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    GS 669 Search Results

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    GS 669 Price and Stock

    Samtec Inc EW-05-12-G-S-669

    CONN HDR 5POS 0.1 STACK T/H GOLD
    Free Sample
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    DigiKey EW-05-12-G-S-669 Bulk 1
    • 1 $1.66
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    • 1000 $1.66
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    Avnet Americas EW-05-12-G-S-669 Bulk 1
    • 1 $1.21
    • 10 $1.21
    • 100 $0.76
    • 1000 $0.5
    • 10000 $0.5
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    Mouser Electronics EW-05-12-G-S-669
    • 1 $1.21
    • 10 $1.21
    • 100 $0.76
    • 1000 $0.5
    • 10000 $0.27
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    Newark EW-05-12-G-S-669 Bulk 1
    • 1 $1.14
    • 10 $0.992
    • 100 $0.855
    • 1000 $0.624
    • 10000 $0.517
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    Powell Electronics EW-05-12-G-S-669 553 1
    • 1 $1.21
    • 10 $1.21
    • 100 $0.76
    • 1000 $0.5
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    Master Electronics EW-05-12-G-S-669
    • 1 -
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    • 100 $0.9452
    • 1000 $0.5765
    • 10000 $0.4023
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    Sager EW-05-12-G-S-669 838 1
    • 1 $1.21
    • 10 $1.21
    • 100 $0.76
    • 1000 $0.5
    • 10000 $0.46
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    JRH Electronics EW-05-12-G-S-669

    CONN HDR 5POS 0.1 STACK T/H GOLD
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    DigiKey EW-05-12-G-S-669 Bulk 1
    • 1 $2.2
    • 10 $2.2
    • 100 $2.2
    • 1000 $0.90909
    • 10000 $0.90909
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    JRH Electronics DW-16-12-G-S-669

    CONN HDR 16POS 0.1 STACK T/H
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    DigiKey DW-16-12-G-S-669 Bulk 1
    • 1 $6.11
    • 10 $6.11
    • 100 $6.11
    • 1000 $2.89091
    • 10000 $2.89091
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    Samtec Inc DW-16-12-G-S-669

    CONN HDR 16POS 0.1 STACK T/H
    Free Sample
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    DigiKey DW-16-12-G-S-669 Bulk 1
    • 1 $4.71
    • 10 $4.71
    • 100 $4.71
    • 1000 $4.71
    • 10000 $4.71
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    Avnet Americas DW-16-12-G-S-669 Bulk 1
    • 1 $3.36
    • 10 $3.36
    • 100 $2.32
    • 1000 $1.59
    • 10000 $1.59
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    Mouser Electronics DW-16-12-G-S-669
    • 1 $3.36
    • 10 $3.36
    • 100 $2.32
    • 1000 $1.59
    • 10000 $0.8
    		Get Quote
    Newark DW-16-12-G-S-669 Bulk 1
    • 1 $3.11
    • 10 $2.97
    • 100 $2.49
    • 1000 $1.79
    • 10000 $1.61
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    Powell Electronics DW-16-12-G-S-669 176 1
    • 1 $3.36
    • 10 $3.36
    • 100 $2.32
    • 1000 $1.59
    • 10000 $1.59
    		Buy Now
    Master Electronics DW-16-12-G-S-669
    • 1 -
    • 10 $2.96
    • 100 $2.41
    • 1000 $1.63
    • 10000 $1.14
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    Sager DW-16-12-G-S-669 266 1
    • 1 $3.36
    • 10 $3.36
    • 100 $2.32
    • 1000 $1.59
    • 10000 $1.43
    		Buy Now

    JRH Electronics DW-12-12-G-S-669

    STACKING BOARD CONNECTOR, DW SER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DW-12-12-G-S-669 Bulk 1
    • 1 $4.58
    • 10 $4.58
    • 100 $4.58
    • 1000 $2.16364
    • 10000 $2.16364
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    Find more GS 669 price and stock on Findchips.com

    GS 669 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GR451

    Abstract: GP247 GP356 GP410 GP415 GP347 GP327 GP533 GP239 gm392
    Text: Types GE, GH, GM, GP, GR, GS, GT Disc Ceramics Capacitors General Purpose Capacitors Type G general purpose disc ceramic capacitors are an ideal choice for low cost, small size and low to high DC voltage, general purpose, coupling, by-pass and filtering applications.


