TAMP-960LN
Abstract: MICROWAVE tower specification sheet
Text: Application Note GSM-EDGE Performance vs. Output Power TAMP-960LN+ AN-60-044 GSM-EDGE Drop-In Low Noise Amplifier Module Mini-Circuits TAMP-960LN+ Ultra-low Noise Drop-In Amplifier Module is an ideal low noise amplifier for use in GSM-EDGE Base Station or Tower Mounted Low Noise Applications. The
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TAMP-960LN+
AN-60-044
AN-60-044
M125464
AN60044
TAMP-960LN
MICROWAVE tower specification sheet
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BGY284
Abstract: BGY502 bgy284e
Text: BGY284 GSM quad-band amplifier Ultra-small power amplifier module with integrated power control loop Measuring only 64 mm2, the BGY284 is an ultra-small, GSM power-amplifier module with an integrated power control loop. Designed for 850, 900, 1800 and 1900 MHz GSM phones,
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BGY284
BGY284,
BGY502
bgy284e
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GSM LNA
Abstract: IBM REV 2.8 gsm amplifier schematic schematic GSM ESD IBM REV 2.8 Circuit sheet IBM Microelectronics igc1 gsm amplifier circuit
Text: IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Features • 925-960 MHz operation for GSM applications • Low power, single 2.8 volt supply Applications • GSM portable transceivers Figure 1. IBM43RCLNA1115 Low Noise Amplifier
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IBM43RCLNA1115
IBM43RCLNA1115
lna1115
GSM LNA
IBM REV 2.8
gsm amplifier schematic
schematic GSM ESD
IBM REV 2.8 Circuit sheet
IBM Microelectronics
igc1
gsm amplifier circuit
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Jul 12 Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45%
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CGY2013G
PCA5075
SA1620.
SCA50
647021/1200/01/pp12
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smd diode HB
Abstract: BA891 CGY2014ATW HTSSOP20 philips application
Text: INTEGRATED CIRCUITS DATA SHEET CGY2014ATW GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Nov 28 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2014ATW FEATURES GENERAL DESCRIPTION
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CGY2014ATW
CGY2014ATW
403506/01/pp12
smd diode HB
BA891
HTSSOP20
philips application
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fca173
Abstract: BA891 Philips DC Power Amplifier 380 CGY2014TT HTSSOP20 Philips DATA Handbook system
Text: INTEGRATED CIRCUITS DATA SHEET CGY2014TT GSM/DCS/PCS power amplifier Preliminary specification File under Integrated Circuits, IC17 2000 Apr 11 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES GENERAL DESCRIPTION
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CGY2014TT
CGY2014TT
403506/01/pp16
fca173
BA891
Philips DC Power Amplifier 380
HTSSOP20
Philips DATA Handbook system
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PCF5078T
Abstract: PCF5078 VS218
Text: INTEGRATED CIRCUITS DATA SHEET PCF5078 Power amplifier controller for GSM and PCN systems Product specification File under Integrated Circuits, IC17 1999 Apr 12 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems
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PCF5078
PCF5073x
SCA63
465008/00/01/pp20
PCF5078T
PCF5078
VS218
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philips 561
Abstract: PCF5077T SSOP16 BGY2
Text: INTEGRATED CIRCUITS DATA SHEET PCF5077T Power amplifier controller for GSM and PCN systems Preliminary specification File under Integrated Circuits, IC17 1997 Nov 19 Philips Semiconductors Preliminary specification Power amplifier controller for GSM and PCN systems
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PCF5077T
SCA56
437027/1200/01/pp24
philips 561
PCF5077T
SSOP16
BGY2
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fca173
Abstract: h2lb FCA175 BA891 CGY2014TT philips rf manual HTSSOP20
Text: INTEGRATED CIRCUITS DATA SHEET CGY2014TT GSM/DCS/PCS power amplifier Product specification Supersedes data of 2000 Apr 11 File under Integrated Circuits, IC17 2000 Oct 16 Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES
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CGY2014TT
CGY2014TT
403506/02/pp16
fca173
h2lb
FCA175
BA891
philips rf manual
HTSSOP20
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Philips LQFP MARKING CODE
Abstract: Philips LQFP PART MARKING CODE Philips lqfp date CODE MARKING
Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G FEATURES
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CGY2013G
PCF5077
SA1620.
