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    P-TSOPII-54

    Abstract: caz smd PC133 registered reference design
    Text: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10


    Original     		PDF 39S64400/800/160ET 64-MBit P-TSOPII-54 caz smd PC133 registered reference design

    SMD MARKING T20

    Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
    Text: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge


    Original     		PDF 39S64400/800CT 64-MBit SPT03933 SMD MARKING T20 smd marking T22 MARKING A3 SMD MARKING CODE a09

    P-TSOPII-54

    Abstract: PC133 registered reference design
    Text: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • High Performance: • Multiple Burst Read with Single Write Operation -7 -7.5 -8 Units fCK 143 133 125 MHz • Automatic and Controlled Precharge Command tCK3 7 7.5 8 ns • Data Mask for Read/Write Control (x4, x8)


    Original     		PDF 39S128400/800/160CT 128-MBit P-TSOPII-54 PC133 registered reference design

    marking code EY SMD

    Abstract: PC100-222-620 P-TSOPII-54
    Text: HYB39L256160AC/T 256MBit 3.3V Mobile-RAM 256 MBit Synchronous Low-Power DRAM Data Sheet Revision Dec. 2002 • Automatic and Controlled Precharge Command Features -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page tCK3,MIN


    Original     		PDF HYB39L256160AC/T 256MBit 16Mbit P-TFBGA-54, PC133 SPT03919-3 marking code EY SMD PC100-222-620 P-TSOPII-54

    39S256160DT-7

    Abstract: HYB39S256400D PC133-222-520 PC166
    Text: Data Sheet, Rev. 1.02, Feb. 2004 HYB39S256400D[C/T] L HYB39S256800D[C/T](L) HYB39S256160D[C/T](L) 256-MBit Synchronous DRAM SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB39S256400D HYB39S256800D HYB39S256160D 256-MBit P-TSOPII-54 GPX09039 10072003-13LE-FGQQ HYB39S256 TFBGA-54 39S256160DT-7 PC133-222-520 PC166

    smd marking T22

    Abstract: smd transistor marking ba 128M-BIT P-TSOPII-54 P-TSOP-54 PC133 registered reference design 128-MBIT
    Text: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: -7 -7.5 -8 Units • Automatic and Controlled Precharge Command fCK 143 133 125 MHz • Data Mask for Read/Write Control (x4, x8)


    Original     		PDF 39S128400/800/160CT 128-MBit smd marking T22 smd transistor marking ba 128M-BIT P-TSOPII-54 P-TSOP-54 PC133 registered reference design

    P-TSOPII-54

    Abstract: 39S64160BT-7 39S64160AT-5
    Text: HYB39S64160A/BT-5.5/-6/-7 64MBit Synchronous DRAM 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications • High Performance: • full page optional for sequencial wrap around • Multiple Burst Read with Single Write Operation • Automatic


    Original     		PDF HYB39S64160A/BT-5 64MBit P-TSOPII-54 GPX09039 P-TSOPII-54 39S64160BT-7 39S64160AT-5

    PC100-322-620

    Abstract: PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Datasheet • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125


    Original     		PDF 39S256400/800/160AT 256-MBit SPT03933 PC100-322-620 PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15

    PC133-333

    Abstract: P-TSOPII-54 hyb39s64400
    Text: HYB39S64400/800/160A/BT L 64MBit Synchronous DRAM Ultra High Speed 64 MBit Synchronous DRAM PC143 & PC133 • High Performance: -7 -7.5 Units fCKmax. 143 133 MHz tCK3 7 7.5 ns tAC3 5.4 5.4 ns tCK2 10 10 ns tAC2 5.5 6 ns • Fully Synchronous to Positive Clock Edge


    Original     		PDF HYB39S64400/800/160A/BT 64MBit PC143 PC133 P-TSOPII-54 400mil PC143 PC133 PC133-333 hyb39s64400

    39S256160T

    Abstract: PC100-322-620 smd CAY PC100-322 P-TSOPII-54
    Text: HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -8A -8B Units fCK 125 125 100 MHz tCK3 8 8 10 ns tAC3 6 6 6 ns tCK2 10 12 15 ns tAC2 6 6 7 ns • Fully Synchronous to Positive Clock Edge


    Original     		PDF HYB39S256400/800/160T 256MBit P-TSOPII-54 400mil PC100 3-2T10 HYB39S256400/800/160AT 39S256160T PC100-322-620 smd CAY PC100-322

    cbx smd code

    Abstract: SMD marking code ax2 PC100-222 PC133-333 P-TSOPII-54 smd marking T22
    Text: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge


    Original     		PDF 39S64400/800CT 64-MBit BanT14 SPT03933 HYB39S64400/800/160CT 64MBit cbx smd code SMD marking code ax2 PC100-222 PC133-333 P-TSOPII-54 smd marking T22

    ISO 2768-mk

    Abstract: PC100-222-620 HYB 39L128160AC-7.5
    Text: HYB 39L128160AC/T 128-MBit 3.3V Mobile-RAM 128-MBit Synchronous Low-Power DRAM Datasheet Rev. 12/01 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page


