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    CRCW12068R25FKEA Price and Stock

    Vishay Dale CRCW12068R25FKEA

    RES SMD 8.25 OHM 1% 1/4W 1206
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    CRCW12068R25FKEA Digi-Reel 1
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    Vishay Dale CRCW12068R25FKEAC

    RES 8.25 OHM 1% 1/4W 1206
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    Vishay Dale CRCW12068R25FKEAHP

    RES SMD 8.25 OHM 1% 3/4W 1206
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    Vishay Intertechnologies CRCW12068R25FKEA

    D25/CRCW1206 100 8R25 1% ET1 e3 - Tape and Reel (Alt: CRCW12068R25FKEA)
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    Vishay Intertechnologies CRCW12068R25FKEAC

    CRCW Thick Film Commodity Chip Resistor 1206 Size 8.25 Ohm 1% 0.25 W 100 ppm/K 2-Pin SMD Paper T/R - Tape and Reel (Alt: CRCW12068R25FKEAC)
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    CRCW12068R25FKEA Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CRCW12068R25FKEA Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 8.25 OHM 1% 1/4W 1206 Original PDF
    CRCW12068R25FKEAC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES 8.25 OHM 1% 1/4W 1206 Original PDF
    CRCW12068R25FKEAHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 8.25 OHM 1% 3/4W 1206 Original PDF

    CRCW12068R25FKEA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20161HS MRF8P20161HSR3

    mosfet J442

    Abstract: ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20161HS MRF8P20161HSR3 mosfet J442 ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596

    CW12010T0050GBK

    Abstract: J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to


    Original     		PDF MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3 CW12010T0050GBK J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to


    Original     		PDF MRF8P2160H MRF8P20160HR3 MRF8P20160HSR3 MRF8P20160HR3

    CW12010T0050GBK

    Abstract: CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550
    Text: Document Number: MRF8P20160H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20160H MRF8P20160HSR3 CW12010T0050GBK CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550