CGY2013GBE
OT313
Philips LQFP MARKING CODE
Philips LQFP PART MARKING CODE
Philips lqfp date CODE MARKING
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Untitled
Abstract: No abstract text available
Text: LMV242 LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller Literature Number: SNWS014B LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller General Description Features The LMV242 is a power amplifier PA controller intended for
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LMV242
LMV242
SNWS014B
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gsm transceiver
Abstract: PHILIPS databook MMIC BSR14 CGY2013G LQFP48 PHP212L SA1620 1210 pressure sensor ics
Text: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G FEATURES
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CGY2013G
CGY2013G
SCA50
437027/1200/02/pp12
gsm transceiver
PHILIPS databook MMIC
BSR14
LQFP48
PHP212L
SA1620
1210 pressure sensor ics
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2-bit comparator
Abstract: PCF5075 SSOP20 BAS70-07
Text: INTEGRATED CIRCUITS DATA SHEET PCF5075 Power amplifier controller for GSM and PCN systems Product specification Supersedes data of 1996 Feb 15 File under Integrated Circuits, IC17 1997 Feb 27 Philips Semiconductors Product specification Power amplifier controller for GSM and
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PCF5075
Dat31
SCA53
437027/1200/03/pp28
2-bit comparator
PCF5075
SSOP20
BAS70-07
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BGY280
Abstract: ldc15 HVSON10 PCF5079 PCF5079HK PCF5079T TSSOP10 Murata SFG LDC15H180J1747 1PS79SB62
Text: INTEGRATED CIRCUITS DATA SHEET PCF5079 Dual-band power amplifier controller for GSM, PCN and DCS Product specification File under Integrated Circuits, IC17 2001 Nov 21 Philips Semiconductors Product specification Dual-band power amplifier controller for GSM, PCN and DCS
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PCF5079
SCA73
403506/01/pp28
BGY280
ldc15
HVSON10
PCF5079
PCF5079HK
PCF5079T
TSSOP10
Murata SFG
LDC15H180J1747
1PS79SB62
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ax502
Abstract: GSM Transceiver chip AXIOM CHIP RF Power Innovations GSM Transceiver gsm 900 amplifier gsm module datasheet gsm module micro Power Amplifier Module for GSM low cost power amplifier
Text: AX502 GSM/GPRS Quad Band Power Amplifier PRODUCT DESCRIPTION The AX502 device integrates a full quad band GSM/GPRS power amplifier function on a single Integrated Circuit IC using advanced 0.13 µm CMOS process technology. Axiom’s patented technology is employed
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AX502
AX502
GSM/850
GSM Transceiver chip
AXIOM CHIP RF
Power Innovations
GSM Transceiver
gsm 900 amplifier
gsm module datasheet
gsm module micro
Power Amplifier Module for GSM
low cost power amplifier
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip
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CGY2010G
CGY2010G
MGB764
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gsm signal amplifier circuit diagram
Abstract: MGD629
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier
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PCA5075
SA1620.
CGY2013G
CGY2013G
MGD629
SMD0402;
SMD0603.
gsm signal amplifier circuit diagram
MGD629
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE - AWT0908 AWT0908 Power Amplifier for GSM Phones Introduction This application note describes the use of ANADIGICS AW T0908 Single Supply, GSM Band, Power Amplifier . The AW T0908 is specifically designed for GSM Cellular handset applications. The 28-pin SOIC package allows
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AWT0908
T0908
T0908
28-pin
theAWT0908
AWT0908
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CGY2013G
Abstract: LQFP48 PCA5075 SA1620 SMD0603
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.
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CGY2013G
PCA5075
SA1620.
CGY2013G
711032t
010b027
LQFP48
PCA5075
SA1620
SMD0603
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0908 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0908X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power
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AWT0908
AWT0908X
AWT0908
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The A W T0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply
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AWT0904
T0904
AWT0904
100nF
470pF
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0908 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier IC DESCRIPTION The AWT0908X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power
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AWT0908
AWT0908X
T0908
80MIL
330MIL
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HF power amplifier
Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
Text: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip
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CGY2010G
PCA5075
SA1620.
711062b
HF power amplifier
ze 003 ic
CGY2010G
LQFP48
LQFP64
LQFP80
PCA5075
SA1620
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply High Output Power
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AWT0904
AWT0904
100nF
470pF
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