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    GS 431 TRANSISTOR Search Results

    GS 431 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    GS 431 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MGF4919

    Abstract: mgf4918 mgf4914 MGF4910 gs 431 transistor
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series _ SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 9 1 0 E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to


    OCR Scan     		F4910E F4914E F4918E F4919E MGF4910E GF4914E GF4919E MGF4919 mgf4918 mgf4914 MGF4910 gs 431 transistor PDF

    marking sSH sot-23

    Abstract: MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens
    Text: SIEMENS BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 6 - 2 -6 v Pin 1 Pin 2 Pin 3 "g Type BSS 119 VDS 100 V Type BSS 119 O rdering Code Q67000-S007 0.17 A ^DS(on) Package Marking 6n SOT-23 sSH Tape and Reel Information


    OCR Scan     		OT-23 Q67000-S007 E6327 OT-23 GPS05557 marking sSH sot-23 MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens PDF

    Untitled

    Abstract: No abstract text available
    Text: mu t i CEP4060A/CEB4060A March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , RDS ON =85m Q @ V gs=10V. • Super high dense cell design for extremely low R ds (on). • High power and current handling capability. • TO-220 & TO-263 package.


    OCR Scan     		CEP4060A/CEB4060A O-22Q O-263 P4060A/C B4060A PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V b 8.5 A ^DS on Package Ordering Code 0.8 Í2 TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		O-220 C67078-S1342-A2 fi235b05 A23Sb05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type ^DS ¡0 11DS on BUZ 78 800 V 1.5 A 9.0 £2 Maxim um Ratings Parameter Continuous drain current, Tc = 25 'C Pulsed drain current, Tc = 25 °C Avalanche current, limited by Timax


    OCR Scan     		O-220 C67078-S1318-A2 PDF

    BUZ91

    Abstract: transistor buz91 C67078-S1342-A2 235bQ5 gs d050 transistor 91 330
    Text: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 Vds 600 V h ^DS on Package Ordering Code 8.5 A 0.8 £2 TO-220 AB C67078-S1342-A2 M axim um Ratings Parameter Symbol Continuous drain current


    OCR Scan     		O-220 C67078-S1342-A2 023SbD5 BUZ91 transistor buz91 C67078-S1342-A2 235bQ5 gs d050 transistor 91 330 PDF

    sd 431 transistor

    Abstract: transistor buz 210
    Text: SIEMENS BUZ 71 AL N o t fo r n e w rip a ig n SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type BUZ 71 AL Vbs 50 V 13 A flbs on 0.12 ß Package Ordering Code TO-220 AB C67078-S1326-A3 Maximum Ratings Parameter


    OCR Scan     		O-220 C67078-S1326-A3 GD-05155 sd 431 transistor transistor buz 210 PDF

    IRF 3302

    Abstract: 2sc 1894 IRFF430 IRFF431 IRFF432 IRFF433 irf 430
    Text: -Standard Power MOSFETs File Number IRFF430, IRFF431, IRFF432, IRFF433 1894 N-Channel Enhancement-Mode Power Field-Effect Transistors 2.25A and 2.75A, 450V - 500V rDsioni = 1.50 and 2.00 N-CHANNEL ENHANCEMENT MODE 3 D Features: • SOA is power-dissipation limited


    OCR Scan     		IRFF430, IRFF431, IRFF432, IRFF433 92CS-3374I IRFF432 IRFF433 IRF 3302 2sc 1894 IRFF430 IRFF431 irf 430 PDF

    h a 431 transistor

    Abstract: BUZ349 transistor buv y 431 transistor
    Text: ObE D N AMER P H I L I P S / D I S C R E T E PowerMOS transistor 1^ 53^31 0014745 t BUZ3491 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		b53i3i BUZ349 T0218AA; T-39-13 h a 431 transistor BUZ349 transistor buv y 431 transistor PDF

    SmD TRANSISTOR a77

    Abstract: smd marking code SSs
    Text: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138


    OCR Scan     		BSS138 OT-23 Q67000-S566 Q67000-S216 E6327 E6433 fopu22 S35bQ5 Q133777 SQT-89 SmD TRANSISTOR a77 smd marking code SSs PDF

    15n50

    Abstract: sth15n50f1 7n30
    Text: SCS-THOMSON STH15N50 STH15N50FI !ILJ gTO«§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH15N50 S TH 15N50FI ¡ V dss R ds(oh 500 V 500 V 0.4 Ü 0.4 £2 i Id | 15 A 9.3 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		STH15N50 STH15N50FI 15N50FI O-218 ISOWATT218 15N50 15N50FI 15Switching STH15N50/FI 15n50 sth15n50f1 7n30 PDF

    transistor w 431

    Abstract: tL 431 transistor BSN204 transistor tl 431 BSN204A
    Text: Philips Components BSN204/BSN204A Data «heat status Product specification date of issus December 1990 FEATURES N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.


