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    GSC362 Datasheets Context Search

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    GSC362

    Abstract: soshin GSC362-HYB0900
    Text: SOSHIN ELECTRIC CO., LTD. Page 1 of 2 GSC362-HYB0900 800MHz Band 90Deg. Chip Hybrid Coupler Compact & High power capability. Application for RF power amplifier Base station Characteristics GSC362-HYB0900 Impedance 50 ohm Nominal Frequency Range 815-960MHz


    Original     		PDF GSC362-HYB0900 800MHz 90Deg. 815-960MHz 500pcs/Reel jp/cg900 GSC362-H. GSC362 soshin GSC362-HYB0900

    MD8IC970NR1

    Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		PDF MD8IC970N MD8IC970NR1 MD8IC970GNR1 GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT

    ATC100B470JT500XT

    Abstract: ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 mrf8p9210n ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P9210N MRF8P9210NR3 ATC100B470JT500XT ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT

    gsc3

    Abstract: GRM188R71C104K01D ATC600F4R7BT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 0, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		PDF MD8IC970N MD8IC970NR1 MD8IC970N gsc3 GRM188R71C104K01D ATC600F4R7BT250XT

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P9210N MRF8P9210NR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		PDF MD8IC970N MD8IC970N MD8IC970NR1 MD8IC970GNR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MD8IC925N Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage


    Original     		PDF MD8IC925N MD8IC925N MD8IC925NR1 MD8IC925GNR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage


    Original     		PDF MDE6IC9120N MDE6IC9120N/GN 32employees, MDE6IC9120NR1 MDE6IC9120GNR1

    SEMICONDUCTOR J601

    Abstract: Soshin GSC362 J295 A114 A115 AN1977 AN1987 C101 JESD22 MDE6IC9120GNR1
    Text: Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage


    Original     		PDF MDE6IC9120N MDE6IC9120N/GN MDE6IC9120NR1 MDE6IC9120GNR1 SEMICONDUCTOR J601 Soshin GSC362 J295 A114 A115 AN1977 AN1987 C101 JESD22 MDE6IC9120GNR1

    ATC600S470JT250XT

    Abstract: SG73P2AT GRM31MR71H105KA88L GRM188R71C104K01D RK73H2ATTD10R0F Soshin GSC362 J506 equivalent SG73P2ATTD Rogers RO4350B R8C35
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 1, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original     		PDF MD8IC970N MD8IC970N MD8IC970NR1 ATC600S470JT250XT SG73P2AT GRM31MR71H105KA88L GRM188R71C104K01D RK73H2ATTD10R0F Soshin GSC362 J506 equivalent SG73P2ATTD Rogers RO4350B R8C35