    Original     		PDF 39L128160AC/T 128-MBit 54-FBGA SPT03933 ISO 2768-mk PC100-222-620 HYB 39L128160AC-7.5

    P-TSOPII-54

    Abstract: PC133 registered reference design
    Text: HYB39S512400/800/160AT L 512MBit Synchronous DRAM 512 MBit Synchronous DRAM Preliminary Datasheet April ’01 • High Performance: -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz tCK3 6 7 7.5 8 ns tAC3 5 5.4 5.4 6 ns tCK2 7.5 7.5 10 10 ns tAC2 5.4 5.4 6 6 ns


    Original     		PDF HYB39S512400/800/160AT 512MBit P-TSOPII-54 400mil PC166 PC133 PC133 registered reference design

    39S256160DT-7

    Abstract: HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOPII-54 P-TSOP-54-2
    Text: HYB39S256400/800/160DT L /DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 -7 -7.5 -8 Units • Data Mask for Read / Write control (x4, x8) • Data Mask for byte control (x16) • Auto Refresh (CBR) and Self Refresh fCK 166


    Original     		PDF HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil P-TSOPII-54 GPX09039 TFBGA-54 39S256160DT-7 HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOP-54-2

    PC100-322-620

    Abstract: 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03933 PC100-322-620 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620

    PC133 registered reference design

    Abstract: No abstract text available
    Text: HYB39S256400/800/160DT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Datasheet (Rev. 7/01) • High Performance: -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz tCK3 6 7 7.5 8 ns tAC3 5 5.4 5.4 6 ns tCK2 7.5 7.5 10 10 ns tAC2 5.4 5.4 6 6 ns


    Original     		PDF HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil PC166 PC133 PC133 registered reference design

    smd marking code bs

    Abstract: TSOP RECEIVER 39S64160BT-8 MARKING AX5 sdram 4 bank 4096 16 smd code marking t6 P-TSOPII-54
    Text: HYB39S64400/800/160BT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: 7.5 -8 -10 Units fCKmax. 133 125 100 MHz tCK3 7.5 8 10 ns tAC3 5.4 6 7 ns tCK2 10 10 15 ns tAC2 6 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S64400/800/160BT 64MBit P-TSOPII-54 400mil PC133 PC100 smd marking code bs TSOP RECEIVER 39S64160BT-8 MARKING AX5 sdram 4 bank 4096 16 smd code marking t6

    P-TSOPII-54

    Abstract: Q67100-Q1838 Q67100-Q2781
    Text: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns


    Original     		PDF 39S64400/800/160BT 64-MBit SPT03933 P-TSOPII-54 Q67100-Q1838 Q67100-Q2781

    P-TSOPII-54

    Abstract: No abstract text available
    Text: HYB 39S128400/800/160DT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM Preliminary Target Specification 10.01 High Performance: • Multiple Burst Read with Single Write Operation -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz • Automatic and Controlled Precharge


    Original     		PDF 39S128400/800/160DT 128-MBit HYB39S128400/800/160DT P-TSOPII-54

    tube az1

    Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
    Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10


    Original     		PDF 39S256400/800/160T 256-MBit SPT03933 tube az1 smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15

    HYB39S64160ET

    Abstract: P-TSOPII-54
    Text: HYB39S64160ET-5/-5.5/-6 64MBit Synchronous DRAM 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications Preliminary Datasheet • High Performance: • Automatic Command and Controlled Precharge • Data Mask for Read / Write control -5 -5.5 -6


    Original     		PDF HYB39S64160ET-5/-5 64MBit HYB39S64160ET P-TSOPII-54

    PC100-222-620

    Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8


    Original     		PDF 39S256400/800/160AT 256-MBit SPT03933 PC100-222-620 PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3

    SMD MARKING CODE aO9

    Abstract: No abstract text available
    Text: H YB39S64400/800/160BT L 64MBit Synchronous DRAM îlfîîl0Oil 64 M Bit S ynch ro n o u s DRAM • High Perform ance: M ultiple Burst Operation 7.5 -8 -10 Units fCKmax. 133 125 100 M Hz tC K 3 7.5 8 10 ns tA C 3 5.4 6 7 ns tC K 2 10 10 15 ns tA C 2 6 6 8


    OCR Scan     		PDF HYB39S64400/800/160BT 64MBit SMD MARKING CODE aO9

    Untitled

    Abstract: No abstract text available
    Text: # H YB39S256400/800/160T 256MBit Synchronous DRAM In fin eon 256 MBit Synchronous DRAM Preliminary Information • High Performance: Multiple Burst Operation -8 -8A -8B Units fC K 125 125 100 M Hz tC K 3 8 8 10 ns tA C 3 6 6 6 ns tC K 2 10 12 15 ns tA C 2


    OCR Scan     		PDF YB39S256400/800/160T 256MBit