    Original     		PDF

    EIA-364-09

    Abstract: EIA-364-21 EIA-364-28 EIA-364-31 EIA-364-32 EIA-364-10 EIA364-1000 EIA-364-65
    Text: TYPE NUMBER PRODUCT SPECIFICATION TITLE GS-12-301 PAGE REVISION 1 of 4 EXPRESSCARD HOST SYSTEM PRODUCT SPECIFICATION AUTHORIZED BY A DATE KENNY TAI 07/08/'04 CLASSIFICATION CONFIDENTIAL 1. OBJECTIVE This specification defines the performance, test, quality and reliability requirements of ExpressCard host


    Original     		PDF GS-12-301 T04-0426 E-3005 V20603 GS-01-001 EIA-364-09 EIA-364-21 EIA-364-28 EIA-364-31 EIA-364-32 EIA-364-10 EIA364-1000 EIA-364-65

    HAT2042T

    Abstract: Hitachi DSA00240
    Text: HAT2042T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-669F Z 7th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 8 D 1 D 4 G


    Original     		PDF HAT2042T ADE-208-669F HAT2042T Hitachi DSA00240

    Hitachi DSA002752

    Abstract: No abstract text available
    Text: HAT2042T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-669F Z 7th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 8 D 1 D 4 G


    Original     		PDF HAT2042T ADE-208-669F Hitachi DSA002752

    Hitachi DSA002731

    Abstract: No abstract text available
    Text: HAT2042T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-669F Z 7th. Edition Feb. 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 8 D 1 D 4 G 65 12


    Original     		PDF HAT2042T ADE-208-669F D-85622 Hitachi DSA002731

    08CNE8N

    Abstract: IPP08CNE8N JESD22 PG-TO220-3 D475A C3175
    Text: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CNE8N 08CNE8N JESD22 PG-TO220-3 D475A C3175

    Untitled

    Abstract: No abstract text available
    Text: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 8.2 m: ID 95 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 08CNE8N PG-TO262-3

    08CNE8N

    Abstract: No abstract text available
    Text: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 08CNE8N PG-TO262-3 08CNE8N

    IEC61249-2-21

    Abstract: IPP08CNE8N JESD22 PG-TO220-3 diode R 107
    Text: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 IEC61249-2-21 JESD22 PG-TO220-3 diode R 107

    08CNE8N

    Abstract: IPP08CNE8N JESD22 PG-TO220-3
    Text: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 08CNE8N 08CNE8N JESD22 PG-TO220-3

    PJ6694

    Abstract: SOIC-08
    Text: PJ6694 25V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@12A=12mΩ • RDS(ON), VGS@4.5V,IDS@10A=22mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters


    Original     		PDF PJ6694 SOIC-08 MIL-STD-750D PJ6694

    si8956

    Abstract: No abstract text available
    Text: T e m ic SÌ8956AZ/883 Siliconix Quad N-Channel Enhancement-Mode MOSFET Product Summary r DS on ( Q ) I d (A) 0.1 @ v GS = 10 V 5 0.2 @ V GS = 4.5 V 1 V d s CV) 20 LCC-20 Sj Si D2 D2 Gj D4 D4 G3 S3 S3 Top View Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF 8956AZ/883 LCC-20 P-36673--Rev. 36673--Rev. si8956

    Untitled

    Abstract: No abstract text available
    Text: _ rz7 3GE D • 7 ci2cJ237 0030140 2 SCS-THOMSON ^7# M »ilLiraM O gS s G s-Thomson SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION:


