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    Untitled

    Abstract: No abstract text available
    Text: N & P Pair Enhancement Mode MOSFET Product Description Features The GSM6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance


    Original     		PDF GSM6604 Lane11

    ifr 5300

    Abstract: 2965a IFR 640 M5200 GSM66 IFR 2966a
    Text: Systems and Service TPG Software Programming System Reduce program development and maintenance costs for GPIB/VXI, IFR M5200 and 5300 series testers. • Instrument drivers and macros • Reduced programming development costs • GPIB / VXI control software


    Original     		PDF M5200 ifr 5300 2965a IFR 640 GSM66 IFR 2966a