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    GPS CHIP 203 Search Results

    GPS CHIP 203 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    GPS CHIP 203 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Wound Chip Inductors EPIMSC Type ELECTRONICS INC. Applications : RF Products for Cellular Phone, GPS Receiver, Base Station, Repeater, Wireless LAN/Mouse/Keyboard/Earphone, Remote Control, Security System and other RF Modules Specifications : Operating/Storage Temperature : -40°C to +125°C


    Original     		PDF 3000/Reel EPIMSC0402C EPIMSC0603C EPIMSC0805C EPIMSC1008C

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    gps tracker circuit diagram

    Abstract: GPS BUILDER SC-104 specification version 2.1 crystal 3.5mHZ RTCM SC-104 message type 1 specification version 2.1 MOTOROLA INSTANT GPS DESIGN GUIDE motion sensor doppler gps builder Designers Guide GPS ARCHITECT SAW GPS GLONASS filter
    Text: GP2000 GPS Chipset – Designer’s Guide Supersedes Issue 1.4 in August 1996 Global Positioning Products Handbook, HB3045-1.0 The GP2000 chipset comprises the GP2015 RF front end and the GP2021 12-channel correlator. Together with a microprocessor and a SAW filter both available from Mitel


    Original     		PDF GP2000 HB3045-1 GP2000 GP2015 GP2021 12-channel gps tracker circuit diagram GPS BUILDER SC-104 specification version 2.1 crystal 3.5mHZ RTCM SC-104 message type 1 specification version 2.1 MOTOROLA INSTANT GPS DESIGN GUIDE motion sensor doppler gps builder Designers Guide GPS ARCHITECT SAW GPS GLONASS filter

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		PDF AFT27S006N AFT27S006NT1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW6IC2015N Rev. 3, 12/2008 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


    Original     		PDF MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 MW6IC2015N MW6IC2015NBR1

    IC 2030 schematic diagram

    Abstract: 1800 ldmos class g power amplifier schematic TD-SCDMA A114 A115 AN1977 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


    Original     		PDF MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 MW6IC2015N MW6IC2015NBR1 IC 2030 schematic diagram 1800 ldmos class g power amplifier schematic TD-SCDMA A114 A115 AN1977 AN1987 C101 JESD22

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1 3224w AN3263
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 2, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


    Original     		PDF MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 3224w AN3263

    GPS Builder

    Abstract: rtcm SC-104 specification version 2.1 message type 2 gps tracker circuit diagram GP2015 sharp "gps builder" Qk21 GPS Architect MOTOROLA INSTANT GPS DESIGN GUIDE txo4010 gp2000
    Text: GP2000 GPS Chipset – Designer’s Guide Supersedes Issue 1.4 in August 1996 Global Positioning Products Handbook, HB3045-1.0 The GP2000 chipset comprises the GP2015 RF front end and the GP2021 12-channel correlator. Together with a microprocessor and a SAW filter both available from Mitel


    Original     		PDF GP2000 HB3045-1 MS4395-2 GP2000 GP2015 GP2021 12-channel GPS Builder rtcm SC-104 specification version 2.1 message type 2 gps tracker circuit diagram GP2015 sharp "gps builder" Qk21 GPS Architect MOTOROLA INSTANT GPS DESIGN GUIDE txo4010

    CW12010T0050GBK

    Abstract: CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550
    Text: Document Number: MRF8P20160H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20160H MRF8P20160HSR3 CW12010T0050GBK CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550

    TOKO marking Guide

    Abstract: marking parade
    Text: Dielectric Filters TDF Description CONTENTS Chip Dielectric Filters Dimensions . 2 Height by Type . 2 Soldering Profile . 2 Frequency Guide . 3 TDF . 4 TDFM . 6


    Original     		PDF D-71254 F-75015 TOKO marking Guide marking parade

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		PDF AFT27S010N AFT27S010NT1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		PDF AFT27S010N AFT27S010NT1

    CW12010T0050GBK

    Abstract: J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to


    Original     		PDF MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3 CW12010T0050GBK J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA

    SiRFstarIIt

    Abstract: GSC2x SiRFXTrac leadtek lr9805 LR9805ST lr9805 LR9805-ST gps modem block diagram sirf 1v leadtek gps
    Text: LR9805ST LR9805-ST GPS Module Copyright 2006 Leadtek Research Inc. All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, recording or otherwise,


    Original     		PDF LR9805ST LR9805-ST SiRFstarIIt GSC2x SiRFXTrac leadtek lr9805 LR9805ST lr9805 LR9805-ST gps modem block diagram sirf 1v leadtek gps

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S21140H Rev. 0, 5/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S21140HR3 MRF8S21140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21140H MRF8S21140HR3 MRF8S21140HSR3 MRF8S21140HR3

    mrf8s21140hs

    Abstract: MRF8S21140H MRF8S21140HSR3 MRF8S21140 MRF8S21140HSR AN1955 JESD22-A114 GRM43ER61H475MA88L MRF8S21140HR3 j491
    Text: Document Number: MRF8S21140H Rev. 0, 5/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S21140HR3 MRF8S21140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21140H MRF8S21140HR3 MRF8S21140HSR3 MRF8S21140HR3 mrf8s21140hs MRF8S21140H MRF8S21140HSR3 MRF8S21140 MRF8S21140HSR AN1955 JESD22-A114 GRM43ER61H475MA88L j491

    J5001

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 4, 12/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N J5001

    J5001

    Abstract: ipc 9850 A113 A114 A115 AN1955 C101 JESD22 MW6IC2240GNBR1 MW6IC2240N
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 5, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 J5001 ipc 9850 A113 A114 A115 AN1955 C101 JESD22 MW6IC2240GNBR1

    R435 RF receiver MODULE CIRCUIT DIAGRAM

    Abstract: RFS 1003 200BR EI14 600 pq11 RX 1013 40MHZ ADSP-2188 EI14 PI13 ADSST-200
    Text: GPS Accelerator ADSST-200 FEATURES GENERAL DESCRIPTION 12 parallel tracking channels 1920 parallel correlators for rapid acquisition and reacquisition Easy interface with ADSST-GPSRF01 GPS RF receiver and ADSP processors through serial port Low power consumption


    Original     		PDF ADSST-200 ADSST-GPSRF01 ADSST-200 MO-153-AE 28-Lead RU-28) ADSST-200BRUZ ADSST-200BRUZ-RL71 R435 RF receiver MODULE CIRCUIT DIAGRAM RFS 1003 200BR EI14 600 pq11 RX 1013 40MHZ ADSP-2188 EI14 PI13

    T491C105K0

    Abstract: mcr63v470m8x11 MRF6S19120H
    Text: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 T491C105K0 mcr63v470m8x11

    J5001

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 3, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 MW6IC2240N J5001

    LM 4863 D

    Abstract: No abstract text available
    Text: G E C P L E S S E Y PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS3839-4.2 MA28140 PACKET TELECOMMAND DECODER The MA28140 Packet Telecommand Decoder PTD is a single-chip implementation of the core part of a telecommand decoder, m anufactured using GPS CMOS-SOS high


    OCR Scan     		PDF DS3839-4 MA28140 MA28140 PSS-04-107 PSS-04-151, 0D2415Ã LM 4863 D

    MUX2T01

    Abstract: MUX4T01
    Text: •JUL J Ü 9 S3- GEC PLES S EY J U N E 1993 S E M I C O N D U C T O R S DS3820 - 1.0 CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The new CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density


    OCR Scan     		PDF DS3820 CLA80000 CLA80k MUX2T01 MUX4T01