    OCR Scan     		PDF ci2cJ237 SGSP358

    ti082

    Abstract: No abstract text available
    Text: Æ T SCS TH O M SO N M ê^(&[i(gIF[MO(gS TL082 TL082A - TL082B GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIERS • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE (UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ OUTPUT SHORT-CIRCUIT PROTECTION


    OCR Scan     		PDF TL082 TL082A TL082B TL082, TL082B GS314S TL082 ti082

    RS1026

    Abstract: RS1064C SRS 4451 siemens datenbuch "WF Berlin" srs 360 RS1002A yl 1050 tetrode siemens rs 1007 RS1046 RS1072C
    Text: S IE M E N S Datenbuch 1980/81 gsgekühlt • for t • wassergekü ühlt * verdamp ühlt • siedekor nsgekühlt *stra i r e r i ü h " • K i • ssergeku ühlt * verdamp ühlt * sied ikon nsgekühlt *stra gs skühlt • for t * wassergekü :ühlt • verde p


    OCR Scan     		PDF

    15K05

    Abstract: C2390 Sharp Scan mute pin D41N4004 keyboard matrix 18*8
    Text: SHARP E L E K / M E L E C .O IV 1SE D I 0 Q0 13 GS Pulse Dialer C M O S LSI LR40994 T-75-Û 7-Û 7 LR40994 • Pulse Dialer CMOS LSI Description ■ Pin Connections The LR40994 is a monolithic CMOS LSI which uses a CR oscillator and provides the features re ­


    OCR Scan     		PDF LR40994 T-75-Ã 10/20pps 17-digit 1000ms 18-pin T-75-07-07 15K05 C2390 Sharp Scan mute pin D41N4004 keyboard matrix 18*8

    Mosfet FTR 03-E

    Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
    Text: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP


    OCR Scan     		PDF 2SK1976 2SK2095 2SK2176 O-220FP 2SA785 2SA790 2SA790M 2SA806 Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337

    SBR80

    Abstract: SBR8035 SBR8040 SBR8045 SBR8050
    Text: Schottky Rectifier SBR80 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode “ÎÔ41 A B C D E F G H J K M N P - .669 .422


    OCR Scan     		PDF SBR80 D0203AB SBR8035â SBR8040Â SBR8045 SBR8050 SBR8035 SBR8040 SBR8045 SBR8050

    Untitled

    Abstract: No abstract text available
    Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 R e p la ce s B U K 54 5-1 00 A /B PHILIPS N -channel en han cem en t m ode logic level field-effect power transistor in a plastic full-pack envelope. T h e device is intended for use in


    OCR Scan     		PDF BUK575-100A/B 7110fl2fci 004472T 711Gfl2b

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    transistor f630

    Abstract: f630 F630 TO 252 UF630
    Text: CEDF630/CEUF630 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 200V , 9 A , R d s o n =400 itiQ @Vgs=10V. • Super high dense cell design for extremely low Rds(onj. • High power and current handling capability. • TO-251 &TO-252 package.


    OCR Scan     		PDF CEDF630/CEUF630 400itiQ O-251 O-252 to-252m to-251 transistor f630 f630 F630 TO 252 UF630

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 93 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 93 Vds 600 V 3.6 A ffDS on 2.5 n Package Ordering Code TO-220 AB C67078-S1343-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit


    OCR Scan     		PDF O-220 C67078-S1343-A2 8235bD5 0235bQ5

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS1OVSJ-3 HIGH-SPEED SWITCHING USE FS1 OVSJ-3 I • 4V DRIVE • VDSS . 150V i • ros O N ( m a x ) . 160mn


    OCR Scan     		PDF 160mn 1CH23

    SD 347 transistor

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor BUZ 347 • N channel • Enhancement mode • Avalanche-rated Type BUZ 347 50V A ^DS on) Package 1) O rdering Code 45A 0.03 Q TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, Tc = 28 "C


    OCR Scan     		PDF O-218 C67078-S3115-A2 SD 347 transistor