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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: N & P Pair Enhancement Mode MOSFET Product Description Features The GSM6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance	Original	PDF	GSM6604 Lane11

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: N & P Pair Enhancement Mode MOSFET Product Description Features The GSM6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

Original

PDF

GSM6604 Lane11