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Abstract: No abstract text available
Text: GRM32ER61H106KA12# # indicates a package specification code. < List of part numbers with package codes > GRM32ER61H106KA12L , GRM32ER61H106KA12K , GRM32ER61H106KA12B Shape References Packaging Specifications Minimum quantity L Embossed tape φ180mm 1000
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GRM32ER61H106KA12#
GRM32ER61H106KA12L
GRM32ER61H106KA12K
GRM32ER61H106KA12B
180mm)
330mm)
110mg
50Vdc
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Untitled
Abstract: No abstract text available
Text: GRM32ER61H106KA12# # indicates a package specification code. < List of part numbers with package codes > GRM32ER61H106KA12L , GRM32ER61H106KA12K , GRM32ER61H106KA12B Shape References Packaging Specifications Minimum quantity L Embossed tape φ180mm 1000
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GRM32ER61H106KA12#
GRM32ER61H106KA12L
GRM32ER61H106KA12K
GRM32ER61H106KA12B
180mm)
330mm)
110mg
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Untitled
Abstract: No abstract text available
Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous
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AFT26P100â
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Text: DEMO MANUAL DC2010A LT8612 42V, 6A Micropower Synchronous Step-Down Regulator Description Demonstration circuit 2010A is a 42V, 6A micropower synchronous step-down regulator featuring the LT 8612. The demo board is designed for 5V output from a 5.8V to 42V input. The wide input range allows a variety of
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DC2010A
LT8612
LT8612
40ion
dc2010af
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MRF8P20140WH/HS
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20140WH
MRF8P20140WHR3
MRF8P20140WHSR3
MRF8P20140WH/HS
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
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AFT27S006N
AFT27S006NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20140WH
MRF8P20140WHR3
MRF8P20140WHSR3
MRF8P20140WGHSR3
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Untitled
Abstract: No abstract text available
Text: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous
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AFT26P100â
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Text: XRP7613 1.2A 36V Step-Down High brightness LED Driver November 2012 Rev. 1.0.0 GENERAL DESCRIPTION EVALUATION BOARD MANUAL The Exar XRP7613 Evaluation board EVB is a fully assembled and tested surface-mount PCB that demonstrates the XRP7613 LED driver. The XRP7613 is a non-synchronous step-down
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XRP7613
XRP7613
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT21S220W02S Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability
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AFT21S220W02S
AFT21S220W02SR3
AFT21S220W02GSR3
2/2014Semiconductor,
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Text: Freescale Semiconductor Technical Data Document Number: AFT21S140W02S Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability
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AFT21S140W02S
AFT21S140W02SR3
AFT21S140W02GSR3
2/2014Semiconductor,
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MRF8P20140WHS
Abstract: mrf8p20140 J473 MRF8P20140W
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20140WH
MRF8P20140WHR3
MRF8P20140WHSR3
MRF8P20140WHS
mrf8p20140
J473
MRF8P20140W
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j350 TRANSISTOR
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHT1006N Rev. 0, 5/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.
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MHT1006N
MHT1006NT1
j350 TRANSISTOR
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GRM21BR61E106KA73L
Abstract: GRM21BR61E226M GRM32ER7YA106KA12L GRM, MURATA GRM32ER61C476KE15L GRM32ER71H106 GRM188R61E106MA73L GRM31CR61E226KE15L GRM319R61A226ME15D GRM188C80E106ME47D
Text: CHIP MONOLITHIC CERAMIC CAPACITOR GRM series / Hi-Cap 1uF and over Features 1. TA chip capacitor replacement product lineup is available in X7R (X7S, X7T, X7U), X6S(X6T) and X5R temperature characteristics with a capacitance of 1uF and larger. 2. The line of high volumetric capacitance ceramic chip capacitors is available in 2.5V,4V, 6.3V, 10V, 16V,
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-10Operating
FM7500U-092-Oct
FM7500U-092-Sep
Hi-Cap2010
GRM21BR61E106KA73L
GRM21BR61E226M
GRM32ER7YA106KA12L
GRM, MURATA
GRM32ER61C476KE15L
GRM32ER71H106
GRM188R61E106MA73L
GRM31CR61E226KE15L
GRM319R61A226ME15D
GRM188C80E106ME47D
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Untitled
Abstract: No abstract text available
Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
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AFT27S006N
AFT27S006NT1
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Untitled
Abstract: No abstract text available
Text: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
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AFT27S006N
AFT27S006NT1
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
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AFT27S010N
AFT27S010NT1
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