    OCR Scan     		BSN204/BSN204A BSN204) BSN204A) transistor w 431 tL 431 transistor BSN204 transistor tl 431 BSN204A PDF

    IPW50R045CP

    Abstract: JESD22
    Text: IPW50R045CP CoolMOSTM Power Transistor Product Summary Features • Worldwide best R DS,on in TO247 • Lowest figure of merit RON x Qg V DS @Tjmax 550 V R DS on ,max 0.045 Ω 150 nC Q g,typ • Ultra low gate charge • Extreme dv/dt rated PG-TO247 • High peak current capability


    Original     		IPW50R045CP PG-TO247 IPP50R045CP 5R045P IPW50R045CP JESD22 PDF

    IPW60R045Cp 6R045

    Abstract: 6r045 mosfet 6r045 IPW60R045CP sd 431 transistor JESD22 SP000067149 gs 431 transistor
    Text: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R045CP PG-TO247-3-1 SP000067149 6R045 IPW60R045Cp 6R045 6r045 mosfet 6r045 IPW60R045CP sd 431 transistor JESD22 SP000067149 gs 431 transistor PDF

    infineon 6r045

    Abstract: mosfet 6r045 IPW60R045CS 6r045 infineon 6r045 PG-TO-247-3 Q67045A5061 JESD22 PG-TO247-3 IPW60R045
    Text: IPW60R045CS CoolMOS TM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R045CS PG-TO247-3 Q67045A5061 6R045 infineon 6r045 mosfet 6r045 IPW60R045CS 6r045 infineon 6r045 PG-TO-247-3 Q67045A5061 JESD22 PG-TO247-3 IPW60R045 PDF

    mosfet 6r045

    Abstract: IPW60R045Cp 6R045 230 AC to 5V dc smps sd 431 transistor infineon 6r045 IPW60R045CP SP000067149 6R045
    Text: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R045CP PG-TO247-3-1 PG-TO247-3-1 SP000067149 6R045 mosfet 6r045 IPW60R045Cp 6R045 230 AC to 5V dc smps sd 431 transistor infineon 6r045 IPW60R045CP SP000067149 6R045 PDF

    infineon 6r045

    Abstract: mosfet 6r045 6r045 infineon ipw60r045cp IPW60R045Cp 6R045
    Text: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R045CP PG-TO247-3-1 PG-TO247-3-1 SP000067149 6R045 infineon 6r045 mosfet 6r045 6r045 infineon ipw60r045cp IPW60R045Cp 6R045 PDF

    mosfet 6r045

    Abstract: infineon 6r045 transistor 6R045 6R045 marking PG-TO-247-3 gs 431 transistor 230 AC to 5V dc smps IPW60R045Cp 6R045
    Text: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R045CP PG-TO247-3-1 PG-TO247-3-1 SP000067149 6R045 mosfet 6r045 infineon 6r045 transistor 6R045 6R045 marking PG-TO-247-3 gs 431 transistor 230 AC to 5V dc smps IPW60R045Cp 6R045 PDF

    IPW60R045Cp 6R045

    Abstract: mosfet 6r045 6R045 IPW60R045CP JESD22 SP000067149 sd 431 transistor gs 431 transistor infineon 6r045
    Text: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R045CP PG-TO247-3-1 SP000067149 6R045 IPW60R045Cp 6R045 mosfet 6r045 6R045 IPW60R045CP JESD22 SP000067149 sd 431 transistor gs 431 transistor infineon 6r045 PDF

    mosfet 6r045

    Abstract: IPW60R045Cp 6R045 6r045 IPW60R045CP sd 431 transistor transistor 6R045 gs 431 transistor SP000067149 infineon 6r045 CoolMOS Power Transistor
    Text: IPW60R045CP CoolMOS Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R045CP PG-TO247-3-1 SP000067149 6R045 mosfet 6r045 IPW60R045Cp 6R045 6r045 IPW60R045CP sd 431 transistor transistor 6R045 gs 431 transistor SP000067149 infineon 6r045 CoolMOS Power Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement Mode MOSFET Product Description Features The GSM1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior


    Original     		GSM1012 Lane11 PDF

    XC+872

    Abstract: No abstract text available
    Text: SPD 10N10 Inf i ne on technologies Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS 100 V • Enhancement mode Drain-Source on-state resistance ñ DS on1 0.2 Q. • Avalanche rated Continuous drain current


    OCR Scan     		10N10 11-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T XC+872 PDF

    Untitled

    Abstract: No abstract text available
    Text: P-Channel Enhancement Mode MOSFET Product Description Features The GSM1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior


    Original     		GSM1013 -20V/0 Lane11 PDF

    SGS150MA010D1

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON ^7# RilD g»[l[Lll(gT»R(10(gi SGS150MA010D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V DSs SGS150MA010D1 100 V • • • • • RDS(on 0.009 n 150 A ISOLATED POWERMOS MODULE HIGH POWER FAST SWITCHING EASY DRIVE


    OCR Scan     		SGS150MA010D1 SGS150MA010D1 PDF