SOT227
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    DigiKey VS-GT100DA120UF Bulk 172 1
    • 1 $37.2
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    Vishay Semiconductors VS-GT100DA120U

    IGBT MOD 1200V 258A 893W SOT227
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    DigiKey VS-GT100DA120U Bulk 180
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    Microchip Technology Inc APTGT100DA60T1G

    IGBT MODULE 600V 150A 340W SP1
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    DigiKey APTGT100DA60T1G Bulk 21
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    Avnet Americas APTGT100DA60T1G Tube 27 Weeks 21
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    Mouser Electronics APTGT100DA60T1G
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    Newark APTGT100DA60T1G Bulk 15
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    Microchip Technology Inc APTGT100DA60T1G
    • 1 $50.41
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    NAC APTGT100DA60T1G Tube 7
    • 1 $48
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    Richardson RFPD APTGT100DA60T1G 21
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    Master Electronics APTGT100DA60T1G
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    Microchip Technology Inc APTGT100DA120T1G

    IGBT MODULE 1200V 140A 480W SP1
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    DigiKey APTGT100DA120T1G Bulk 17
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    Avnet Americas APTGT100DA120T1G Tube 27 Weeks 17
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    Mouser Electronics APTGT100DA120T1G
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    Newark APTGT100DA120T1G Bulk 12
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    Microchip Technology Inc APTGT100DA120T1G
    • 1 $64.89
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    NAC APTGT100DA120T1G Tube 5
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    Master Electronics APTGT100DA120T1G
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    Vishay Intertechnologies VS-GT100DA120UF

    Modules IGBT - SOT-227 IGBT (Alt: VS-GT100DA120UF)
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    Avnet Americas VS-GT100DA120UF 12 Weeks 160
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    Mouser Electronics VS-GT100DA120UF 388
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    Newark VS-GT100DA120UF Bulk 103 1
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    TTI VS-GT100DA120UF Tube 160
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    TME VS-GT100DA120UF 1
    • 1 $60.53
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    EBV Elektronik VS-GT100DA120UF 13 Weeks 10
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    GT100DA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original
    PDF GT100DA120U OT-227 E78996 2002/95/EC 18-Jul-08 GT100DA120U

    GT100DA60U

    Abstract: No abstract text available
    Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original
    PDF GT100DA60U OT-227 2002/95/EC 18-Jul-08 GT100DA60U

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original
    PDF GT100DA120U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA120U

    GT100DA120U

    Abstract: gt100da120 A5034 gt100 GT100DA
    Text: GT100DA120U Vishay High Power Products Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original
    PDF GT100DA120U OT-227 2002/95/EC 18-Jul-08 GT100DA120U gt100da120 A5034 gt100 GT100DA

    GT100DA60U

    Abstract: No abstract text available
    Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original
    PDF GT100DA60U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA60U

    GT100DA60U

    Abstract: No abstract text available
    Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original
    PDF GT100DA60U OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GT100DA60U

    vs-gt100da120u

    Abstract: No abstract text available
    Text: VS-GT100DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original
    PDF VS-GT100DA120U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 vs-gt100da120u

    Untitled

    Abstract: No abstract text available
    Text: VS-GT100DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology with positive temperature coefficient • Speed 4 kHz to 30 kHz • Square RBSOA • 3 s short circuit capability


    Original
    PDF VS-GT100DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    GT100DA60U

    Abstract: No abstract text available
    Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original
    PDF GT100DA60U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA60U

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original
    PDF GT100DA120U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA120U

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original
    PDF GT100DA120U OT-227 2002/95/EC 18-Jul-08 GT100DA120U

    gt100da60u

    Abstract: 184 324 DIODE V301000 gt100
    Text: GT100DA60U Vishay High Power Products Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original
    PDF GT100DA60U OT-227 2002/95/EC 18-Jul-08 gt100da60u 184 324 DIODE V301000 gt100

    GT100DA60U

    Abstract: No abstract text available
    Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse


    Original
    PDF GT100DA60U OT-227 E78996 2002/95/EC 18-Jul-08 GT100DA60U

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original
    PDF GT100DA120U OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GT100DA120U